FR3016081B1 - Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit - Google Patents

Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit

Info

Publication number
FR3016081B1
FR3016081B1 FR1363645A FR1363645A FR3016081B1 FR 3016081 B1 FR3016081 B1 FR 3016081B1 FR 1363645 A FR1363645 A FR 1363645A FR 1363645 A FR1363645 A FR 1363645A FR 3016081 B1 FR3016081 B1 FR 3016081B1
Authority
FR
France
Prior art keywords
emitting diodes
leakage current
optoelectronic device
current light
reduced leakage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1363645A
Other languages
English (en)
Other versions
FR3016081A1 (fr
Inventor
Anne-Laure Bavencove
Jerome Napierala
Walf Chikhaoui
Benoit Amstatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1363645A priority Critical patent/FR3016081B1/fr
Priority to PCT/EP2014/079266 priority patent/WO2015097260A1/fr
Publication of FR3016081A1 publication Critical patent/FR3016081A1/fr
Application granted granted Critical
Publication of FR3016081B1 publication Critical patent/FR3016081B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0033—Devices characterised by their operation having Schottky barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
FR1363645A 2013-12-27 2013-12-27 Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit Active FR3016081B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1363645A FR3016081B1 (fr) 2013-12-27 2013-12-27 Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit
PCT/EP2014/079266 WO2015097260A1 (fr) 2013-12-27 2014-12-23 Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1363645A FR3016081B1 (fr) 2013-12-27 2013-12-27 Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit

Publications (2)

Publication Number Publication Date
FR3016081A1 FR3016081A1 (fr) 2015-07-03
FR3016081B1 true FR3016081B1 (fr) 2017-03-24

Family

ID=50624713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1363645A Active FR3016081B1 (fr) 2013-12-27 2013-12-27 Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit

Country Status (2)

Country Link
FR (1) FR3016081B1 (fr)
WO (1) WO2015097260A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3137498A1 (fr) * 2022-06-30 2024-01-05 Aledia Dispositif optoélectronique et procédé de fabrication d’un tel dispositif

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040029301A (ko) * 2001-08-22 2004-04-06 소니 가부시끼 가이샤 질화물 반도체소자 및 질화물 반도체소자의 제조방법
DE102005061797B4 (de) * 2005-12-23 2020-07-09 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit Stromaufweitungsschicht und Verfahren zu dessen Herstellung
KR20100080094A (ko) * 2008-12-31 2010-07-08 삼성전자주식회사 방사형 이종접합 구조의 나노 막대를 이용한 발광 다이오드
US8872214B2 (en) * 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
JP5307100B2 (ja) * 2010-09-24 2013-10-02 日本電信電話株式会社 半導体発光素子
FR2983639B1 (fr) * 2011-12-01 2014-07-18 Commissariat Energie Atomique Dispositif optoelectronique comprenant des nanofils de structure coeur/coquille
FR2988904B1 (fr) * 2012-04-02 2015-01-16 Commissariat Energie Atomique Structure semiconductrice optoelectronique a nanofils et procede de fabrication d'une telle structure
US9166106B2 (en) * 2012-10-26 2015-10-20 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same

Also Published As

Publication number Publication date
FR3016081A1 (fr) 2015-07-03
WO2015097260A1 (fr) 2015-07-02

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