TW201428999A - 奈米線尺寸之光電結構及改質其經選定部分之方法 - Google Patents

奈米線尺寸之光電結構及改質其經選定部分之方法 Download PDF

Info

Publication number
TW201428999A
TW201428999A TW102138791A TW102138791A TW201428999A TW 201428999 A TW201428999 A TW 201428999A TW 102138791 A TW102138791 A TW 102138791A TW 102138791 A TW102138791 A TW 102138791A TW 201428999 A TW201428999 A TW 201428999A
Authority
TW
Taiwan
Prior art keywords
layer
nanowires
nanowire
conductivity
support
Prior art date
Application number
TW102138791A
Other languages
English (en)
Chinese (zh)
Inventor
Carl Patrik Theodor Svensson
Nathan Gardner
Original Assignee
Glo Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Glo Ab filed Critical Glo Ab
Publication of TW201428999A publication Critical patent/TW201428999A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Silicon Compounds (AREA)
TW102138791A 2012-10-26 2013-10-25 奈米線尺寸之光電結構及改質其經選定部分之方法 TW201428999A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261719133P 2012-10-26 2012-10-26
US14/059,950 US9166106B2 (en) 2012-10-26 2013-10-22 Nanowire sized opto-electronic structure and method for modifying selected portions of same

Publications (1)

Publication Number Publication Date
TW201428999A true TW201428999A (zh) 2014-07-16

Family

ID=50545186

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102138791A TW201428999A (zh) 2012-10-26 2013-10-25 奈米線尺寸之光電結構及改質其經選定部分之方法

Country Status (5)

Country Link
US (3) US9166106B2 (enExample)
EP (1) EP2912699B1 (enExample)
JP (2) JP6293157B2 (enExample)
TW (1) TW201428999A (enExample)
WO (1) WO2014066379A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667194B (zh) * 2017-06-21 2019-08-01 鴻海精密工業股份有限公司 奈米帶的製備方法
TWI668184B (zh) * 2017-06-21 2019-08-11 鴻海精密工業股份有限公司 奈米微結構的製備方法

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014066371A1 (en) 2012-10-26 2014-05-01 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
EP2912699B1 (en) 2012-10-26 2019-12-18 Glo Ab Method for modifying selected portions of nanowire sized opto-electronic structure
KR101554032B1 (ko) * 2013-01-29 2015-09-18 삼성전자주식회사 나노구조 반도체 발광소자
JP6205747B2 (ja) * 2013-02-21 2017-10-04 富士通株式会社 光半導体素子及びその製造方法
WO2014138904A1 (en) * 2013-03-14 2014-09-18 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
US10079331B2 (en) 2013-03-15 2018-09-18 Glo Ab High index dielectric film to increase extraction efficiency of nanowire LEDs
US9522821B2 (en) * 2013-04-18 2016-12-20 Bo Cui Method of fabricating nano-scale structures and nano-scale structures fabricated using the method
KR102075985B1 (ko) * 2013-10-14 2020-02-11 삼성전자주식회사 나노구조 반도체 발광소자
FR3016081B1 (fr) * 2013-12-27 2017-03-24 Aledia Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit
KR102188497B1 (ko) * 2014-03-27 2020-12-09 삼성전자주식회사 나노구조 반도체 발광소자
KR102188494B1 (ko) * 2014-07-21 2020-12-09 삼성전자주식회사 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법
EP3180806A4 (en) * 2014-08-12 2018-03-07 Glo Ab Iii-nitride nanowire led with strain modified surface active region and method of making thereof
KR102227771B1 (ko) 2014-08-25 2021-03-16 삼성전자주식회사 나노구조 반도체 발광소자
KR102337405B1 (ko) * 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
US9620559B2 (en) * 2014-09-26 2017-04-11 Glo Ab Monolithic image chip for near-to-eye display
FR3026564B1 (fr) * 2014-09-30 2018-02-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a elements semiconducteurs tridimensionnels
US10134591B2 (en) 2014-10-07 2018-11-20 Tandem Sun Ab Method for manufacturing a semiconductor device
DE102014117995A1 (de) * 2014-12-05 2016-06-09 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge zur Erzeugung von sichtbarem Licht und Leuchtdiode
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
DE102016102876A1 (de) * 2016-02-18 2017-08-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN207396531U (zh) 2017-01-31 2018-05-22 杭州探真纳米科技有限公司 一种悬臂末端纳米探针
US10840223B2 (en) * 2017-03-23 2020-11-17 Intel Corporation Augmented reality display systems with super-lambertian LED source
JP7007547B2 (ja) * 2017-04-11 2022-01-24 日亜化学工業株式会社 発光素子の製造方法
JP6947386B2 (ja) * 2017-06-29 2021-10-13 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
KR102520379B1 (ko) 2017-10-05 2023-04-10 헥사겜 아베 평면의 iii-n 반도체 층을 갖는 반도체 디바이스 및 제작 방법
CN113646894B (zh) 2018-08-24 2024-07-16 马修·哈滕斯维尔德 纳米线发光开关装置及其方法
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
JP7227463B2 (ja) 2018-12-27 2023-02-22 日亜化学工業株式会社 発光素子及びその製造方法
JP7176700B2 (ja) 2020-07-31 2022-11-22 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7655502B2 (ja) 2021-01-15 2025-04-02 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7136374B1 (ja) * 2022-01-12 2022-09-13 信越半導体株式会社 マイクロｌｅｄ構造体を有するウェーハ、マイクロｌｅｄ構造体を有するウェーハの製造方法およびマイクロｌｅｄ構造体を有する接合型半導体ウェーハの製造方法
KR20230114631A (ko) 2022-01-25 2023-08-01 삼성전자주식회사 나노 로드 발광 다이오드, 디스플레이 장치 및 제조 방법

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020049630A (ko) * 2000-12-19 2002-06-26 임지순 전계방출 에미터
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7132677B2 (en) 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
US7858996B2 (en) * 2006-02-17 2010-12-28 The Regents Of The University Of California Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices
WO2007022359A2 (en) * 2005-08-16 2007-02-22 The Regents Of The University Of California Vertical integrated silicon nanowire field effect transistors and methods of fabrication
US20070158661A1 (en) 2006-01-12 2007-07-12 Rutgers, The State University Of New Jersey ZnO nanostructure-based light emitting device
JP5483887B2 (ja) 2006-03-08 2014-05-07 クナノ アーベー Ｓｉ上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法
MX2008011275A (es) 2006-03-10 2008-11-25 Stc Unm Crecimiento pulsado de nanoalambres de gan y aplicaciones en materiales y dispositivos de substrato semiconductor de nitruros del grupo iii.
US7968359B2 (en) * 2006-03-10 2011-06-28 Stc.Unm Thin-walled structures
WO2008034823A1 (en) 2006-09-18 2008-03-27 Qunano Ab Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
WO2008140611A2 (en) 2006-12-18 2008-11-20 The Regents Of The University Of California Nanowire array-based light emitting diodes and lasers
EP2095426A4 (en) 2006-12-22 2012-10-10 Qunano Ab NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF
CN101669219B (zh) * 2006-12-22 2011-10-05 昆南诺股份有限公司 带有直立式纳米线结构的led及其制作方法
EP2102899B1 (en) 2007-01-12 2020-11-11 QuNano AB Nitride nanowires and method of producing such
KR101524319B1 (ko) 2007-01-12 2015-06-10 큐나노 에이비 시준 리플렉터를 갖는 나노구조 ｌｅｄ 어레이
WO2009009612A2 (en) * 2007-07-09 2009-01-15 Nanocrystal, Llc Growth of self-assembled gan nanowires and application in nitride semiconductor bulk material
JP2009147140A (ja) 2007-12-14 2009-07-02 Panasonic Corp 発光素子および発光素子の製造方法
US8030108B1 (en) * 2008-06-30 2011-10-04 Stc.Unm Epitaxial growth of in-plane nanowires and nanowire devices
EP2297794B1 (en) 2008-07-07 2017-09-06 Glo Ab Nanostructured light emitting diode
KR20100080094A (ko) * 2008-12-31 2010-07-08 삼성전자주식회사 방사형 이종접합 구조의 나노 막대를 이용한 발광 다이오드
EP2446467A4 (en) 2009-06-26 2014-07-02 California Inst Of Techn METHOD FOR PRODUCING PASSIVATED SILICON NANODRICES AND APPARATUS THUS OBTAINED THEREFOR
US20110079766A1 (en) 2009-10-01 2011-04-07 Isaac Harshman Wildeson Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate
US20110083728A1 (en) * 2009-10-14 2011-04-14 Palo Alto Research Center Incorporated Disordered Nanowire Solar Cell
JP5014403B2 (ja) * 2009-11-19 2012-08-29 シャープ株式会社 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置
US8872214B2 (en) 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
JP4814394B2 (ja) * 2010-03-05 2011-11-16 シャープ株式会社 発光装置の製造方法
KR101134493B1 (ko) 2010-03-19 2012-04-13 삼성엘이디 주식회사 발광 다이오드 및 이의 제조 방법
CN103098237A (zh) * 2010-06-18 2013-05-08 Glo公司 纳米线发光二极管结构及其制造方法
CA2802500A1 (en) 2010-06-24 2011-12-29 Glo Ab Substrate with buffer layer for oriented nanowire growth
KR101710159B1 (ko) 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
WO2012050888A2 (en) 2010-09-28 2012-04-19 North Carolina State University Gallium nitride based structures with embedded voids and methods for their fabrication
KR20120040550A (ko) * 2010-10-19 2012-04-27 삼성엘이디 주식회사 반도체 발광소자 및 그 제조방법
KR20120055390A (ko) * 2010-11-23 2012-05-31 삼성엘이디 주식회사 발광소자 및 그 제조방법
WO2012075461A1 (en) * 2010-12-02 2012-06-07 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices based on repetitive multiple step growth-etch sequence
US20120217474A1 (en) * 2011-02-25 2012-08-30 Agency For Science, Technology And Research Photonic device and method of making the same
TW201246599A (en) * 2011-05-06 2012-11-16 Nanocrystal Asia Inc Taiwan Semiconductor substrate and fabricating method thereof
DE112012003376T5 (de) 2011-08-16 2014-06-12 Brightedge Technologies, Inc. Seitenberichterstattung
US8350249B1 (en) 2011-09-26 2013-01-08 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
US9035278B2 (en) * 2011-09-26 2015-05-19 Glo Ab Coalesced nanowire structures with interstitial voids and method for manufacturing the same
CN104769732A (zh) * 2012-09-18 2015-07-08 Glo公司 纳米角锥体大小的光电子结构及其制造方法
WO2014066371A1 (en) 2012-10-26 2014-05-01 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
EP2912699B1 (en) 2012-10-26 2019-12-18 Glo Ab Method for modifying selected portions of nanowire sized opto-electronic structure
EP2912700A4 (en) 2012-10-26 2016-04-06 Glo Ab NANODRAHT LED STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667194B (zh) * 2017-06-21 2019-08-01 鴻海精密工業股份有限公司 奈米帶的製備方法
TWI668184B (zh) * 2017-06-21 2019-08-11 鴻海精密工業股份有限公司 奈米微結構的製備方法

Also Published As

Publication number Publication date
WO2014066379A1 (en) 2014-05-01
JP6486519B2 (ja) 2019-03-20
EP2912699B1 (en) 2019-12-18
EP2912699A1 (en) 2015-09-02
US20170301823A1 (en) 2017-10-19
EP2912699A4 (en) 2016-07-27
US9166106B2 (en) 2015-10-20
US20160099379A1 (en) 2016-04-07
JP6293157B2 (ja) 2018-03-14
US9722135B2 (en) 2017-08-01
JP2016502754A (ja) 2016-01-28
US10038115B2 (en) 2018-07-31
JP2018137439A (ja) 2018-08-30
US20140138620A1 (en) 2014-05-22

Similar Documents

Publication Publication Date Title
US10038115B2 (en) Nanowire sized opto-electronic structure and method for modifying selected portions of same
US8350249B1 (en) Coalesced nanowire structures with interstitial voids and method for manufacturing the same
US9799796B2 (en) Nanowire sized opto-electronic structure and method for modifying selected portions of same
TWI621278B (zh) 具有應變改質表面活性區域之第三族氮化物奈米線ｌｅｄ及其製造方法
US9570651B2 (en) Coalesced nanowire structures with interstitial voids and method for manufacturing the same
JP2015532014A (ja) ナノピラミッドサイズ光電構造及びそれを製造するための方法
TW201515091A (zh) 藉由乾式蝕刻移除３ｄ半導體結構之方法
TW201515269A (zh) 用於平整化及界定奈米線裝置之活化區的絕緣層
TWI636952B (zh) 使用介電膜以減少奈米線發光二極體中之透明導電氧化物之電阻率
TW201513212A (zh) 於平面層中在蝕刻３ｄ結構後停止蝕刻之方法
WO2014143991A1 (en) Nanowire led structure with decreased leakage and method of making same
TW201511334A (zh) 具有經減低漏電之奈米線發光二極體結構及其製造方法