KR101774532B1 - 진공 처리 장치 - Google Patents

진공 처리 장치 Download PDF

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Publication number
KR101774532B1
KR101774532B1 KR1020140107805A KR20140107805A KR101774532B1 KR 101774532 B1 KR101774532 B1 KR 101774532B1 KR 1020140107805 A KR1020140107805 A KR 1020140107805A KR 20140107805 A KR20140107805 A KR 20140107805A KR 101774532 B1 KR101774532 B1 KR 101774532B1
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South Korea
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sample
vacuum processing
unit
vacuum
chamber
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Korean (ko)
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KR20150089907A (ko
Inventor
고헤이 사토
아키타카 마키노
가즈우미 다나카
유우사쿠 삿카
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020140107805A 2014-01-27 2014-08-19 진공 처리 장치 Active KR101774532B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014012027A JP6293499B2 (ja) 2014-01-27 2014-01-27 真空処理装置
JPJP-P-2014-012027 2014-01-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170109634A Division KR101835438B1 (ko) 2014-01-27 2017-08-29 진공 처리 장치

Publications (2)

Publication Number Publication Date
KR20150089907A KR20150089907A (ko) 2015-08-05
KR101774532B1 true KR101774532B1 (ko) 2017-09-04

Family

ID=53679672

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020140107805A Active KR101774532B1 (ko) 2014-01-27 2014-08-19 진공 처리 장치
KR1020170109634A Active KR101835438B1 (ko) 2014-01-27 2017-08-29 진공 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020170109634A Active KR101835438B1 (ko) 2014-01-27 2017-08-29 진공 처리 장치

Country Status (5)

Country Link
US (1) US11710619B2 (enExample)
JP (1) JP6293499B2 (enExample)
KR (2) KR101774532B1 (enExample)
CN (2) CN104810305B (enExample)
TW (2) TWI600101B (enExample)

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US9293303B2 (en) * 2013-08-30 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Low contamination chamber for surface activation
JP6609425B2 (ja) * 2015-06-17 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
JP6960737B2 (ja) 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
JP6960830B2 (ja) * 2017-11-17 2021-11-05 株式会社日立ハイテク 真空処理装置および真空処理装置の運転方法
WO2019124098A1 (ja) * 2017-12-22 2019-06-27 株式会社村田製作所 成膜装置
JP7083463B2 (ja) 2018-02-23 2022-06-13 株式会社日立ハイテク 真空処理装置
CN110770880B (zh) * 2018-05-28 2023-12-29 株式会社日立高新技术 等离子处理装置
CN109065432A (zh) * 2018-08-03 2018-12-21 德淮半导体有限公司 一种干法刻蚀设备
JP7296739B2 (ja) * 2019-01-31 2023-06-23 東京エレクトロン株式会社 処理装置及び処理装置の動作方法
JP6750928B2 (ja) * 2019-03-01 2020-09-02 株式会社日立ハイテク 真空処理装置
KR102510306B1 (ko) 2020-04-21 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN111705302B (zh) * 2020-08-18 2020-11-10 上海陛通半导体能源科技股份有限公司 可实现晶圆平稳升降的气相沉积设备
CN114582693B (zh) * 2020-11-30 2025-03-11 中微半导体设备(上海)股份有限公司 等离子体处理装置及其末端执行器、边缘环及方法
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
JP7548671B2 (ja) * 2021-03-17 2024-09-10 東京エレクトロン株式会社 開閉装置及び搬送室
CN115398603A (zh) 2021-03-25 2022-11-25 株式会社日立高新技术 等离子处理装置以及等离子处理方法
CN115643817B (zh) 2021-05-17 2025-11-11 株式会社日立高新技术 等离子体处理装置

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US20060099053A1 (en) * 2003-02-06 2006-05-11 Tokyo Electron Limited Vacuum treating device with lidded treatment container
US20130323860A1 (en) * 2012-05-31 2013-12-05 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber

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JP6960737B2 (ja) * 2017-01-23 2021-11-05 株式会社日立ハイテク 真空処理装置
JP6960830B2 (ja) * 2017-11-17 2021-11-05 株式会社日立ハイテク 真空処理装置および真空処理装置の運転方法
JP7083463B2 (ja) * 2018-02-23 2022-06-13 株式会社日立ハイテク 真空処理装置

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Publication number Priority date Publication date Assignee Title
US20060099053A1 (en) * 2003-02-06 2006-05-11 Tokyo Electron Limited Vacuum treating device with lidded treatment container
US20050193953A1 (en) * 2004-03-08 2005-09-08 Akitaka Makino Plasma processing apparatus
US20130323860A1 (en) * 2012-05-31 2013-12-05 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber

Also Published As

Publication number Publication date
US11710619B2 (en) 2023-07-25
TW201530678A (zh) 2015-08-01
TW201738991A (zh) 2017-11-01
CN108155082B (zh) 2020-05-19
CN104810305A (zh) 2015-07-29
CN108155082A (zh) 2018-06-12
KR20150089907A (ko) 2015-08-05
JP2015141908A (ja) 2015-08-03
TWI600101B (zh) 2017-09-21
KR101835438B1 (ko) 2018-03-08
US20150214014A1 (en) 2015-07-30
CN104810305B (zh) 2018-01-30
JP6293499B2 (ja) 2018-03-14
TWI644382B (zh) 2018-12-11
KR20170102163A (ko) 2017-09-07

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