SG10201703437WA - Epitaxial chamber with customizable flow injection - Google Patents

Epitaxial chamber with customizable flow injection

Info

Publication number
SG10201703437WA
SG10201703437WA SG10201703437WA SG10201703437WA SG10201703437WA SG 10201703437W A SG10201703437W A SG 10201703437WA SG 10201703437W A SG10201703437W A SG 10201703437WA SG 10201703437W A SG10201703437W A SG 10201703437WA SG 10201703437W A SG10201703437W A SG 10201703437WA
Authority
SG
Singapore
Prior art keywords
flow injection
epitaxial chamber
customizable flow
customizable
epitaxial
Prior art date
Application number
SG10201703437WA
Inventor
Shu-Kwan Lau
Zhepeng Cong
Mehmet Tugrul Samir
Zhiyuan Ye
David K Carlson
Xuebin Li
Errol Antonio C Sanchez
Swaminathan Srinivasan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201703437WA publication Critical patent/SG10201703437WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
SG10201703437WA 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection SG10201703437WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261719009P 2012-10-26 2012-10-26
US14/047,047 US20140137801A1 (en) 2012-10-26 2013-10-07 Epitaxial chamber with customizable flow injection

Publications (1)

Publication Number Publication Date
SG10201703437WA true SG10201703437WA (en) 2017-05-30

Family

ID=50545102

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201502761RA SG11201502761RA (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection
SG10201703437WA SG10201703437WA (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201502761RA SG11201502761RA (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Country Status (7)

Country Link
US (2) US20140137801A1 (en)
JP (1) JP6281958B2 (en)
KR (1) KR102135229B1 (en)
CN (1) CN104756231B (en)
SG (2) SG11201502761RA (en)
TW (1) TWI628729B (en)
WO (1) WO2014066033A1 (en)

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US10344380B2 (en) 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
JP6542245B2 (en) * 2014-02-14 2019-07-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Upper dome with injection assembly
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
JP6629248B2 (en) * 2014-06-20 2020-01-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Gas injection device for epitaxial chamber
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
US10760161B2 (en) * 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
JP6402058B2 (en) * 2015-03-23 2018-10-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing apparatus, semiconductor device manufacturing method, and program
KR20180008907A (en) * 2015-06-12 2018-01-24 어플라이드 머티어리얼스, 인코포레이티드 Injector for semiconductor epitaxial growth
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US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (en) * 2016-04-28 2023-07-18 应用材料公司 Improved side injection nozzle design for process chambers
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US20180033659A1 (en) * 2016-07-28 2018-02-01 Applied Materials, Inc. Gas purge system and method for outgassing control
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
WO2018154823A1 (en) 2017-02-23 2018-08-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing device, method of manufacturing semiconductor device, and program
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US11077410B2 (en) * 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
DE102018120580A1 (en) * 2018-08-23 2020-02-27 Infineon Technologies Ag DEVICE AND METHOD FOR DEPOSITING A LAYER AT ATMOSPHERIC PRESSURE
WO2020046567A1 (en) * 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
JP6902060B2 (en) 2019-02-13 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, semiconductor equipment manufacturing methods, and programs
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN111455458B (en) * 2019-09-18 2021-11-16 北京北方华创微电子装备有限公司 Epitaxial device and air inlet structure applied to epitaxial device
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US20220364261A1 (en) * 2021-05-11 2022-11-17 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications

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Also Published As

Publication number Publication date
CN104756231B (en) 2020-08-28
US20140137801A1 (en) 2014-05-22
KR102135229B1 (en) 2020-07-17
CN104756231A (en) 2015-07-01
JP6281958B2 (en) 2018-02-21
JP2015534283A (en) 2015-11-26
WO2014066033A1 (en) 2014-05-01
TWI628729B (en) 2018-07-01
TW201419438A (en) 2014-05-16
US20180209043A1 (en) 2018-07-26
SG11201502761RA (en) 2015-06-29
KR20150074165A (en) 2015-07-01

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