KR102158779B1 - 반도체 처리 챔버에 과산화수소를 전달하는 방법 및 시스템 - Google Patents

반도체 처리 챔버에 과산화수소를 전달하는 방법 및 시스템 Download PDF

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KR102158779B1
KR102158779B1 KR1020150042555A KR20150042555A KR102158779B1 KR 102158779 B1 KR102158779 B1 KR 102158779B1 KR 1020150042555 A KR1020150042555 A KR 1020150042555A KR 20150042555 A KR20150042555 A KR 20150042555A KR 102158779 B1 KR102158779 B1 KR 102158779B1
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evaporator
temperature
supply line
processing chamber
hydrogen peroxide
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KR20150112876A (ko
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베르트 용블루트
디터르 피에뤽스
코르넬리위스 아. 판데르예흐트
뤼시안 이디라
랏코 헤라르트 방크라스
테오도뤼스 흐.므. 오스테를라컨
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에이에스엠 아이피 홀딩 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/013—Separation; Purification; Concentration
    • C01B15/017—Anhydrous hydrogen peroxide; Anhydrous solutions or gaseous mixtures containing hydrogen peroxide
    • H01L21/203—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020150042555A 2014-03-28 2015-03-26 반도체 처리 챔버에 과산화수소를 전달하는 방법 및 시스템 Active KR102158779B1 (ko)

Applications Claiming Priority (2)

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US201461972005P 2014-03-28 2014-03-28
US61/972,005 2014-03-28

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KR20150112876A KR20150112876A (ko) 2015-10-07
KR102158779B1 true KR102158779B1 (ko) 2020-09-23

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US (1) US10343907B2 (enExample)
JP (1) JP6339512B2 (enExample)
KR (1) KR102158779B1 (enExample)
TW (1) TWI682043B (enExample)

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CN109195639B (zh) * 2016-04-27 2021-09-14 利乐拉瓦尔集团及财务有限公司 过氧化氢蒸发装置和蒸发过氧化氢的方法
CN109690730B (zh) * 2016-06-20 2023-03-31 应用材料公司 在高温下去除处理腔室中的硼-碳残留物的清洁工艺
WO2018179507A1 (ja) * 2017-03-27 2018-10-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US11788190B2 (en) * 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
EP3786321A3 (de) * 2019-08-27 2021-03-17 Albert-Ludwigs-Universität Freiburg Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
EP4190939A4 (en) 2020-07-27 2024-09-25 Jiangsu Favored Nanotechnology Co., Ltd. RAW MATERIAL GASIFICATION DEVICE, FILM COATING DEVICE, FILM COATING APPARATUS AND FEEDING METHOD THEREFOR
CN111945135B (zh) * 2020-07-27 2022-04-26 江苏菲沃泰纳米科技股份有限公司 二进料蒸发装置及其进料方法
KR102310908B1 (ko) * 2021-04-30 2021-10-08 (주) 리노닉스 질소 가스의 단독 사용이 가능한 캐리어 가스 공급장치

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TWI682043B (zh) 2020-01-11
US10343907B2 (en) 2019-07-09
JP2015192148A (ja) 2015-11-02
US20150279693A1 (en) 2015-10-01
TW201544611A (zh) 2015-12-01
KR20150112876A (ko) 2015-10-07
JP6339512B2 (ja) 2018-06-06

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