TWI775073B - Method and apparatus for light curing - Google Patents

Abstract

Embodiments of the present disclosure provide a method for light curing. The method includes placing a semiconductor wafer into a chamber. The method also includes projecting a light over the semiconductor wafer. The method further includes supplying gas into the chamber via a number of gas discharging inlets with different width. In addition, the method includes evacuating the gas from the chamber through a number of gas exhausting outlets. The number of the gas exhausting outlets is greater than the number of the gas discharging inlets. The method further include removing the semiconductor wafer from the chamber.

Description

Method and equipment for light curing

Some embodiments of the present disclosure relate to a semiconductor processing apparatus and a method for processing semiconductors, and more particularly, to a photocuring apparatus and a photocuring method for semiconductor wafers.

As semiconductor technology advances, there is an increasing demand for semiconductor components with higher performance and lower cost. To meet these demands, the semiconductor industry continues to impose stringent requirements on device manufacturing yield and reliability. These requirements drive the need to further optimize the design and architecture of semiconductor device manufacturing systems.

Some embodiments of the present disclosure provide a light curing device. The light curing device includes a cavity. The light curing apparatus also includes a wafer holder located in the cavity. The photocuring apparatus also includes a gas guide within the cavity and configured to provide a gas flow over the wafer holder. The gas guiding device has a first side and a second side. And, the gas guiding device includes: a first air inlet and a second air inlet, arranged on the first side of the gas guiding device, The width of the first air inlet is smaller than the width of the second air inlet; and a plurality of air inlets are arranged on the second side surface of the gas guiding device. In addition, the light curing apparatus includes a gas supply source, which is fluidly connected to the first air inlet and the second air inlet. The light curing equipment further includes a gas discharge device, which is fluidly connected to the gas suction port.

Some embodiments of the present disclosure also provide a light curing device. The light curing device includes a cavity. The light curing apparatus also includes a wafer holder located in the cavity. The photocuring apparatus also includes a gas guide within the cavity and configured to provide a gas flow over the wafer holder. The gas guiding device has a first side and a second side. And, the gas guiding device includes: a plurality of air inlets, arranged on the first side of the gas guiding device; and a plurality of air intakes, arranged on the second side of the gas guiding device, wherein the number of the air inlets is larger than that of the air intake number of mouths. In addition, the photo-curing apparatus includes a gas supply source fluidly connected to the gas inlet. The light curing equipment further includes a gas discharge device, which is fluidly connected to the gas suction port.

Some embodiments of the present disclosure also provide a photocuring method. The method includes providing a semiconductor wafer into a cavity. The method also includes illuminating the semiconductor wafer with a light source. The method also includes supplying a gas into the cavity with a plurality of air inlets of non-width. Additionally, the method includes removing gas from the cavity via a plurality of exhaust ports, wherein the number of exhaust ports is greater than the number of air intake ports. The method further includes removing the semiconductor wafer from the cavity.

50: Semiconductor Wafers

100: Light curing equipment

110: Cavity

116: Wafer holder

117: Heater

118: Spindle

120: Wafer channel

130: light source

132: UV light unit

133: Reflector

140: Light penetrating element

150: Gas System

152: Gas supply source

153: Intake pipe

154: Gas discharge device

155: exhaust pipe

160: Gas guiding device

161: The first side

1611: First End

1612: Second End

162: Second side

1621: First End

1622: Second End

163: First gas channel

164: Second gas channel

165: air inlet

166: exhaust hole

160a: Gas guiding devices

161a: First side

160b: Gas guiding devices

161b: first side

160c: Gas guiding device

161c: first side

160d: Gas guiding device

162d: second side

1621d: First End

1622d: second end

160e: Gas guiding device

162e: second side

160f: Gas guiding device

162f: second side

1621f: first end

1622f: second end

160g: Gas guiding device

162g: second side

160h: Gas guiding device

162h: Second side

1621h: first end

1622h: second end

171: The first air inlet (air inlet)

172: Second air inlet (air inlet)

173: The third air intake (air intake)

171a: First Air Inlet

172a: Second air inlet

173a: Third air intake

171b: First Air Inlet

172b: Second air inlet

173b: 3rd air intake

171c: First air intake

172c: Second air intake

173c: Third air intake

180: exhaust port

180d: exhaust port

180e: exhaust port

180f: exhaust port

180g: exhaust port

180h: exhaust port

90: Axis

C: Center

D: Circumferential direction

A1: Included angle

A2: Included angle

S10: Method

S11: Operation

S12: Operation

S13: Operation

S14: Operation

S15: Operation

P1: Distance

P2: Distance

W1: width

W2: width

W3: width

W4: width

W5: width

W6: width

Aspects of the present disclosure may be better understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with industry standard practice, various special Signs are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

FIG. 1 shows a schematic diagram of a light curing apparatus according to some embodiments of the present disclosure.

FIG. 2 shows a top view of a light curing apparatus according to some embodiments of the present disclosure.

FIG. 3 shows a side view of an air inlet of a gas guiding device according to some embodiments of the present disclosure.

FIG. 4 shows a side view of a gas inlet of a gas guiding device according to some embodiments of the present disclosure.

FIG. 5 shows a flowchart of a photocuring method according to some embodiments of the present disclosure.

FIG. 6 shows a flow field simulation diagram of a light curing apparatus using some embodiments of the present disclosure.

FIG. 7A shows a side view of an air inlet of a gas guiding device according to some embodiments of the present disclosure.

FIG. 7B shows a side view of an air inlet of a gas guiding device according to some embodiments of the present disclosure.

FIG. 7C shows a side view of an air inlet of a gas guiding device according to some embodiments of the present disclosure.

FIG. 8A shows a side view of a gas extraction port of a gas guiding device according to some embodiments of the present disclosure.

FIG. 8B shows a side view of a gas extraction port of a gas guiding device according to some embodiments of the present disclosure.

FIG. 8C shows a side view of a gas extraction port of a gas guiding device according to some embodiments of the present disclosure.

FIG. 8D shows a side view of a gas extraction port of a gas guiding device according to some embodiments of the present disclosure.

FIG. 8E shows a side view of a gas extraction port of a gas guiding device according to some embodiments of the present disclosure.

The following disclosure provides many different embodiments or examples for implementing different features of the present disclosure, and the following disclosure of this specification describes specific examples of various components and their arrangements in order to simplify the description of the invention. Of course, these specific examples are not intended to limit the present disclosure. For example, if the following disclosure of this specification describes that a first feature is formed on or over a second feature, it means that it includes an embodiment in which the first feature and the second feature are formed in direct contact with each other. , and also includes embodiments in which additional features may be formed between the first and second features, so that the first and second features may not be in direct contact. In addition, repeated reference symbols and/or words may be used in different examples in the description of the present disclosure. These repeated symbols or words are used for the purpose of simplicity and clarity, and are not used to limit the relationship between the various embodiments and/or the appearance structures.

Furthermore, for convenience in describing the relationship of one element or feature to another (plural) element or (plural) feature in the drawings, spatially relative terms such as "under", "under", "lower", "above", "Top" and similar terms, etc. It will be understood that, in addition to the orientation depicted in the figures, spatially relative terms encompass different orientations of the device in use or operation. The device may also be otherwise oriented (eg, rotated 90 degrees or at other orientations) and the description of the spatially relative terms used interpreted accordingly. It will be appreciated that additional operational steps may be provided before, during, and after the described method, and that certain operational steps described may be replaced or omitted in certain method embodiments.

It should be noted that the embodiments discussed herein may not necessarily recite every component or feature that may be present within a structure. For example, one or more components may be omitted from the drawings, eg, when the discussion of a component may sufficiently convey aspects of the embodiments, it may be omitted from the drawings. Furthermore, the method embodiments discussed herein may be discussed in a particular order of execution, while in other method embodiments, they may be performed in any reasonable order.

The fabrication of semiconductor devices includes many processes and technologies, and the UV curing process is one of them. For the UV curing process, the wafer can be placed in a UV curing device for UV curing. During the curing process, the wafers are heated in the chamber of the UV curing equipment. Some substances in the wafer are released and distributed in the chamber, and a gas flow generating device can be placed in the chamber to remove these substances by generating a gas flow. Some embodiments of the present disclosure provide a photo-curing apparatus including a gas guide device with an optimized airflow field design, thereby improving the smoothness of airflow through a cavity, reducing wafer contamination and enhancing airflow removal efficiency.

FIG. 1 shows a light curing apparatus according to some embodiments of the present disclosure Schematic of 100. FIG. 2 shows a top view of a photocuring apparatus 100 according to some embodiments of the present disclosure. In the cavity 110 of the light curing apparatus 100 , a light irradiation processing space is defined in the cavity 110 . In some embodiments, the cavity 110 includes a wafer channel 120 . The wafer channel 120 is connected to the sidewall of the cavity 110 for the semiconductor wafers 50 to enter or exit the cavity 110 . In some embodiments, the movement of the semiconductor wafer 50 relative to the chamber 110 may be performed via an automated material handling system (AMHS). The automated material handling system may load unprocessed semiconductor wafers 50 into the chamber 110 through the same path as unloaded processed semiconductor wafers 50 from the chamber 110 . Optionally, the path for loading unprocessed semiconductor wafers 50 into cavity 110 is different from the path for unloading processed semiconductor wafers 50 from cavity 110 .

According to some embodiments, semiconductor wafer 50 is made of silicon, germanium, or other semiconductor materials. According to some embodiments, the semiconductor wafer 50 is made of a compound semiconductor, such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). According to some embodiments, the semiconductor wafer 50 is made of an alloy semiconductor, such as silicon germanium (SiGe), silicon germanium carbon (SiGeC), gallium arsenide phosphide (GaAsP), or gallium indium phosphide (GaInP). According to some embodiments, the semiconductor wafer 50 includes a crystalline film layer. For example, the semiconductor wafer 50 has a crystalline film layer covering a bulk semiconductor. According to some embodiments, the semiconductor wafer 50 may be a silicon-on-insulator (SOI) or germanium-on-insulator (GOI) substrate.

A plurality of device elements may be included on the semiconductor wafer 50 . for example In other words, the device elements formed on the semiconductor wafer 50 may include a transistor, such as metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductor transistors ( CMOS) transistors), bipolar junction transistors (BJT), high voltage transistors, high frequency transistors, p-channel and/or n-channel field-effect transistors transistors (PFET)) or n-channel field-effect transistors (NFET), etc., as well as other components. The various device components on the semiconductor wafer 50 have undergone various processing processes, such as deposition, Etching, ion implantation, photolithography, annealing, and or other processes. In some embodiments, a thin film of a dielectric material is deposited on the surface of semiconductor wafer 50 to be cured. For example, the A low-k film may be deposited on the surface by any suitable means, including CVD (chemical vapor deposition) or spin coating.

According to some embodiments of the present disclosure, the light curing apparatus 100 includes a wafer holder 116 disposed above the bottom of the cavity 110 . The wafer holder 116 has a generally circular turntable configured and constructed to support the semiconductor wafer 50 . The wafer holder 116 may hold the semiconductor wafer 50 on the wafer holder 116 by using electrostatic charges, mechanical clamps, vacuum clamps, or gravity.

In some embodiments, wafer holder 116 includes a ceramic material. The wafer holder 116 is connected to a lift mechanism (not shown) through a shaft 118 . shaft 118 can lower the wafer holder 116 to the transfer position to allow the semiconductor wafer 50 to enter the cavity 110 to be placed on the wafer holder 116 . The shaft 118 can lift the wafer holder 116 to a predetermined processing position. The shaft 118 is connected to a rotating mechanism (not shown). The wafer holder 116 is rotatable by the rotating shaft 118, so that the semiconductor wafers 50 on the wafer holder 116 are uniformly exposed to the radiation light.

The wafer holder 116 also includes a heater 117 so that the wafer holder 116 and the semiconductor wafer 50 thereon can be heated to a predetermined temperature during the photocuring process. However, it is to be understood that the technique for heating the semiconductor wafer 50 is not limited to the use of the heater 117, but can also be achieved by applying optical techniques (tungsten lamps, laser), thermal radiation techniques, or by using a susceptor and radio frequency (RF) induction The heating can heat the semiconductor wafer 50 on the wafer holder 116 .

According to some embodiments of the present disclosure, the light curing apparatus 100 further includes a light source 130 . The light source 130 includes an ultraviolet light unit 132 for emitting ultraviolet light wavelength radiation. The ultraviolet light unit 132 includes a plurality of ultraviolet light units 132 arranged in an array. The radiation source 130 may include an array. The semiconductor wafer 50 is positioned in the optical line of sight of the UV light unit 132 within the cavity 110 to receive UV light radiation for film curing. By irradiating extreme ultraviolet wavelength radiation, the thin film formed on the semiconductor wafer 50 can thus be cured and its composition optimized.

The light source 130 may use any suitable type of ultraviolet light unit 132 or light source, including but not limited to mercury and excimer lamps, mercury microwave arc lamps, pulsed xenon flash lamps, ultraviolet light emitting diode lamps. In some embodiments, the UV light unit 132 is an elongated tube-type UV light, which are spaced apart and parallel to each other. can be used to power the lamp by any suitable A sufficient amount of power supplies power to the ultraviolet light unit 132 . The UV light unit 132 can be selected to generate UV radiation having any suitable wavelength required by the processing requirements. For example, but not limited to, the range of wavelengths of ultraviolet radiation used may be between about 193 nm to 500 nm.

In some embodiments, the light source 130 further includes one or more reflectors, and the reflectors 133 are used to guide and enhance the ultraviolet light wavelength radiation irradiated on the semiconductor wafer 50 . The reflector 133 may be placed in any suitable configuration to enhance reflection of ultraviolet light wavelength radiation. The reflector 133 may be made of any suitable coated or uncoated metal with a reflective surface finish or coating operable to reflect ultraviolet light wavelength radiation. In an embodiment, the reflector 133 may be made of aluminum or an aluminum alloy, and the surface of the reflector 133 is processed by a surface treatment process, such as by an aluminum anodizing process. In the aluminum anodization process, aluminum oxide grows equally down into the surface and out of the surface. The anodized aluminum layer is grown by passing a direct current through the electrolytic solution using an aluminum object, ie, the reflector 133 serves as an anode (positive electrode). The electric current releases hydrogen gas at the cathode (negative electrode) and oxygen gas at the surface of the reflector 133, which is an aluminum anode, thereby creating a buildup of aluminum oxide. Alternating current and pulsed current are also possible, but are rarely used. The voltages required for various solutions ranged from 1 to 300V DC, although most fell within the 15 to 21V range. Thicker coatings formed in sulfuric and organic acids generally require higher voltages. Anodizing current varies with the area of aluminum being anodized and typically ranges from 30 to 300 amps per square meter (2.8 to 28 amps per square foot).

According to some embodiments of the present disclosure, the light curing apparatus 100 further includes A light penetrating element 140 . The light penetrating element 140 separates the cavity 110 and the light source 130 . Accordingly, the light transmissive element 140 is placed and positioned over the semiconductor wafer 50 to operatively enclose the cavity 110 from the outside environment and the UV light unit 132 . The light penetrating element 140 prevents the exhaust gas of the semiconductor wafer 50 from reaching and contaminating the ultraviolet lamp unit 132 . Light transmissive element 140 is a transparent plate and operates to allow ultraviolet light wavelength radiation of UV light unit 132 to project and pass through light transmissive element 140 and to illuminate semiconductor wafer 50 placed below light transmissive element 140 . In some embodiments, the light transmissive element 140 may be made of synthetic quartz. In some embodiments, the light transmissive elements 140 in the existing light curing apparatus 100 are of sufficient size to accommodate all of the lamp array areas.

According to some embodiments of the present disclosure, the light curing apparatus 100 further includes a gas system 150 . The gas system 150 includes a gas supply source 152 , a gas discharge device 154 and a gas guide device 160 . The gas supply source 152 supplies the gas to the cavity 110 through the gas inlet pipe 153 and the gas guiding device 160 . And, the gas is discharged from the cavity 110 through the gas guide device 160 and the exhaust pipe 155 . In some embodiments, the exhaust line 155 is connected to a vacuum source (not shown) within the gas exhaust device 154, wherein the chamber 110 operates at sub-atmospheric pressure. In various embodiments, by operating the gas exhaust device 154, the chamber 110 may be maintained under vacuum, atmosphere, or positive pressure.

The gas may be a cooling gas used to maintain the temperature in the cavity 110 at a desired level, which may be below 450°C in some representative non-limiting embodiments. The gas is also used as a purge gas to help remove various organic compounds or other species expelled from the semiconductor wafer 50 or cavity 110 during the photocuring process. In some embodiments, the gas is nitrogen ( _N2 ), helium (He), argon (Ar); however, other suitable inert or noble gases may be used.

Referring to FIG. 2 , in some embodiments, the gas guiding device 160 has an annular structure and has a first side surface 161 and a second side surface 162 . In an example, the first side surface 161 extends in the circumferential direction D of the gas guiding device 160 and has an included angle A1 with respect to the center of the gas guiding device 160 . The angle of the included angle A1 may be between 120 degrees and 170 degrees. The second side 162 is opposite to the first side 161 . The second side surface 162 extends in the circumferential direction D of the gas guiding device 160 and has an included angle A2 with respect to the center C of the gas guiding device 160 . The angle of the included angle A2 may be between 120 degrees and 170 degrees. In one embodiment, an axis 90 passes through the first side surface 161 and the second side surface 162 . The axis 90 may pass through the substantial center of the first side 161 and the second side 162 . In one embodiment, the axis 90 also passes through the center C of the gas guide 160 . In one embodiment, the extending directions of the first side surface 161 and the second side surface 162 are perpendicular to the plane for supporting the semiconductor wafer (ie, the supporting surface of the wafer holder 116 ).

In one embodiment, a first gas channel 163 and a second gas channel 164 are formed in the gas guide device 160 . The first gas channel 163 is adjacent to the first side surface 161 and extends inside the gas guiding device 160 along the circumferential direction D of the gas guiding device 160 . Two gas inlet holes 165 are formed on the top surface 1601 of the gas guide device 160 and communicate with the first gas passage 163 . In one embodiment, the two air inlet holes 165 are paired with respect to the axis 90 called settings. The gas from the intake pipe 153 (FIG. 1) enters the inside of the first gas passage 163 through the two intake holes 165.

The second gas channel 164 extends inside the gas guiding device 160 adjacent to the second side surface 162 and along the circumferential direction D of the gas guiding device 160 . A suction hole 166 is formed on the bottom surface of the gas guide device 160 and communicated with the second gas passage 164 . In one embodiment, the extension length of the second gas channel 164 in the circumferential direction D is greater than the extension length of the second side surface 162 in the circumferential direction D, and the air suction holes 166 are located between the first end 1621 of the second side surface 162 and the first end 1621 of the second side surface 162 . between the ends 1641 of the two gas passages 164 .

A plurality of air inlets (for example: two first air inlets 171 , two second air inlets 172 and two third air inlets 173 ) are formed on the first side surface 161 of the gas guide device 160 and are in fluid communication in the first gas channel 163 . The two first air inlets 171 , the two second air inlets 172 and the two third air inlets 173 are arranged on the axis of symmetry 90 . Specifically, as shown in FIG. 3 , the two first air inlets 171 are disposed on opposite sides of the axis 90 . And, along the direction away from the axis 90, one of the two first air inlets 171, one of the two second air inlets 172 and one of the two third air inlets 173 are spaced apart from each other and arranged in sequence.

Referring to FIG. 3 , the width W1 of the first air inlet 171 is smaller than the width W2 of the second air inlet 172 , and the width W2 of the second air inlet 172 is smaller than the width W3 of the third air inlet 173 . In one embodiment, the width ratio between two adjacent air inlets is between about 0.80 and about 0.85. In one embodiment, the ratio of the width W3 to the width W2 is about 0.83, and the ratio of the width W2 to the width W1 is about 0.83. This disclosure is not limited to this, In other embodiments, the ratio of width W3 to width W2 is different from the ratio of width W2 to width W1. In a specific embodiment, the width W1 is about 58.69 mm, the width W2 is about 48.97 mm, and the width W3 is about 41.54 mm. In one embodiment, the first air inlet 171 , the second air inlet 172 and the third air inlet 173 are spaced at an equal distance P1 from each other. In addition, the first air inlets 171 located on both sides of the axis 90 are also spaced by the same distance P1. In a specific embodiment, the distance P1 is about 15.52 mm.

In one embodiment, the two third air inlets 173 are respectively disposed at both ends of the first side surface 161 . That is, the edges of the two third air inlets 173 away from the axis 90 are the first ends 1611 or the second ends 1612 of the first side surface 161 . The included angle between the edges of the two third air inlets 173 away from the axis 90 with respect to the center C is also the same as the included angle A1 shown in FIG. 2 (FIG. 2).

Referring to FIG. 2 , a plurality of suction ports 180 are formed on the second side surface 162 of the gas guide device 160 and are in fluid communication with the second gas channel 164 . Specifically, as shown in FIG. 4 , the second side surface 162 of the gas guiding device 160 has nine air intake ports 180 . One of the nine air intake ports 180 is disposed above the axis 90 . There are four air suction ports 180 on two opposite sides of the axis 90 respectively.

Referring to FIG. 4, in one embodiment, the nine air inlets 180 have the same width. In other embodiments, some of the nine air extraction ports 180 have different widths than other air extraction ports 180 . For example, in one embodiment, the air inlets 180 located on the axis 90 have a first width W4, the air inlets 180 closest to both sides of the axis 90 have a second width W5, and the remaining air inlets 180 have a third width W6. third wide The degree W6 is greater than the second width W5, and the second width W5 is greater than the first width W4. In one embodiment, the first width is about 32 mm, the second width W5 is about 33 mm, and the third width W6 is about 34 mm. In one embodiment, the nine air suction ports 180 are spaced at equal distances P2 from each other. In a specific embodiment, the distance P2 is about 9.5 mm.

In one embodiment, the two air inlets 180 farthest from the axis 90 are respectively disposed at both ends of the second side surface 162 . That is, the edges of the two air suction ports 180 away from the axis 90 are the first end 1621 of the second side surface 162 , that is, the second end 1622 . The included angle between the edges of the two air inlets 180 away from the axis 90 with respect to the center C is also the same as the included angle A2 shown in FIG. 2 ( FIG. 2 ).

The two first air inlets 171 , the two second air inlets 172 , the two third air inlets 173 and the air exhaust port 180 can be small holes with flat openings, so the two first air inlets 171 , The air flow generated by the two second air inlets 172 , the two third air inlets 173 and the air suction port 180 can be laminar flow, which can form a relatively uniform air flow in the cavity 110 .

In some embodiments, the gas guide 160 is formed in one piece. In a specific embodiment, the gas guiding device 160 may include an upper annular structure and a lower annular structure. After the upper annular structure and the lower annular structure are formed separately, they are directly combined by welding so that there is no relative displacement between the two. In this way, the displacement of the annular structure on the wall and the lower annular structure due to the difference in thermal stress can be prevented, thereby preventing the debris generated by the relative friction between the upper annular structure and the lower annular structure from falling into the cavity. 110 , while contaminating the semiconductor wafer 50 .

In one embodiment, the gas guiding device 160 is made of a low thermal expansion coefficient material. The thermal expansion coefficient of the low thermal expansion coefficient material is about 1×10 ^-6 /°C to 1×10 ^-5 /°C. For example, the low thermal expansion coefficient material can be ceramic, and the ceramic material can be aluminum oxide (Al ₂ O ₃ ) (the thermal expansion coefficient of which is about 8×10 ⁻⁶ /°C), silicon carbide (SiC) (the thermal expansion coefficient of which is about 8×10 −6 /° C.) is about 4.1×10 ^-6 /°C), zirconium dioxide (ZrO ₂ ) (its thermal expansion coefficient is about 9.5×10 ^-6 /°C), silicon oxide (Si ₃ O ₄ ) (its thermal expansion coefficient is about 2.0×10 ^-6 /℃~4.1× ^10-6 /℃) or any combination of the above. It should be noted that the above-mentioned materials of the low thermal expansion coefficient material are only examples and are not intended to limit the present disclosure. Those skilled in the art to which the present disclosure pertains can select appropriate low thermal expansion coefficient materials according to actual needs. In this embodiment, the ceramic has not only a low coefficient of thermal expansion, but also a low coefficient of friction. Therefore, even in the photo-curing process, the gas guiding device 160 may generate friction with respect to the side wall of the cavity 110 , and the friction is too small to prevent the gap between the gas guiding device 160 and the side wall of the cavity 110 . produce particles. In this way, wafer contamination can be avoided.

FIG. 5 shows a flowchart of a photocuring method S10 according to some embodiments of the present disclosure. It will be appreciated that additional operations may be provided before, during and after the operations shown in FIG. 5 . For other embodiments of the method, some of the operations described below may be replaced or reduced. The sequence of operations/procedures may be interchangeable. The following embodiments may employ the materials, configurations, and dimensions described with respect to the above-described embodiments, and detailed descriptions thereof may be omitted.

The method S10 includes operation S11, providing the semiconductor wafer 50 to in the cavity 110 . In some embodiments, the semiconductor wafer 50 is moved into the wafer holder 116 in the cavity 110 by a robot arm (not shown). After the semiconductor wafer 50 is placed on the wafer holder 116 , the robot arm is removed from the cavity 110 .

The method S10 further includes operation S12, irradiating the semiconductor wafer 50 with a light source. The light source 130 may generate ultraviolet radiation of any suitable wavelength required by the processing requirements. For example, but not limited to, the range of wavelengths of ultraviolet radiation used may be between about 193 nm and 500 nm.

The method S10 further includes operation S13 , supplying gas into the cavity 110 with air inlets of unequal widths. In one embodiment, the light curing apparatus 100 is directed to the interior of the cavity 110 through the two first air inlets 171 , the two second air inlets 172 and the two third air inlets 173 on the gas guiding device 160 . Exhaust gas. The gas exhausted into the cavity 110 may be a cooling gas for maintaining the temperature in the cavity 110 at a desired level. Alternatively, the gas vented into the cavity 110 may be used as a purge gas to help remove various organic compounds or other species expelled from the semiconductor wafer 50 or the cavity 110 during the photocuring process. In some embodiments, the gas is nitrogen (N ₂ ), helium (He), and argon (Ar); however, the present disclosure is not limited thereto, and other suitable inert or rare gases may be used.

The method S10 further includes operation S14 , removing the gas in the cavity 110 through the air extraction port 180 . In one embodiment, the light curing apparatus 100 exhausts the gas in the cavity 110 from the cavity 1110 through the nine air suction ports 180 on the gas guiding device 160 . The substances discharged from the cavity 110 through the air suction port 180 include the two first air inlets 171 and the two second air inlets 172 In addition to the gas supplied to the cavity by the two third air inlets 173 , the gas also includes the gas discharged from the semiconductor wafer 50 during the photo-curing process and the contamination particles that may contaminate the semiconductor wafer 50 .

In one embodiment, since the air suction holes 166 (FIG. 2) are located between the first end 1621 of the second side surface 162 and the end 1641 of the second gas passage 164, the gas flow rate through each air suction port 180 is not the same . In an exemplary embodiment, the flow of gas through the exhaust port 180 decreases in a direction away from the exhaust hole 166 . The gas flow rate through the suction port 180 near the first end 1621 of the second side 162 is about 20.38% of the overall flow, and the gas flow rate through the suction port 180 near the second end 1622 of the second side 162 is about 4.24% of the overall flow .

The method S10 further includes an operation S15 of removing the semiconductor wafer 50 from the cavity 110 . In some embodiments, the semiconductor wafer 50 is photocured in the cavity 110 for a predetermined time. After the predetermined time expires, the photocuring apparatus 100 ends the execution of operations S13 and S14, and uses a robotic arm ( Not shown) removing the semiconductor wafer 50 from the cavity 110 . The semiconductor wafer 50 removed from the cavity 110 can be transferred to another semiconductor processing machine for additional processing, such as a photolithography process, an etching process, and the like.

FIG. 6 shows a flow field simulation diagram of a light curing apparatus using some embodiments of the present disclosure. In the flow field simulation diagram in Fig. 6, the airflow on both sides of the axis 90 is uniformly distributed (air field symmetry). In addition, eddy currents occurring at the edge of the semiconductor wafer are minimized, and the gas flow moves generally parallel to axis 90 without uneven flow due to the offset of suction holes 166 (FIG. 2) from axis 90. Thus, substances discharged from the semiconductor wafer (for example, from A porogen can be efficiently expelled out of the cavity 110 . On the other hand, since the air flow uniformly passes through the surface of the semiconductor wafer 50 , the contamination particles generated in the cavity 110 are not easily deposited on the surface of the semiconductor wafer 50 , and the production yield of the semiconductor wafer 50 is further improved.

Although the present disclosure has been disclosed above in embodiments, it is not intended to limit the present disclosure. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. For example, the position and number of the air inlet and the air outlet of the gas guiding device can be adjusted, and various possible implementations are exemplified below.

FIGS. 7A, 7B, and 7C show schematic views of the air inlets of the gas guiding device according to some embodiments of the present disclosure. In the 7A embodiment, the first side surface 161a of the gas guiding device 160a has two first air inlets 171a, two second air inlets 172a and two third air inlets 173a. Along the direction away from the axis 90, one of the two first air inlets 171a, one of the two second air inlets 172a and one of the two third air inlets 173a are arranged in sequence. The width of the first air inlet 171a is larger than the width of the second air inlet 172a, and the width of the second air inlet 172a is larger than the width of the third air inlet 173a. In one embodiment, the first air inlet 171a, the second air inlet 172a and the third air inlet 173a are equally spaced from each other. In addition, the first air inlets 171a located on both sides of the axis 90 are also spaced by the same distance.

In the 7B embodiment, the first side surface 161b of the gas guiding device 160b has a first air inlet 171b, two second air inlets 172b and two third air inlets 173b. The first air inlet 171b is disposed relative to the axis 90, and along the direction away from the axis 90, two second air inlets One of the air inlets 172b and one of the two third air inlets 173b are arranged in sequence. The width of the first air inlet 171b is larger than the width of the second air inlet 172b, the width of the third air inlet 173b is larger than that of the second air inlet 172b, and the width of the first air inlet 171b is larger than that of the third air inlet The width of the mouth 173b. In one embodiment, the first air inlet 171b, the second air inlet 172b and the third air inlet 173b are equally spaced from each other.

In the 7C embodiment, the first side surface 161c of the gas guiding device 160c has a first air inlet 171c, two second air inlets 172c and two third air inlets 173c. The first air inlet 171c is disposed relative to the axis 90, and along the direction away from the axis 90, one of the two second air inlets 172c and one of the two third air inlets 173c are arranged in sequence. The width of the first air inlet 171c is larger than that of the second air inlet 172c, and the width of the second air inlet 172c is larger than that of the third air inlet 173c. In one embodiment, the first air inlet 171c, the second air inlet 172c and the third air inlet 173c are equally spaced from each other.

Figures 8A, 8B, 8C, 8D, and 8E show schematic views of the air inlets of the gas guiding device according to some embodiments of the present disclosure. In the 8A embodiment, the second side surface 162d of the gas guide 160d has nine air extraction ports 180d. The nine air suction ports 180d may have the same width, but the air suction ports 180d are arranged at unequal distances from each other. Specifically, in one embodiment, the second side surface 162d extends along the circumferential direction D from the first end 1621d to the second end 1622d. The air suction ports 180d are also arranged along the circumferential direction D. As shown in FIG. The distance between the two adjacent air extraction ports 180d near the first end 1621d is greater than the distance between the two adjacent air extraction ports 180d away from the first end 1621d spacing. In one embodiment, the first end 1621d is disposed adjacent to the air extraction hole 166 (FIG. 2).

In the 8Bth embodiment, the second side surface 162e of the gas guiding device 160e has six suction ports 180e. The six air suction ports 180e may have the same width, and the air suction ports 180e are disposed at equal distances from each other.

In the 8C-th embodiment, the second side surface 162f of the gas guide 160f has six air extraction ports 180f. The six air suction ports 180f may have the same width, but the air suction ports 180f are arranged at unequal distances from each other. Specifically, in one embodiment, the second side surface 162f extends along the circumferential direction D from the first end 1621f to the second end 1622f. The air suction ports 180f are also arranged along the circumferential direction D. As shown in FIG. The distance between the two adjacent air intake ports 180f near the first end 1621f is greater than the distance between the two adjacent air intake ports 180f away from the first end 1621f. In one embodiment, the first end 1621f is disposed adjacent to the air extraction hole 166 (FIG. 2).

In the 8D embodiment, the second side surface 162g of the gas guide 160g has three air extraction ports 180g. The three suction ports 180g may have the same width, and the suction ports 180g may be arranged at equal distances from each other.

In the 8E embodiment, the second side 162h of the gas guide 160h has three air intakes 180h. The three air extraction ports 180h may have the same width, but the air extraction ports 180h are arranged at unequal distances from each other. Specifically, in one embodiment, the second side surface 162h extends along the circumferential direction D from the first end 1621h to the second end 1622h. air outlet 180h are also arranged along the circumferential direction D. The distance between the two adjacent air intake ports 180h near the first end 1621h is greater than the distance between the two adjacent air intake ports 180h away from the first end 1621h. In one embodiment, the first end 1621h is disposed adjacent to the air extraction hole 166 (FIG. 2).

In some embodiments of the present disclosure, the gas is supplied into the cavity where the photocuring process is performed through the gas guiding device that can provide a symmetrical gas flow, so that the gas can pass over the wafer holder for carrying the semiconductor wafer stably and uniformly, so that the gas is stably and uniformly passed from the semiconductor wafer. The gas released from the circle can be efficiently discharged from the cavity, and the probability of contaminating particles contaminating the semiconductor wafer can also be reduced.

Some embodiments of the present disclosure provide a light curing device. The light curing device includes a cavity. The light curing apparatus also includes a wafer holder located in the cavity. The photocuring apparatus also includes a gas guide within the cavity and configured to provide a gas flow over the wafer holder. The gas guiding device has a first side and a second side. And, the gas guiding device includes: a first air inlet and a second air inlet, arranged on the first side of the gas guiding device, the width of the first air inlet is smaller than the width of the second air inlet; and A plurality of air suction ports are arranged on the second side surface of the gas guiding device. In addition, the light curing apparatus includes a gas supply source, which is fluidly connected to the first air inlet and the second air inlet. The light curing equipment further includes a gas discharge device, which is fluidly connected to the gas suction port. In the above embodiment, the gas guiding device includes two first air inlets and two second air inlets, and the two first air inlets and the two second air inlets are respectively arranged symmetrically with respect to an axis. In the above embodiment, the light curing device further includes two third air inlets, the two third air inlets are arranged on the first side of the gas guide device and are symmetrically arranged relative to the axis, wherein the two first air inlets air port One, one of the two second air inlets and one of the two third air inlets are sequentially arranged in a direction away from the axis. In the above embodiment, the widths of the two third air inlets are smaller than the widths of the two second air inlets. In the above embodiment, the number of air suction ports is nine.

Some embodiments of the present disclosure also provide a light curing device. The light curing device includes a cavity. The light curing apparatus also includes a wafer holder located in the cavity. The photocuring apparatus also includes a gas guide within the cavity and configured to provide a gas flow over the wafer holder. The gas guiding device has a first side and a second side. And, the gas guiding device comprises: a plurality of air inlets, arranged on the first side of the gas guiding device; and a plurality of air intakes, arranged on the second side of the gas guiding device, wherein the number of the air inlets is larger than that of the air intake number of mouths. In addition, the photo-curing apparatus includes a gas supply source fluidly connected to the gas inlet. The light curing equipment further includes a gas discharge device, which is fluidly connected to the gas suction port. In the above embodiment, the number of air intake ports is six, and the number of air intake ports is nine. In the above-mentioned embodiment, an axis passes through the first side surface and the second side surface, and the air inlet and the air intake port are respectively arranged symmetrically with respect to the axis on the first side surface and the second side surface.

Some embodiments of the present disclosure also provide a photocuring method. The method includes providing a semiconductor wafer into a cavity. The method also includes illuminating the semiconductor wafer with a light source. The method also includes supplying a gas into the cavity with a plurality of air inlets of non-width. Additionally, the method includes removing gas from the cavity via a plurality of exhaust ports, wherein the number of exhaust ports is greater than the number of air intake ports. The method further includes removing the semiconductor wafer from the cavity. In the above embodiment, the number of air intake ports is six, and the number of air intake ports is nine.

The foregoing outlines features or examples of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that the present disclosure may be readily used as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments or examples described herein. Those skilled in the art should also realize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions and alterations herein can be made without departing from the spirit and scope of the present disclosure .

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Claims (10)

A light curing device suitable for processing a semiconductor wafer, comprising: a cavity; a wafer holder located in the cavity; a gas guide device located in the cavity and configured to provide a gas flow through the wafer Above the seat, wherein the gas guiding device has a first side surface and a second side surface, and the gas guiding device includes: a first air inlet and a second air inlet, arranged on the gas guiding device On the first side, the width of the first air inlet is smaller than the width of the second air inlet; and a plurality of air inlets are arranged on the second side of the gas guide device; a gas supply source is fluidly connected to the the first air inlet and the second air inlet; and a gas discharge device, fluidly connected to the air inlets. The light curing apparatus of claim 1, wherein the gas guiding device comprises two first air inlets and two second air inlets, the two first air inlets and the two second air inlets The ports are respectively arranged symmetrically with respect to an axis. The light curing device as claimed in claim 2, further comprising two third air inlets, the two third air inlets are arranged on the first side surface of the gas guiding device, and are arranged symmetrically with respect to the axis, where the two first One of the air inlets, one of the two second air inlets and one of the two third air inlets are arranged in sequence along a direction away from the axis. The light curing device according to claim 1, wherein the widths of the two third air inlets are smaller than the widths of the two second air inlets. The light curing device according to claim 1, wherein the number of the air extraction ports is nine. A light curing device suitable for processing a semiconductor wafer, comprising: a cavity; a wafer holder located in the cavity; a gas guide device located in the cavity and configured to provide a gas flow through the wafer Above the seat, wherein the gas guiding device has a first side and a second side, and the gas guiding device includes: a plurality of air inlets arranged on the first side of the gas guiding device; and a plurality of air intakes, arranged on the second side of the gas guiding device, wherein the number of the air intakes is greater than the number of the air intakes; a gas supply source, fluidly connected to the air intakes; and a gas discharge device, a fluid Connect these exhaust ports. The light curing device as claimed in claim 6, wherein the The number of air ports is six, and the number of the air intake ports is nine. The light curing device as claimed in claim 6, wherein an axis passes through the first side surface and the second side surface, and the air inlets and the air extraction ports are respectively symmetrically arranged on the first side surface and the second side surface with respect to the axis. on the second side. A light curing method, comprising: providing a semiconductor wafer into a cavity; irradiating the semiconductor wafer with a light source; supplying a gas into the cavity through a plurality of air inlets of unequal width; A gas port removes the gas in the cavity, wherein the number of the air inlets is greater than the number of the air inlets; and the semiconductor wafer is removed from the cavity. The light curing method according to claim 9, wherein the number of the air inlets is six, and the number of the air extraction ports is nine.

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