TWI682043B - 輸送過氧化氫至半導體處理腔室的系統以及用於半導體處理的方法 - Google Patents
輸送過氧化氫至半導體處理腔室的系統以及用於半導體處理的方法 Download PDFInfo
- Publication number
- TWI682043B TWI682043B TW104108551A TW104108551A TWI682043B TW I682043 B TWI682043 B TW I682043B TW 104108551 A TW104108551 A TW 104108551A TW 104108551 A TW104108551 A TW 104108551A TW I682043 B TWI682043 B TW I682043B
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- Prior art keywords
- evaporator
- feed line
- processing chamber
- temperature
- semiconductor processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 73
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000001704 evaporation Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 14
- 230000008020 evaporation Effects 0.000 description 13
- 230000001590 oxidative effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- -1 steam Chemical compound 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920013730 reactive polymer Polymers 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/01—Hydrogen peroxide
- C01B15/013—Separation; Purification; Concentration
- C01B15/017—Anhydrous hydrogen peroxide; Anhydrous solutions or gaseous mixtures containing hydrogen peroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461972005P | 2014-03-28 | 2014-03-28 | |
| US61/972,005 | 2014-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201544611A TW201544611A (zh) | 2015-12-01 |
| TWI682043B true TWI682043B (zh) | 2020-01-11 |
Family
ID=54191409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104108551A TWI682043B (zh) | 2014-03-28 | 2015-03-18 | 輸送過氧化氫至半導體處理腔室的系統以及用於半導體處理的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10343907B2 (enExample) |
| JP (1) | JP6339512B2 (enExample) |
| KR (1) | KR102158779B1 (enExample) |
| TW (1) | TWI682043B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109195639B (zh) * | 2016-04-27 | 2021-09-14 | 利乐拉瓦尔集团及财务有限公司 | 过氧化氢蒸发装置和蒸发过氧化氢的方法 |
| CN109690730B (zh) * | 2016-06-20 | 2023-03-31 | 应用材料公司 | 在高温下去除处理腔室中的硼-碳残留物的清洁工艺 |
| WO2018179507A1 (ja) * | 2017-03-27 | 2018-10-04 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
| US11788190B2 (en) * | 2019-07-05 | 2023-10-17 | Asm Ip Holding B.V. | Liquid vaporizer |
| EP3786321A3 (de) * | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
| EP4190939A4 (en) | 2020-07-27 | 2024-09-25 | Jiangsu Favored Nanotechnology Co., Ltd. | RAW MATERIAL GASIFICATION DEVICE, FILM COATING DEVICE, FILM COATING APPARATUS AND FEEDING METHOD THEREFOR |
| CN111945135B (zh) * | 2020-07-27 | 2022-04-26 | 江苏菲沃泰纳米科技股份有限公司 | 二进料蒸发装置及其进料方法 |
| KR102310908B1 (ko) * | 2021-04-30 | 2021-10-08 | (주) 리노닉스 | 질소 가스의 단독 사용이 가능한 캐리어 가스 공급장치 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH02161726A (ja) * | 1988-12-14 | 1990-06-21 | Mitsubishi Electric Corp | 電子部材または電子デバイスの製造方法 |
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| US5242468A (en) * | 1991-03-19 | 1993-09-07 | Startec Ventures, Inc. | Manufacture of high precision electronic components with ultra-high purity liquids |
| WO1994001885A1 (en) | 1992-07-04 | 1994-01-20 | Christopher David Dobson | A method of treating a semiconductor wafer |
| JP3017637B2 (ja) | 1994-04-15 | 2000-03-13 | シャープ株式会社 | 洗浄装置 |
| JPH08313468A (ja) * | 1995-05-24 | 1996-11-29 | Taiyo Toyo Sanso Co Ltd | 過酸化水素蒸気の濃度検出方法及びその装置 |
| US5944940A (en) * | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
| JP3291227B2 (ja) | 1997-11-28 | 2002-06-10 | 大陽東洋酸素株式会社 | 過酸化水素蒸気による処理システムにおける過酸化水素蒸気濃度検出方法及びその装置 |
| FR2774912B1 (fr) * | 1998-02-16 | 2000-09-01 | Sidel Sa | Procede pour steriliser des corps creux et dispositif pour la mise en oeuvre |
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| JP2001230246A (ja) | 2000-02-17 | 2001-08-24 | Mitsubishi Heavy Ind Ltd | 半導体の熱酸化方法および熱酸化装置 |
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| US6606917B2 (en) * | 2001-11-26 | 2003-08-19 | Emerson Electric Co. | High purity coriolis mass flow controller |
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2015
- 2015-03-17 US US14/660,789 patent/US10343907B2/en active Active
- 2015-03-18 TW TW104108551A patent/TWI682043B/zh active
- 2015-03-20 JP JP2015058314A patent/JP6339512B2/ja active Active
- 2015-03-26 KR KR1020150042555A patent/KR102158779B1/ko active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH02161726A (ja) * | 1988-12-14 | 1990-06-21 | Mitsubishi Electric Corp | 電子部材または電子デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102158779B1 (ko) | 2020-09-23 |
| US10343907B2 (en) | 2019-07-09 |
| JP2015192148A (ja) | 2015-11-02 |
| US20150279693A1 (en) | 2015-10-01 |
| TW201544611A (zh) | 2015-12-01 |
| KR20150112876A (ko) | 2015-10-07 |
| JP6339512B2 (ja) | 2018-06-06 |
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