JP6299031B2 - 近接センサ - Google Patents
近接センサ Download PDFInfo
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- JP6299031B2 JP6299031B2 JP2013222786A JP2013222786A JP6299031B2 JP 6299031 B2 JP6299031 B2 JP 6299031B2 JP 2013222786 A JP2013222786 A JP 2013222786A JP 2013222786 A JP2013222786 A JP 2013222786A JP 6299031 B2 JP6299031 B2 JP 6299031B2
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- circuit board
- proximity sensor
- sensor according
- storage device
- circuit
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/945—Proximity switches
- H03K17/95—Proximity switches using a magnetic detector
- H03K17/9505—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
Description
3 前部キャップ 4 本体部分
5 開放前端部 6 内部空間
7 後方部分 8 電線
9 成形材料 10 電子構成要素
11 円筒状の側壁 12 前部壁
15 コイル 16 コア
17 回路板 18、19 回路板表面
20 囲い(収納装置) 22 後方接点
23 前部接点 27、28 体積フィラー
34 支持部分
36、37、67、69、70、71 半導体部品
41、42、43、44、45、46 接続パッド
62 センサ回路 64、65、66 電子部品
Claims (14)
- 磁場を発生させるためのコイル(15)及び外部の物体により引起される磁場の変動を検出するためのセンサ回路(62)を有し、該センサ回路(62)が、回路板(17)上に搭載された少なくとも一つの半導体部品(36、37、67、69、70、71)を含み、該コイル(15)及び該回路板(17)が、ハウジング(2)内に配置されており、該ハウジングを介して、該磁場を伝播することができる近接センサであって、該半導体部品(36、37、67、69、70、71)が、気密封止され、かつ該回路板(17)の表面(18、19)上に固定されている囲い(20)内に収容されており、
前記囲い(20)が支持部分(34)を含み、該支持部分は、前記半導体部品(36、37、67、69、70、71)が固定されている側部及び前記回路板(17)に固定されている対向する側部を有しており、該支持部分(34)が、50ppm/℃未満なるズレにて、該回路板(17)の温度係数と一致している温度係数を持つ材料からなっていることを特徴とする近接センサ。 - 不活性な雰囲気を維持するために、前記囲い(20)が減圧下にあり、又は不活性ガスで満たされていることを特徴とする請求項1記載の近接センサ。
- 前記支持部分(34)が、10ppm/℃未満なるズレにて、前記回路板(17)の温度係数と一致している温度係数を持つ材料からなっていることを特徴とする請求項1又は2記載の近接センサ。
- 前記囲い(20)が、実質的に1又はそれ以上の無機物質からなっていることを特徴とする請求項1〜3の少なくとも1項に記載の近接センサ。
- 前記センサ回路(62)が、相互に熱的に連結された少なくとも2つの半導体部品(36、37、67、69、70、71)を含み、該熱的に連結された半導体部品(36、37、67、69、70、71)が、前記囲い(20)内に収容されていることを特徴とする請求項1〜4の少なくとも1項に記載の近接センサ。
- 少なくとも一つのトランジスタ(36、37、67、69、70、71)が収容されている、少なくとも2つの囲い(20)が、前記回路板の表面(18、19)上に固定されていることを特徴とする請求項1〜5の少なくとも1項に記載の近接センサ。
- 前記センサ回路(62)が、前記回路板(17)上に前記囲い(20)から外側に据付けられた電子部品(64、65、66)を含み、該電子部品(64、65、66)が、実質的に無機物質のみを含むことを特徴とする請求項1〜6の少なくとも1項に記載の近接センサ。
- 前記囲い(20)が、前記回路板(17)上で、導体(68)と電気的に接続されている少なくとも2つの接続パッド(41、42、43、44、45、46)を含み、前記半導体部品(36、37、67、69、70、71)が、該接続パッド(41、42、43、44、45、46)と電気的に接続されており、該接続パッド(41、42、43、44、45、46)が、金製金属化層を含むことを特徴とする請求項1〜7の少なくとも1項に記載の近接センサ。
- 前記回路板(17)が、耐熱性ポリイミド、好ましくはポリ(ジフェニルオキシド)−ピロメリトイミドを含むことを特徴とする請求項1〜8の少なくとも1項に記載の近接センサ。
- 前記回路板(17)が、成形材料(9)によって包囲されていることを特徴とする請求項1〜9の少なくとも1項に記載の近接センサ。
- 圧縮性の体積フィラー(27、28)が、前記成形材料(9)と前記回路板(17)の表面(18、19)の少なくとも一部との間に挟まれた状態で配置されていることを特徴とする請求項10記載の近接センサ。
- 前記体積フィラー(27、28)が、合成ゴムフォーム、好ましくはフルオロポリマーエラストマーを含むことを特徴とする請求項11記載の近接センサ。
- 前記コイル(15)が、少なくとも200℃、より好ましくは少なくとも300℃なるキューリー温度を持つコア(16)を含むことを特徴とする請求項1〜12の少なくとも1項に記載の近接センサ。
- 前記ハウジング(2)が、ステンレススチールを含むことを特徴とする請求項1〜13の少なくとも1項に記載の近接センサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12190395.9 | 2012-10-29 | ||
EP12190395.9A EP2725715B1 (en) | 2012-10-29 | 2012-10-29 | Proximity sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014089958A JP2014089958A (ja) | 2014-05-15 |
JP6299031B2 true JP6299031B2 (ja) | 2018-03-28 |
Family
ID=47143602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013222786A Active JP6299031B2 (ja) | 2012-10-29 | 2013-10-25 | 近接センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9239221B2 (ja) |
EP (1) | EP2725715B1 (ja) |
JP (1) | JP6299031B2 (ja) |
CN (1) | CN103795389B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US10392959B2 (en) * | 2012-06-05 | 2019-08-27 | General Electric Company | High temperature flame sensor |
DE102013217892A1 (de) * | 2012-12-20 | 2014-06-26 | Continental Teves Ag & Co. Ohg | Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung |
CN106537589B (zh) * | 2014-07-09 | 2019-09-24 | 三菱电机株式会社 | 半导体装置 |
DE102015103551A1 (de) * | 2015-03-11 | 2016-09-15 | Sick Ag | Steckerbaugruppe für einen Sensor und Verfahren zur Montage einer Steckerbaugruppe für einen Sensor |
CN104790798B (zh) * | 2015-04-07 | 2017-03-15 | 伍可炳 | 防夹伤地铁屏蔽门开关 |
CN104727692B (zh) * | 2015-04-07 | 2017-03-15 | 伍可炳 | 防夹伤地铁屏蔽门门控电路 |
JP6271471B2 (ja) * | 2015-06-12 | 2018-01-31 | 信和株式会社 | 足場の揺れ検出システム及び同システムが配設された足場 |
CN105479470B (zh) * | 2016-01-12 | 2017-06-16 | 佛山市溢釜科技有限公司 | 一种周向无死角位置检知传感器 |
JP6610286B2 (ja) * | 2016-01-22 | 2019-11-27 | オムロン株式会社 | 近接スイッチ |
CN105916339A (zh) * | 2016-05-31 | 2016-08-31 | 天津市建筑设计院 | 一种加速度传感器防水装置及防水方法 |
KR102273785B1 (ko) * | 2017-01-24 | 2021-07-06 | 삼성에스디아이 주식회사 | 배터리 팩 관리 방법 및 시스템 |
JP6968545B2 (ja) * | 2017-02-01 | 2021-11-17 | オムロン株式会社 | 近接センサ |
EP3418694B1 (en) * | 2017-06-21 | 2020-01-01 | Optosys SA | Proximity sensor |
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JP5506503B2 (ja) * | 2010-03-31 | 2014-05-28 | アズビル株式会社 | 近接スイッチ |
US8677617B2 (en) * | 2010-04-28 | 2014-03-25 | International Business Machines Corporation | Printed circuit board edge connector |
DE102010042543B4 (de) * | 2010-06-30 | 2017-06-29 | Vectron International Gmbh | Metallisierung für Hohlraumgehäuse und nicht-magnetisches hermetisch dichtes Hohlraumgehäuse |
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- 2013-10-25 JP JP2013222786A patent/JP6299031B2/ja active Active
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CN103795389B (zh) | 2018-02-06 |
JP2014089958A (ja) | 2014-05-15 |
EP2725715B1 (en) | 2018-12-12 |
US20140117979A1 (en) | 2014-05-01 |
CN103795389A (zh) | 2014-05-14 |
EP2725715A1 (en) | 2014-04-30 |
US9239221B2 (en) | 2016-01-19 |
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