JP6330705B2 - 半導体装置およびその製造方法ならびに電力変換装置 - Google Patents

半導体装置およびその製造方法ならびに電力変換装置 Download PDF

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JP6330705B2
JP6330705B2 JP2015060424A JP2015060424A JP6330705B2 JP 6330705 B2 JP6330705 B2 JP 6330705B2 JP 2015060424 A JP2015060424 A JP 2015060424A JP 2015060424 A JP2015060424 A JP 2015060424A JP 6330705 B2 JP6330705 B2 JP 6330705B2
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semiconductor layer
semiconductor device
type
ion implantation
type semiconductor
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JP2016181580A (ja
JP2016181580A5 (enExample
Inventor
隆樹 丹羽
隆樹 丹羽
岡　徹
徹 岡
正芳 小嵜
正芳 小嵜
隆弘 藤井
隆弘 藤井
幸久 上野
幸久 上野
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2015060424A priority Critical patent/JP6330705B2/ja
Priority to US15/060,473 priority patent/US9905432B2/en
Publication of JP2016181580A publication Critical patent/JP2016181580A/ja
Publication of JP2016181580A5 publication Critical patent/JP2016181580A5/ja
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    • H10P95/904—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H10P30/206—
    • H10P30/212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP2015060424A 2015-03-24 2015-03-24 半導体装置およびその製造方法ならびに電力変換装置 Active JP6330705B2 (ja)

Priority Applications (2)

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JP2015060424A JP6330705B2 (ja) 2015-03-24 2015-03-24 半導体装置およびその製造方法ならびに電力変換装置
US15/060,473 US9905432B2 (en) 2015-03-24 2016-03-03 Semiconductor device, method for manufacturing the same and power converter

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JP2015060424A JP6330705B2 (ja) 2015-03-24 2015-03-24 半導体装置およびその製造方法ならびに電力変換装置

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JP2016181580A JP2016181580A (ja) 2016-10-13
JP2016181580A5 JP2016181580A5 (enExample) 2017-08-03
JP6330705B2 true JP6330705B2 (ja) 2018-05-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12527023B2 (en) 2021-02-24 2026-01-13 Panasonic Holdings Corporation Nitride semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636663B2 (en) 2017-03-29 2020-04-28 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
JP6801555B2 (ja) * 2017-03-29 2020-12-16 豊田合成株式会社 半導体装置の製造方法
JP6791083B2 (ja) * 2017-09-28 2020-11-25 豊田合成株式会社 半導体装置の製造方法
JP7024319B2 (ja) * 2017-10-24 2022-02-24 富士電機株式会社 ＧａＮ系半導体装置の製造方法およびＧａＮ系半導体装置
JP6828697B2 (ja) * 2018-02-06 2021-02-10 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体装置およびｉｉｉ族窒化物半導体基板の製造方法
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
JP6927116B2 (ja) * 2018-03-28 2021-08-25 豊田合成株式会社 半導体装置

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JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
JP2003051613A (ja) * 2002-05-20 2003-02-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及び素子の製造方法
JP2004128189A (ja) 2002-10-02 2004-04-22 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体の製造方法
JP2004356257A (ja) 2003-05-28 2004-12-16 Toyota Central Res & Dev Lab Inc ｐ型ＩＩＩ族窒化物半導体の製造方法
JP2008135700A (ja) 2006-11-01 2008-06-12 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子
JP5141037B2 (ja) 2007-02-21 2013-02-13 株式会社豊田中央研究所 半導体装置の製造方法
JP5358955B2 (ja) * 2008-01-15 2013-12-04 住友電気工業株式会社 ｐ型窒化ガリウム系半導体領域を形成する方法
JP5432480B2 (ja) * 2008-07-02 2014-03-05 ルネサスエレクトロニクス株式会社 Ｓｉ基板上のＧａＮ系デバイスの熱処理方法
JP5845714B2 (ja) 2011-08-19 2016-01-20 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5763514B2 (ja) 2011-12-13 2015-08-12 トヨタ自動車株式会社 スイッチング素子の製造方法
JP6047995B2 (ja) * 2012-08-22 2016-12-21 住友電気工業株式会社 Ｉｉｉ族窒化物半導体を作製する方法、半導体素子を作製する方法、ｉｉｉ族窒化物半導体装置、熱処理を行う方法
JP6098259B2 (ja) * 2013-03-19 2017-03-22 豊田合成株式会社 半導体装置の製造方法
JP2014225506A (ja) * 2013-05-15 2014-12-04 住友電気工業株式会社 窒化ガリウム系半導体層の製造方法、窒化ガリウム系半導体層、および窒化ガリウム系半導体基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12527023B2 (en) 2021-02-24 2026-01-13 Panasonic Holdings Corporation Nitride semiconductor device

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US20160284563A1 (en) 2016-09-29
JP2016181580A (ja) 2016-10-13

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