JP6281958B2 - カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ - Google Patents

カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ Download PDF

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Publication number
JP6281958B2
JP6281958B2 JP2015539628A JP2015539628A JP6281958B2 JP 6281958 B2 JP6281958 B2 JP 6281958B2 JP 2015539628 A JP2015539628 A JP 2015539628A JP 2015539628 A JP2015539628 A JP 2015539628A JP 6281958 B2 JP6281958 B2 JP 6281958B2
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gas
process gas
substrate
injection device
adjustable
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Japanese (ja)
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JP2015534283A (ja
JP2015534283A5 (enExample
Inventor
シュー−クワン ラウ，
シュー−クワン ラウ，
チョーポン ツォン，
チョーポン ツォン，
メフメト トゥールル サミール，
メフメト トゥールル サミール，
ジーユエン イェー，
ジーユエン イェー，
デーヴィッド ケー． カールソン，
デーヴィッド ケー． カールソン，
シュエピン リー，
シュエピン リー，
エロール アントニオ シー． サンチェス，
エロール アントニオ シー． サンチェス，
スワミナタン スリニバサン，
スワミナタン スリニバサン，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2015539628A 2012-10-26 2013-10-08 カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ Active JP6281958B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261719009P 2012-10-26 2012-10-26
US61/719,009 2012-10-26
US14/047,047 2013-10-07
US14/047,047 US20140137801A1 (en) 2012-10-26 2013-10-07 Epitaxial chamber with customizable flow injection
PCT/US2013/063899 WO2014066033A1 (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Publications (3)

Publication Number Publication Date
JP2015534283A JP2015534283A (ja) 2015-11-26
JP2015534283A5 JP2015534283A5 (enExample) 2016-12-01
JP6281958B2 true JP6281958B2 (ja) 2018-02-21

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JP2015539628A Active JP6281958B2 (ja) 2012-10-26 2013-10-08 カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ

Country Status (7)

Country Link
US (2) US20140137801A1 (enExample)
JP (1) JP6281958B2 (enExample)
KR (1) KR102135229B1 (enExample)
CN (1) CN104756231B (enExample)
SG (2) SG11201502761RA (enExample)
TW (1) TWI628729B (enExample)
WO (1) WO2014066033A1 (enExample)

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US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
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JP7159986B2 (ja) * 2019-06-27 2022-10-25 株式会社Sumco エピタキシャル成長装置およびエピタキシャルウェーハの製造方法
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN111455458B (zh) * 2019-09-18 2021-11-16 北京北方华创微电子装备有限公司 外延装置及应用于外延装置的进气结构
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Also Published As

Publication number Publication date
SG11201502761RA (en) 2015-06-29
SG10201703437WA (en) 2017-05-30
US20140137801A1 (en) 2014-05-22
KR102135229B1 (ko) 2020-07-17
TWI628729B (zh) 2018-07-01
JP2015534283A (ja) 2015-11-26
KR20150074165A (ko) 2015-07-01
CN104756231A (zh) 2015-07-01
CN104756231B (zh) 2020-08-28
TW201419438A (zh) 2014-05-16
US20180209043A1 (en) 2018-07-26
WO2014066033A1 (en) 2014-05-01

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