TWI682043B - 輸送過氧化氫至半導體處理腔室的系統以及用於半導體處理的方法 - Google Patents

輸送過氧化氫至半導體處理腔室的系統以及用於半導體處理的方法 Download PDF

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TWI682043B
TWI682043B TW104108551A TW104108551A TWI682043B TW I682043 B TWI682043 B TW I682043B TW 104108551 A TW104108551 A TW 104108551A TW 104108551 A TW104108551 A TW 104108551A TW I682043 B TWI682043 B TW I682043B
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evaporator
feed line
processing chamber
temperature
semiconductor processing
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TW104108551A
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Chinese (zh)
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TW201544611A (zh
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伯特 宗補羅度
迪特爾 皮耶賀
德 捷 康奈爾斯Ａ 樊
路西安 堤拉
瑞德寇 吉瑞德 班克瑞斯
式朵拉斯Ｇ Ｍ 亞斯特雷肯
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荷蘭商Ａｓｍ Ｉｐ控股公司
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/013—Separation; Purification; Concentration
    • C01B15/017—Anhydrous hydrogen peroxide; Anhydrous solutions or gaseous mixtures containing hydrogen peroxide
    • H10P72/0402—

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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW104108551A 2014-03-28 2015-03-18 輸送過氧化氫至半導體處理腔室的系統以及用於半導體處理的方法 TWI682043B (zh)

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US201461972005P 2014-03-28 2014-03-28
US61/972,005 2014-03-28

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TWI682043B true TWI682043B (zh) 2020-01-11

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US (1) US10343907B2 (enExample)
JP (1) JP6339512B2 (enExample)
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US20190083669A1 (en) * 2016-04-27 2019-03-21 Tetra Laval Holdings & Finance S.A. A hydrogen peroxide evaporation device, and a method for evaporating hydrogen peroxide
US10679830B2 (en) * 2016-06-20 2020-06-09 Applied Materials, Inc. Cleaning process for removing boron-carbon residuals in processing chamber at high temperature
WO2018179507A1 (ja) * 2017-03-27 2018-10-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US11788190B2 (en) * 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
EP3786321A3 (de) 2019-08-27 2021-03-17 Albert-Ludwigs-Universität Freiburg Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
CN111945135B (zh) * 2020-07-27 2022-04-26 江苏菲沃泰纳米科技股份有限公司 二进料蒸发装置及其进料方法
JP7556128B2 (ja) 2020-07-27 2024-09-25 江蘇菲沃泰納米科技股▲フン▼有限公司 原料気化装置、コーティング装置、コーティング機器及びその材料投入方法
KR102310908B1 (ko) * 2021-04-30 2021-10-08 (주) 리노닉스 질소 가스의 단독 사용이 가능한 캐리어 가스 공급장치

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KR102158779B1 (ko) 2020-09-23
JP2015192148A (ja) 2015-11-02
JP6339512B2 (ja) 2018-06-06
US20150279693A1 (en) 2015-10-01
TW201544611A (zh) 2015-12-01
KR20150112876A (ko) 2015-10-07
US10343907B2 (en) 2019-07-09

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