JP6293499B2 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

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Publication number
JP6293499B2
JP6293499B2 JP2014012027A JP2014012027A JP6293499B2 JP 6293499 B2 JP6293499 B2 JP 6293499B2 JP 2014012027 A JP2014012027 A JP 2014012027A JP 2014012027 A JP2014012027 A JP 2014012027A JP 6293499 B2 JP6293499 B2 JP 6293499B2
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JP
Japan
Prior art keywords
vacuum processing
processing apparatus
vacuum
sample stage
chamber
Prior art date
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Active
Application number
JP2014012027A
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English (en)
Japanese (ja)
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JP2015141908A5 (enExample
JP2015141908A (ja
Inventor
浩平 佐藤
浩平 佐藤
牧野　昭孝
昭孝 牧野
一海 田中
一海 田中
優作 属
優作 属
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2014012027A priority Critical patent/JP6293499B2/ja
Priority to TW106122760A priority patent/TWI644382B/zh
Priority to TW103127079A priority patent/TWI600101B/zh
Priority to CN201410408799.8A priority patent/CN104810305B/zh
Priority to KR1020140107805A priority patent/KR101774532B1/ko
Priority to CN201711439328.3A priority patent/CN108155082B/zh
Priority to US14/468,397 priority patent/US11710619B2/en
Publication of JP2015141908A publication Critical patent/JP2015141908A/ja
Publication of JP2015141908A5 publication Critical patent/JP2015141908A5/ja
Priority to KR1020170109634A priority patent/KR101835438B1/ko
Application granted granted Critical
Publication of JP6293499B2 publication Critical patent/JP6293499B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2014012027A 2014-01-27 2014-01-27 真空処理装置 Active JP6293499B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2014012027A JP6293499B2 (ja) 2014-01-27 2014-01-27 真空処理装置
TW103127079A TWI600101B (zh) 2014-01-27 2014-08-07 Vacuum processing equipment
TW106122760A TWI644382B (zh) 2014-01-27 2014-08-07 真空處理裝置
KR1020140107805A KR101774532B1 (ko) 2014-01-27 2014-08-19 진공 처리 장치
CN201410408799.8A CN104810305B (zh) 2014-01-27 2014-08-19 真空处理装置
CN201711439328.3A CN108155082B (zh) 2014-01-27 2014-08-19 真空处理装置的运转方法
US14/468,397 US11710619B2 (en) 2014-01-27 2014-08-26 Vacuum processing apparatus
KR1020170109634A KR101835438B1 (ko) 2014-01-27 2017-08-29 진공 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014012027A JP6293499B2 (ja) 2014-01-27 2014-01-27 真空処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018023776A Division JP6475877B2 (ja) 2018-02-14 2018-02-14 真空処理装置

Publications (3)

Publication Number Publication Date
JP2015141908A JP2015141908A (ja) 2015-08-03
JP2015141908A5 JP2015141908A5 (enExample) 2017-03-02
JP6293499B2 true JP6293499B2 (ja) 2018-03-14

Family

ID=53679672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014012027A Active JP6293499B2 (ja) 2014-01-27 2014-01-27 真空処理装置

Country Status (5)

Country Link
US (1) US11710619B2 (enExample)
JP (1) JP6293499B2 (enExample)
KR (2) KR101774532B1 (enExample)
CN (2) CN104810305B (enExample)
TW (2) TWI644382B (enExample)

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US9293303B2 (en) * 2013-08-30 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Low contamination chamber for surface activation
JP6609425B2 (ja) * 2015-06-17 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6607795B2 (ja) 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
JP6960737B2 (ja) 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
JP6960830B2 (ja) * 2017-11-17 2021-11-05 株式会社日立ハイテク 真空処理装置および真空処理装置の運転方法
CN111433390B (zh) * 2017-12-22 2022-09-27 株式会社村田制作所 成膜装置
JP7083463B2 (ja) 2018-02-23 2022-06-13 株式会社日立ハイテク 真空処理装置
US11424106B2 (en) * 2018-05-28 2022-08-23 Hitachi High-Tech Corporation Plasma processing apparatus
CN109065432A (zh) * 2018-08-03 2018-12-21 德淮半导体有限公司 一种干法刻蚀设备
JP7296739B2 (ja) * 2019-01-31 2023-06-23 東京エレクトロン株式会社 処理装置及び処理装置の動作方法
JP6750928B2 (ja) * 2019-03-01 2020-09-02 株式会社日立ハイテク 真空処理装置
KR102510306B1 (ko) 2020-04-21 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
CN114582693B (zh) * 2020-11-30 2025-03-11 中微半导体设备(上海)股份有限公司 等离子体处理装置及其末端执行器、边缘环及方法
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
JP7548671B2 (ja) * 2021-03-17 2024-09-10 東京エレクトロン株式会社 開閉装置及び搬送室
WO2022201409A1 (ja) 2021-03-25 2022-09-29 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12211674B2 (en) 2021-05-17 2025-01-28 Hitachi High-Tech Corporation Plasma processing apparatus

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JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
JP6960830B2 (ja) * 2017-11-17 2021-11-05 株式会社日立ハイテク 真空処理装置および真空処理装置の運転方法
JP7083463B2 (ja) * 2018-02-23 2022-06-13 株式会社日立ハイテク 真空処理装置

Also Published As

Publication number Publication date
CN108155082B (zh) 2020-05-19
KR20150089907A (ko) 2015-08-05
KR101774532B1 (ko) 2017-09-04
KR20170102163A (ko) 2017-09-07
TW201738991A (zh) 2017-11-01
TWI644382B (zh) 2018-12-11
CN104810305A (zh) 2015-07-29
JP2015141908A (ja) 2015-08-03
TW201530678A (zh) 2015-08-01
TWI600101B (zh) 2017-09-21
CN108155082A (zh) 2018-06-12
US11710619B2 (en) 2023-07-25
US20150214014A1 (en) 2015-07-30
KR101835438B1 (ko) 2018-03-08
CN104810305B (zh) 2018-01-30

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