JP6309723B2 - 薄膜トランジスタアレイ基板及びそれを含む表示装置 - Google Patents
薄膜トランジスタアレイ基板及びそれを含む表示装置 Download PDFInfo
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- JP6309723B2 JP6309723B2 JP2013169759A JP2013169759A JP6309723B2 JP 6309723 B2 JP6309723 B2 JP 6309723B2 JP 2013169759 A JP2013169759 A JP 2013169759A JP 2013169759 A JP2013169759 A JP 2013169759A JP 6309723 B2 JP6309723 B2 JP 6309723B2
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- 239000000758 substrate Substances 0.000 title description 13
- 239000010409 thin film Substances 0.000 title description 4
- 239000003990 capacitor Substances 0.000 claims description 78
- 238000009413 insulation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 185
- 239000010408 film Substances 0.000 description 46
- 101000685663 Homo sapiens Sodium/nucleoside cotransporter 1 Proteins 0.000 description 21
- 101000821827 Homo sapiens Sodium/nucleoside cotransporter 2 Proteins 0.000 description 21
- 102100023116 Sodium/nucleoside cotransporter 1 Human genes 0.000 description 21
- 102100021541 Sodium/nucleoside cotransporter 2 Human genes 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Description
CNT1 第1コンタクトホール
CNT2 第2コンタクトホール
NODCNT ノードコンタクトホール
CNOD 連結ノード
VIA ビアホール
SCn スキャンライン
DAm データライン
G1 第1ゲート電極
ELVDDL 駆動電源ライン
C1 第1キャパシタ
CE1 第1キャパシタ電極
CE2 第2キャパシタ電極
T1 第1TFT
T2 第2TFT
Claims (8)
- 一つ以上のTFT及び一つ以上のキャパシタを含み、複数の配線に連結された画素回路、及び前記画素回路と連結された表示素子を含む複数の画素と、
前記画素に位置し、前記TFTのアクティブ層である第1導電層と、
前記画素に位置し、前記第1導電層と異なる層に配置された第2導電層と、
前記第1導電層上に形成された第1コンタクトホール、及び前記第2導電層上に形成された第2コンタクトホールが絶縁層によって分離されず、一体に形成されたノードコンタクトホールと、
前記ノードコンタクトホールに形成され、前記第1導電層と前記第2導電層とを連結する連結ノードと、を備え、
前記一つ以上のTFTは、前記表示素子に駆動電源を供給する駆動TFT及び前記駆動TFTの閾値電圧を補償する補償TFTを含み、
前記一つ以上のキャパシタは、前記画素回路に供給されるデータ信号を保存するストレージキャパシタを含み、
前記第1導電層は、前記ストレージキャパシタの一方の電極であって、前記補償TFTのドレイン電極であり、
前記連結ノードは、前記配線のうち前記画素回路にデータ信号を供給するデータ配線と同一層に形成される、表示装置。 - 前記連結ノードは、前記第1導電層及び前記第2導電層と異なる層に配置されることを特徴とする請求項1に記載の表示装置。
- 前記ノードコンタクトホールが形成される領域で、前記第1導電層と前記第2導電層との一部が重畳することを特徴とする請求項1又は2に記載の表示装置。
- 前記第1コンタクトホールと前記第2コンタクトホールとの間には、前記絶縁層によるバンクが形成されていないことを特徴とする請求項1乃至3のいずれか一項に記載の表示装置。
- 前記絶縁層は、前記第1導電層と前記第2導電層との間に形成された第1絶縁層と、前記第1導電層及び前記第2導電層のうち上に形成された層と前記連結ノードとの間に形成された第2絶縁層と、を備えることを特徴とする請求項1乃至4のいずれか一項に記載の表示装置。
- 前記ノードコンタクトホールが形成される領域で、前記第1導電層と前記第2導電層との一部が重畳する領域には、前記第2絶縁層が形成されていないことを特徴とする請求項5に記載の表示装置。
- 前記表示素子は、第1電極、第2電極、及び前記第1電極と前記第2電極との間に配置された有機発光層を含む有機発光素子であることを特徴とする請求項1乃至6のいずれか一項に記載の表示装置。
- 前記有機発光素子と前記連結ノードとの間に、平坦化層が形成されることを特徴とする請求項7に記載の表示装置。
Applications Claiming Priority (2)
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KR20120093295A KR101434366B1 (ko) | 2012-08-24 | 2012-08-24 | 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치 |
KR10-2012-0093295 | 2012-08-24 |
Related Child Applications (1)
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JP2018047940A Division JP6608475B2 (ja) | 2012-08-24 | 2018-03-15 | Tftアレイ基板 |
Publications (2)
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JP2014044421A JP2014044421A (ja) | 2014-03-13 |
JP6309723B2 true JP6309723B2 (ja) | 2018-04-11 |
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JP2013169759A Active JP6309723B2 (ja) | 2012-08-24 | 2013-08-19 | 薄膜トランジスタアレイ基板及びそれを含む表示装置 |
JP2018047940A Active JP6608475B2 (ja) | 2012-08-24 | 2018-03-15 | Tftアレイ基板 |
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JP2018047940A Active JP6608475B2 (ja) | 2012-08-24 | 2018-03-15 | Tftアレイ基板 |
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US (4) | US9136316B2 (ja) |
EP (2) | EP4307377A3 (ja) |
JP (2) | JP6309723B2 (ja) |
KR (1) | KR101434366B1 (ja) |
CN (3) | CN108538857B (ja) |
TW (1) | TWI625852B (ja) |
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US9941307B2 (en) | 2018-04-10 |
CN108538857A (zh) | 2018-09-14 |
US20180226436A1 (en) | 2018-08-09 |
CN103633146B (zh) | 2018-05-18 |
KR101434366B1 (ko) | 2014-08-26 |
JP2014044421A (ja) | 2014-03-13 |
EP2701195A1 (en) | 2014-02-26 |
EP4307377A2 (en) | 2024-01-17 |
US20220181360A1 (en) | 2022-06-09 |
TW201409682A (zh) | 2014-03-01 |
US20140054562A1 (en) | 2014-02-27 |
TWI625852B (zh) | 2018-06-01 |
CN103633146A (zh) | 2014-03-12 |
CN203553169U (zh) | 2014-04-16 |
US9136316B2 (en) | 2015-09-15 |
US20150364505A1 (en) | 2015-12-17 |
KR20140026196A (ko) | 2014-03-05 |
US11264412B2 (en) | 2022-03-01 |
JP2018109787A (ja) | 2018-07-12 |
EP4307377A3 (en) | 2024-04-03 |
EP2701195B1 (en) | 2023-11-29 |
JP6608475B2 (ja) | 2019-11-20 |
CN108538857B (zh) | 2023-07-28 |
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