JP6293157B2 - ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 - Google Patents
ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 Download PDFInfo
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- JP6293157B2 JP6293157B2 JP2015539716A JP2015539716A JP6293157B2 JP 6293157 B2 JP6293157 B2 JP 6293157B2 JP 2015539716 A JP2015539716 A JP 2015539716A JP 2015539716 A JP2015539716 A JP 2015539716A JP 6293157 B2 JP6293157 B2 JP 6293157B2
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- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261719133P | 2012-10-26 | 2012-10-26 | |
| US61/719,133 | 2012-10-26 | ||
| PCT/US2013/066165 WO2014066379A1 (en) | 2012-10-26 | 2013-10-22 | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018023304A Division JP6486519B2 (ja) | 2012-10-26 | 2018-02-13 | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016502754A JP2016502754A (ja) | 2016-01-28 |
| JP2016502754A5 JP2016502754A5 (enExample) | 2016-12-08 |
| JP6293157B2 true JP6293157B2 (ja) | 2018-03-14 |
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015539716A Active JP6293157B2 (ja) | 2012-10-26 | 2013-10-22 | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 |
| JP2018023304A Active JP6486519B2 (ja) | 2012-10-26 | 2018-02-13 | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018023304A Active JP6486519B2 (ja) | 2012-10-26 | 2018-02-13 | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US9166106B2 (enExample) |
| EP (1) | EP2912699B1 (enExample) |
| JP (2) | JP6293157B2 (enExample) |
| TW (1) | TW201428999A (enExample) |
| WO (1) | WO2014066379A1 (enExample) |
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| EP2912699B1 (en) | 2012-10-26 | 2019-12-18 | Glo Ab | Method for modifying selected portions of nanowire sized opto-electronic structure |
| KR101554032B1 (ko) * | 2013-01-29 | 2015-09-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| JP6205747B2 (ja) * | 2013-02-21 | 2017-10-04 | 富士通株式会社 | 光半導体素子及びその製造方法 |
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| FR3016081B1 (fr) * | 2013-12-27 | 2017-03-24 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit |
| KR102188497B1 (ko) * | 2014-03-27 | 2020-12-09 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
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| WO2014066371A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| EP2912699B1 (en) | 2012-10-26 | 2019-12-18 | Glo Ab | Method for modifying selected portions of nanowire sized opto-electronic structure |
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2013
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- 2013-10-22 US US14/059,950 patent/US9166106B2/en active Active
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- 2013-10-22 WO PCT/US2013/066165 patent/WO2014066379A1/en not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2014066379A1 (en) | 2014-05-01 |
| JP6486519B2 (ja) | 2019-03-20 |
| EP2912699B1 (en) | 2019-12-18 |
| EP2912699A1 (en) | 2015-09-02 |
| US20170301823A1 (en) | 2017-10-19 |
| EP2912699A4 (en) | 2016-07-27 |
| US9166106B2 (en) | 2015-10-20 |
| US20160099379A1 (en) | 2016-04-07 |
| TW201428999A (zh) | 2014-07-16 |
| US9722135B2 (en) | 2017-08-01 |
| JP2016502754A (ja) | 2016-01-28 |
| US10038115B2 (en) | 2018-07-31 |
| JP2018137439A (ja) | 2018-08-30 |
| US20140138620A1 (en) | 2014-05-22 |
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