JP6301527B2 - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
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- JP6301527B2 JP6301527B2 JP2017073771A JP2017073771A JP6301527B2 JP 6301527 B2 JP6301527 B2 JP 6301527B2 JP 2017073771 A JP2017073771 A JP 2017073771A JP 2017073771 A JP2017073771 A JP 2017073771A JP 6301527 B2 JP6301527 B2 JP 6301527B2
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- 239000004065 semiconductor Substances 0.000 title claims description 233
- 239000010410 layer Substances 0.000 claims description 253
- 230000017525 heat dissipation Effects 0.000 claims description 143
- 239000000463 material Substances 0.000 claims description 64
- 229910052582 BN Inorganic materials 0.000 claims description 52
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims description 8
- 239000002135 nanosheet Substances 0.000 claims description 6
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 3
- 230000000694 effects Effects 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4821—Bridge structure with air gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
本発明の実施例は、半導体デバイスを提供し、当該半導体デバイス基板と、基板に位置し、活性領域と活性領域の外部に位置する不活性領域が設けられる多層半導体層と、活性領域内に位置するゲート電極、ソース電極及びドレイン電極と、活性領域の少なくとも一部を覆い、放熱材料を含む放熱層とを備える。
放熱層は、活性領域全体を覆ってもよく、不活性領域にさらに延伸してもよい。
放熱材料は、窒化ホウ素を含んでもよい。例えば、放熱層の材料は、単層の窒化ホウ素、2層の窒化ホウ素、多層の窒化ホウ素又は窒化ホウ素のナノシートのいずれかの1種であってもよい。
基板100と、
基板100に位置する多層半導体層110と、
多層半導体層110に設けられる活性領域120、及び活性領域120の外部に位置する不活性領域130と、
多層半導体層110上の活性領域120中に位置するゲート電極121、ソース電極122及びドレイン電極123と、
活性領域120の生じた熱を導出するために活性領域120の少なくとも一部を覆う放熱層140とを備える。
Claims (16)
- 基板と、
前記基板に位置し、活性領域と前記活性領域の外部に位置する不活性領域とが設けられる多層半導体層と、
前記活性領域内に位置するゲート電極、ソース電極及びドレイン電極と、
前記活性領域の少なくとも一部を覆い、放熱材料を含む放熱層と、
前記放熱層に対する前記ソース電極の反対側に位置し、前記多層半導体層及び前記基板を貫通し、放熱材料が充填された第1貫通孔を備え、
前記多層半導体層に対する前記基板の反対側に位置する背面金属層をさらに備え、
前記第1貫通孔は、背面金属層を貫通し、前記背面金属層は、前記第1貫通孔の孔壁を覆う、
ことを特徴とする半導体デバイス。 - 基板と、
前記基板に位置し、活性領域と前記活性領域の外部に位置する不活性領域とが設けられる多層半導体層と、
前記活性領域内に位置するゲート電極、ソース電極及びドレイン電極と、
前記活性領域の少なくとも一部を覆い、放熱材料を含む放熱層と、
前記放熱層に対する前記ソース電極の反対側に位置し、前記多層半導体層及び前記基板を貫通し、放熱材料が充填された第1貫通孔を備え、
前記第1貫通孔に充填された前記放熱材料は、窒化ホウ素を含む、
ことを特徴とする半導体デバイス。 - 基板と、
前記基板に位置し、活性領域と前記活性領域の外部に位置する不活性領域とが設けられる多層半導体層と、
前記活性領域内に位置するゲート電極、ソース電極及びドレイン電極と、
前記活性領域の少なくとも一部を覆い、放熱材料を含む放熱層と、
前記不活性領域に位置し、前記ソース電極に電気接続するソース電極パッドと、
前記放熱層に対する前記ソース電極の反対側に位置し、前記多層半導体層及び前記基板を貫通し、放熱材料が充填された第2貫通孔を備え、
前記第2貫通孔に充填された前記放熱材料は、窒化ホウ素を含む、
ことを特徴とする半導体デバイス。 - 前記放熱層は、前記ゲート電極を覆う、ことを特徴とする請求項1〜3のいずれか一項に記載の半導体デバイス。
- 前記放熱層は、前記ソース電極及び前記ドレイン電極をさらに覆う、ことを特徴とする請求項4に記載の半導体デバイス。
- 前記放熱層は、前記活性領域全体を覆う、ことを特徴とする請求項1〜3のいずれか一項に記載の半導体デバイス。
- 前記放熱層は、前記不活性領域にさらに延伸する、ことを特徴とする請求項1〜3のいずれか一項に記載の半導体デバイス。
- 前記放熱材料は、窒化ホウ素を含む、ことを特徴とする請求項1〜3のいずれか一項に記載の半導体デバイス。
- 前記放熱層は、単層の窒化ホウ素、2層の窒化ホウ素、多層の窒化ホウ素及び窒化ホウ素のナノシートのいずれかの1種である、ことを特徴とする請求項8に記載の半導体デバイス。
- 前記放熱層に対向する前記多層半導体層の一側に位置する第1誘電体層をさらに備え、
前記第1誘電体層は、前記ゲート電極と前記ソース電極との間及び前記ゲート電極と前記ドレイン電極との間における前記多層半導体層に少なくとも形成される、ことを特徴とする請求項1〜3のいずれか一項に記載の半導体デバイス。 - 前記第1誘電体層は、前記不活性領域にさらに延伸する、ことを特徴とする請求項10に記載の半導体デバイス。
- 前記第1誘電体層と前記放熱層との間に位置し、前記ゲート電極を覆う第2誘電体層をさらに備える、ことを特徴とする請求項10に記載の半導体デバイス。
- 前記第1誘電体層に対する前記放熱層の反対側に位置する第2誘電体層をさらに備える、ことを特徴とする請求項10に記載の半導体デバイス。
- 前記多層半導体層は、
前記基板に位置するバッファ層と、
前記バッファ層に位置する障壁層と
を備え、
前記障壁層及び前記バッファ層は、ヘテロ接合構造を形成し、前記ソース電極、前記ドレイン電極及び前記ゲート電極は、前記障壁層の表面に位置する、ことを特徴とする請求項1〜3のいずれか一項に記載の半導体デバイス。 - 前記基板と前記バッファ層との間に位置する核生成層をさらに備える、ことを特徴とする請求項14に記載の半導体デバイス。
- 前記基板に対する前記障壁層の反対側に位置するキャップ層をさらに備える、ことを特徴とする請求項14に記載の半導体デバイス。
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CN110416296B (zh) * | 2018-04-26 | 2021-03-26 | 苏州能讯高能半导体有限公司 | 半导体器件、半导体芯片及半导体器件制作方法 |
CN110504297B (zh) * | 2018-05-17 | 2020-11-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于二维电子气调控背栅的二维材料晶体管、制法和应用 |
JP6984753B2 (ja) * | 2018-07-12 | 2021-12-22 | 三菱電機株式会社 | 半導体装置 |
EP3654372B1 (en) | 2018-11-13 | 2021-04-21 | IMEC vzw | Method of forming an integrated circuit with airgaps and corresponding integrated circuit |
CN109659366A (zh) | 2018-12-21 | 2019-04-19 | 英诺赛科(珠海)科技有限公司 | 高电子迁移率晶体管及其制造方法 |
CN116075925A (zh) * | 2020-09-21 | 2023-05-05 | 创世舫科技有限公司 | 具有贯通通路结构的iii-氮化物器件 |
CN112382659A (zh) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | 一种元胞内带绝缘结构的功率半导体器件及制备方法 |
US20220199817A1 (en) | 2020-12-18 | 2022-06-23 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN113013242A (zh) * | 2021-01-29 | 2021-06-22 | 西安电子科技大学 | 基于n-GaN栅的p沟道GaN基异质结场效应晶体管 |
CN113284865A (zh) * | 2021-05-07 | 2021-08-20 | 无锡必创传感科技有限公司 | 具有散热结构的传感器芯片及其制造方法 |
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