JP6324756B2 - 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 - Google Patents
位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 Download PDFInfo
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- JP6324756B2 JP6324756B2 JP2014038329A JP2014038329A JP6324756B2 JP 6324756 B2 JP6324756 B2 JP 6324756B2 JP 2014038329 A JP2014038329 A JP 2014038329A JP 2014038329 A JP2014038329 A JP 2014038329A JP 6324756 B2 JP6324756 B2 JP 6324756B2
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- film
- phase shift
- shift mask
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- gas
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- 238000004519 manufacturing process Methods 0.000 title claims description 166
- 238000000034 method Methods 0.000 title claims description 88
- 239000007789 gas Substances 0.000 claims description 292
- 238000005530 etching Methods 0.000 claims description 266
- 239000000758 substrate Substances 0.000 claims description 162
- 239000011651 chromium Substances 0.000 claims description 119
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 112
- 229910052804 chromium Inorganic materials 0.000 claims description 112
- 238000004544 sputter deposition Methods 0.000 claims description 108
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- 238000001039 wet etching Methods 0.000 claims description 90
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 77
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 62
- 239000000203 mixture Substances 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 41
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 38
- 239000012298 atmosphere Substances 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 35
- 238000005477 sputtering target Methods 0.000 claims description 26
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 22
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- -1 silicide nitride Chemical class 0.000 claims description 15
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- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 claims description 9
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- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 9
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- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 5
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910021355 zirconium silicide Inorganic materials 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
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- 239000002356 single layer Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
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- 229910021563 chromium fluoride Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
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- 230000008034 disappearance Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229960001730 nitrous oxide Drugs 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 102100036738 Guanine nucleotide-binding protein subunit alpha-11 Human genes 0.000 description 1
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- 239000001273 butane Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014038329A JP6324756B2 (ja) | 2013-03-19 | 2014-02-28 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013056295 | 2013-03-19 | ||
| JP2013056295 | 2013-03-19 | ||
| JP2014038329A JP6324756B2 (ja) | 2013-03-19 | 2014-02-28 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018075943A Division JP6553240B2 (ja) | 2013-03-19 | 2018-04-11 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014206729A JP2014206729A (ja) | 2014-10-30 |
| JP2014206729A5 JP2014206729A5 (fr) | 2017-03-09 |
| JP6324756B2 true JP6324756B2 (ja) | 2018-05-16 |
Family
ID=51758359
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014038329A Active JP6324756B2 (ja) | 2013-03-19 | 2014-02-28 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP2018075943A Active JP6553240B2 (ja) | 2013-03-19 | 2018-04-11 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018075943A Active JP6553240B2 (ja) | 2013-03-19 | 2018-04-11 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6324756B2 (fr) |
| KR (2) | KR102134487B1 (fr) |
| TW (2) | TWI707053B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018109792A (ja) * | 2013-03-19 | 2018-07-12 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6661262B2 (ja) * | 2014-05-29 | 2020-03-11 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
| JP6391495B2 (ja) * | 2015-02-23 | 2018-09-19 | Hoya株式会社 | フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法 |
| JP6502143B2 (ja) * | 2015-03-27 | 2019-04-17 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| WO2016162157A1 (fr) * | 2015-04-07 | 2016-10-13 | Asml Netherlands B.V. | Dispositifs de formation de motifs pour utilisation dans un appareil lithographique, procédés de fabrication et d'utilisation de tels dispositifs de formation de motifs |
| JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
| JP2017182052A (ja) * | 2016-03-24 | 2017-10-05 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスク及び表示装置の製造方法 |
| TWI615668B (zh) * | 2016-11-18 | 2018-02-21 | 台灣積體電路製造股份有限公司 | 相位移光罩的形成方法 |
| JP2018106022A (ja) * | 2016-12-27 | 2018-07-05 | Hoya株式会社 | 表示装置製造用フォトマスクの製造方法および表示装置の製造方法 |
| SG10201911900YA (en) * | 2017-02-27 | 2020-02-27 | Hoya Corp | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| US11048160B2 (en) * | 2017-06-14 | 2021-06-29 | Hoya Corporation | Mask blank, phase shift mask and method for manufacturing semiconductor device |
| CN110196530B (zh) * | 2018-02-27 | 2024-05-14 | Hoya株式会社 | 相移掩模坯料、相移掩模的制造方法、及显示装置的制造方法 |
| JP7073246B2 (ja) * | 2018-02-27 | 2022-05-23 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスクの製造方法、及び表示装置の製造方法 |
| WO2020054131A1 (fr) * | 2018-09-14 | 2020-03-19 | 株式会社ニコン | Ébauche de masque à décalage de phase, masque à décalage de phase, procédé d'exposition à la lumière et procédé de production de dispositif |
| JP7217620B2 (ja) * | 2018-11-22 | 2023-02-03 | アルバック成膜株式会社 | マスクブランクスおよびマスク |
| JP7059234B2 (ja) * | 2018-11-30 | 2022-04-25 | Hoya株式会社 | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 |
| JP7303077B2 (ja) * | 2019-09-10 | 2023-07-04 | アルバック成膜株式会社 | マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61272746A (ja) * | 1985-05-28 | 1986-12-03 | Asahi Glass Co Ltd | フオトマスクブランクおよびフオトマスク |
| JPH02198835A (ja) * | 1989-01-27 | 1990-08-07 | Toppan Printing Co Ltd | マスター用ガラス基板 |
| JPH06123961A (ja) * | 1992-10-12 | 1994-05-06 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法 |
| KR100295385B1 (ko) * | 1993-04-09 | 2001-09-17 | 기타지마 요시토시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법 |
| JP3229446B2 (ja) * | 1993-07-13 | 2001-11-19 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス |
| JP3256345B2 (ja) * | 1993-07-26 | 2002-02-12 | アルバック成膜株式会社 | フォトマスクブランクスおよびフォトマスク |
| JPH0876353A (ja) * | 1994-09-08 | 1996-03-22 | Nec Corp | 位相シフトマスクの製造方法 |
| JPH08123010A (ja) * | 1994-10-28 | 1996-05-17 | Toppan Printing Co Ltd | 位相シフトマスクおよびそれに用いるマスクブランク |
| JP2001174973A (ja) * | 1999-12-15 | 2001-06-29 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス |
| JP2001147516A (ja) * | 2000-11-27 | 2001-05-29 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP4919259B2 (ja) * | 2006-03-30 | 2012-04-18 | Ｈｏｙａ株式会社 | マスクブランク及びフォトマスク |
| JP5115953B2 (ja) * | 2007-03-30 | 2013-01-09 | Ｈｏｙａ株式会社 | フォトマスクブランク及びフォトマスク |
| JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
| JP5274393B2 (ja) * | 2009-06-30 | 2013-08-28 | アルバック成膜株式会社 | ハーフトーンマスクの製造方法 |
| CN102834773B (zh) * | 2010-04-09 | 2016-04-06 | Hoya株式会社 | 相移掩模坯料及其制造方法、以及相移掩模 |
| JP6324756B2 (ja) * | 2013-03-19 | 2018-05-16 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
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| TW201443252A (zh) | 2014-11-16 |
| KR20140114797A (ko) | 2014-09-29 |
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| KR102134487B1 (ko) | 2020-07-16 |
| JP2014206729A (ja) | 2014-10-30 |
| KR102246114B1 (ko) | 2021-04-29 |
| JP6553240B2 (ja) | 2019-07-31 |
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