TWI600101B - Vacuum processing equipment - Google Patents

Vacuum processing equipment Download PDF

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Publication number
TWI600101B
TWI600101B TW103127079A TW103127079A TWI600101B TW I600101 B TWI600101 B TW I600101B TW 103127079 A TW103127079 A TW 103127079A TW 103127079 A TW103127079 A TW 103127079A TW I600101 B TWI600101 B TW I600101B
Authority
TW
Taiwan
Prior art keywords
vacuum processing
sample stage
vacuum
processing apparatus
disposed
Prior art date
Application number
TW103127079A
Other languages
English (en)
Chinese (zh)
Other versions
TW201530678A (zh
Inventor
佐藤浩平
牧野昭孝
田中一海
属優作
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201530678A publication Critical patent/TW201530678A/zh
Application granted granted Critical
Publication of TWI600101B publication Critical patent/TWI600101B/zh

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H10P50/242—
    • H10P72/0421—
    • H10P72/0461—
    • H10P72/0462—
    • H10P72/70—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103127079A 2014-01-27 2014-08-07 Vacuum processing equipment TWI600101B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014012027A JP6293499B2 (ja) 2014-01-27 2014-01-27 真空処理装置

Publications (2)

Publication Number Publication Date
TW201530678A TW201530678A (zh) 2015-08-01
TWI600101B true TWI600101B (zh) 2017-09-21

Family

ID=53679672

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103127079A TWI600101B (zh) 2014-01-27 2014-08-07 Vacuum processing equipment
TW106122760A TWI644382B (zh) 2014-01-27 2014-08-07 真空處理裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106122760A TWI644382B (zh) 2014-01-27 2014-08-07 真空處理裝置

Country Status (5)

Country Link
US (1) US11710619B2 (enExample)
JP (1) JP6293499B2 (enExample)
KR (2) KR101774532B1 (enExample)
CN (2) CN108155082B (enExample)
TW (2) TWI600101B (enExample)

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* Cited by examiner, † Cited by third party
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US9293303B2 (en) * 2013-08-30 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Low contamination chamber for surface activation
JP6609425B2 (ja) * 2015-06-17 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6607795B2 (ja) 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
JP6960830B2 (ja) * 2017-11-17 2021-11-05 株式会社日立ハイテク 真空処理装置および真空処理装置の運転方法
CN111433390B (zh) * 2017-12-22 2022-09-27 株式会社村田制作所 成膜装置
JP7083463B2 (ja) 2018-02-23 2022-06-13 株式会社日立ハイテク 真空処理装置
KR102207755B1 (ko) * 2018-05-28 2021-01-26 주식회사 히타치하이테크 플라스마 처리 장치
CN109065432A (zh) * 2018-08-03 2018-12-21 德淮半导体有限公司 一种干法刻蚀设备
JP7296739B2 (ja) * 2019-01-31 2023-06-23 東京エレクトロン株式会社 処理装置及び処理装置の動作方法
JP6750928B2 (ja) * 2019-03-01 2020-09-02 株式会社日立ハイテク 真空処理装置
US20230154772A1 (en) * 2020-04-06 2023-05-18 Lam Research Corporation Slide and pivot assemblies for process module bias assemblies of substrate processing systems
WO2021214854A1 (ja) 2020-04-21 2021-10-28 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
CN114582693B (zh) * 2020-11-30 2025-03-11 中微半导体设备(上海)股份有限公司 等离子体处理装置及其末端执行器、边缘环及方法
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
JP7548671B2 (ja) * 2021-03-17 2024-09-10 東京エレクトロン株式会社 開閉装置及び搬送室
WO2022201409A1 (ja) 2021-03-25 2022-09-29 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
WO2022244041A1 (ja) 2021-05-17 2022-11-24 株式会社日立ハイテク プラズマ処理装置

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US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP2000133693A (ja) * 1998-08-19 2000-05-12 Shibaura Mechatronics Corp 真空装置用駆動機構および真空装置
JP3527450B2 (ja) * 1999-12-22 2004-05-17 東京エレクトロン株式会社 処理装置
US6719851B1 (en) * 2000-09-26 2004-04-13 Applied Materials, Inc. Lid assembly for opening a process chamber lid and uses therefor
US6669783B2 (en) 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
TW558789B (en) * 2002-05-02 2003-10-21 Hitachi High Tech Corp Semiconductor processing device and diagnostic method of semiconductor processing device
JP4300003B2 (ja) * 2002-08-07 2009-07-22 東京エレクトロン株式会社 載置台の駆動装置及びプローブ方法
JP4277100B2 (ja) * 2002-11-14 2009-06-10 東京エレクトロン株式会社 搬送機構の基準位置補正装置及び基準位置補正方法
JP4219702B2 (ja) * 2003-02-06 2009-02-04 東京エレクトロン株式会社 減圧処理装置
JP4522795B2 (ja) * 2003-09-04 2010-08-11 株式会社日立ハイテクノロジーズ 真空処理装置
JP4426343B2 (ja) 2004-03-08 2010-03-03 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2006080347A (ja) * 2004-09-10 2006-03-23 Hitachi High-Technologies Corp プラズマ処理装置
JP4432728B2 (ja) * 2004-10-29 2010-03-17 株式会社島津製作所 真空処理装置
KR100667598B1 (ko) * 2005-02-25 2007-01-12 주식회사 아이피에스 반도체 처리 장치
CN100358097C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺处理系统及其处理方法
JP4355314B2 (ja) * 2005-12-14 2009-10-28 東京エレクトロン株式会社 基板処理装置、及び該装置の蓋釣支装置
KR20080004118A (ko) * 2006-07-04 2008-01-09 피에스케이 주식회사 기판 처리 설비
JP2008311385A (ja) 2007-06-14 2008-12-25 Hitachi High-Technologies Corp 基板処理装置
US9328417B2 (en) 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
TWI408766B (zh) * 2009-11-12 2013-09-11 日立全球先端科技股份有限公司 Vacuum processing device
JP5564271B2 (ja) * 2010-01-20 2014-07-30 株式会社日立ハイテクノロジーズ 真空処理装置
KR101136728B1 (ko) * 2010-10-18 2012-04-20 주성엔지니어링(주) 기판처리장치와 그의 분해 및 조립방법
JP5785712B2 (ja) * 2010-12-28 2015-09-30 株式会社日立ハイテクノロジーズ 真空処理装置
US10023954B2 (en) * 2011-09-15 2018-07-17 Applied Materials, Inc. Slit valve apparatus, systems, and methods
US8895452B2 (en) * 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
JP6491891B2 (ja) * 2015-01-23 2019-03-27 株式会社日立ハイテクノロジーズ 真空処理装置
JP6609425B2 (ja) * 2015-06-17 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
JP6960830B2 (ja) * 2017-11-17 2021-11-05 株式会社日立ハイテク 真空処理装置および真空処理装置の運転方法
JP7083463B2 (ja) * 2018-02-23 2022-06-13 株式会社日立ハイテク 真空処理装置

Also Published As

Publication number Publication date
KR101835438B1 (ko) 2018-03-08
TW201738991A (zh) 2017-11-01
TW201530678A (zh) 2015-08-01
US20150214014A1 (en) 2015-07-30
JP2015141908A (ja) 2015-08-03
US11710619B2 (en) 2023-07-25
KR101774532B1 (ko) 2017-09-04
KR20170102163A (ko) 2017-09-07
JP6293499B2 (ja) 2018-03-14
CN104810305A (zh) 2015-07-29
TWI644382B (zh) 2018-12-11
KR20150089907A (ko) 2015-08-05
CN108155082A (zh) 2018-06-12
CN104810305B (zh) 2018-01-30
CN108155082B (zh) 2020-05-19

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