JP6319151B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP6319151B2
JP6319151B2 JP2015059436A JP2015059436A JP6319151B2 JP 6319151 B2 JP6319151 B2 JP 6319151B2 JP 2015059436 A JP2015059436 A JP 2015059436A JP 2015059436 A JP2015059436 A JP 2015059436A JP 6319151 B2 JP6319151 B2 JP 6319151B2
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semiconductor layer
nitride semiconductor
semiconductor device
nitride
electrode
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Japanese (ja)
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JP2016181534A5 (OSRAM
JP2016181534A (ja
Inventor
隆樹 丹羽
隆樹 丹羽
正芳 小嵜
正芳 小嵜
隆弘 藤井
隆弘 藤井
岡　徹
徹 岡
幸久 上野
幸久 上野
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2015059436A priority Critical patent/JP6319151B2/ja
Priority to US15/065,708 priority patent/US9704952B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/129—Cathode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2015059436A 2015-03-23 2015-03-23 半導体装置および半導体装置の製造方法 Active JP6319151B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015059436A JP6319151B2 (ja) 2015-03-23 2015-03-23 半導体装置および半導体装置の製造方法
US15/065,708 US9704952B2 (en) 2015-03-23 2016-03-09 Semiconductor device and method for manufacturing semiconductor device

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Application Number Priority Date Filing Date Title
JP2015059436A JP6319151B2 (ja) 2015-03-23 2015-03-23 半導体装置および半導体装置の製造方法

Publications (3)

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JP2016181534A JP2016181534A (ja) 2016-10-13
JP2016181534A5 JP2016181534A5 (OSRAM) 2017-07-27
JP6319151B2 true JP6319151B2 (ja) 2018-05-09

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Publication number Priority date Publication date Assignee Title
WO2016143265A1 (ja) * 2015-03-11 2016-09-15 パナソニック株式会社 窒化物半導体装置
JP6581614B2 (ja) 2017-03-14 2019-09-25 株式会社サイオクス 半導体構造体の製造方法、検査方法、およびプログラム
TWI707438B (zh) * 2019-07-19 2020-10-11 力晶積成電子製造股份有限公司 電路架構
TWI791871B (zh) 2019-07-19 2023-02-11 力晶積成電子製造股份有限公司 通道全環繞半導體裝置及其製造方法
JP7337739B2 (ja) 2020-03-19 2023-09-04 株式会社東芝 半導体装置

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JPH025482A (ja) * 1988-06-24 1990-01-10 Hitachi Ltd 縦形ｍｏｓｆｅｔ
JP4167313B2 (ja) * 1997-03-18 2008-10-15 株式会社東芝 高耐圧電力用半導体装置
ATE535010T1 (de) * 2001-07-12 2011-12-15 Univ Mississippi State Verfahren zur herstllung selbstausgerichteten transistortopologien in siliziumkarbid durch verwendung selektiver epitaxie
GB0312512D0 (en) * 2003-05-31 2003-07-09 Koninkl Philips Electronics Nv Termination structures for semiconductor devices and the manufacture thereof
JP4561247B2 (ja) 2004-08-31 2010-10-13 株式会社デンソー 半導体装置およびその製造方法
DE102006025958B3 (de) 2006-06-02 2007-10-11 Infineon Technologies Ag Sanft schaltendes Halbleiterbauelement mit hoher Robustheit und geringen Schaltverlusten
JP2010114248A (ja) * 2008-11-06 2010-05-20 Toyota Central R&D Labs Inc 半導体装置
JP5582102B2 (ja) 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
JP5721902B2 (ja) * 2012-03-16 2015-05-20 三菱電機株式会社 半導体装置およびその製造方法
JP6092680B2 (ja) * 2013-03-26 2017-03-08 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP6107597B2 (ja) * 2013-03-26 2017-04-05 豊田合成株式会社 半導体装置およびその製造方法

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US9704952B2 (en) 2017-07-11
US20160284843A1 (en) 2016-09-29

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