SG11201502761RA - Epitaxial chamber with customizable flow injection - Google Patents
Epitaxial chamber with customizable flow injectionInfo
- Publication number
- SG11201502761RA SG11201502761RA SG11201502761RA SG11201502761RA SG11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA
- Authority
- SG
- Singapore
- Prior art keywords
- flow injection
- epitaxial chamber
- customizable flow
- customizable
- epitaxial
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261719009P | 2012-10-26 | 2012-10-26 | |
US14/047,047 US20140137801A1 (en) | 2012-10-26 | 2013-10-07 | Epitaxial chamber with customizable flow injection |
PCT/US2013/063899 WO2014066033A1 (en) | 2012-10-26 | 2013-10-08 | Epitaxial chamber with customizable flow injection |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201502761RA true SG11201502761RA (en) | 2015-06-29 |
Family
ID=50545102
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201502761RA SG11201502761RA (en) | 2012-10-26 | 2013-10-08 | Epitaxial chamber with customizable flow injection |
SG10201703437WA SG10201703437WA (en) | 2012-10-26 | 2013-10-08 | Epitaxial chamber with customizable flow injection |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703437WA SG10201703437WA (en) | 2012-10-26 | 2013-10-08 | Epitaxial chamber with customizable flow injection |
Country Status (7)
Country | Link |
---|---|
US (2) | US20140137801A1 (en) |
JP (1) | JP6281958B2 (en) |
KR (1) | KR102135229B1 (en) |
CN (1) | CN104756231B (en) |
SG (2) | SG11201502761RA (en) |
TW (1) | TWI628729B (en) |
WO (1) | WO2014066033A1 (en) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
US9499905B2 (en) * | 2011-07-22 | 2016-11-22 | Applied Materials, Inc. | Methods and apparatus for the deposition of materials on a substrate |
US9840778B2 (en) * | 2012-06-01 | 2017-12-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma chamber having an upper electrode having controllable valves and a method of using the same |
US10344380B2 (en) | 2013-02-11 | 2019-07-09 | Globalwafers Co., Ltd. | Liner assemblies for substrate processing systems |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
JP6542245B2 (en) * | 2014-02-14 | 2019-07-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Upper dome with injection assembly |
WO2015195256A1 (en) * | 2014-06-18 | 2015-12-23 | Applied Materials, Inc. | One-piece injector assembly |
JP6629248B2 (en) * | 2014-06-20 | 2020-01-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Gas injection device for epitaxial chamber |
US11060203B2 (en) * | 2014-09-05 | 2021-07-13 | Applied Materials, Inc. | Liner for epi chamber |
US10760161B2 (en) * | 2014-09-05 | 2020-09-01 | Applied Materials, Inc. | Inject insert for EPI chamber |
JP6402058B2 (en) * | 2015-03-23 | 2018-10-10 | 株式会社Kokusai Electric | Substrate processing apparatus, semiconductor device manufacturing method, and program |
KR20180008907A (en) * | 2015-06-12 | 2018-01-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Injector for semiconductor epitaxial growth |
KR102350588B1 (en) | 2015-07-07 | 2022-01-14 | 삼성전자 주식회사 | Film forming apparatus having injector |
US10260149B2 (en) * | 2016-04-28 | 2019-04-16 | Applied Materials, Inc. | Side inject nozzle design for processing chamber |
CN107403717B (en) * | 2016-04-28 | 2023-07-18 | 应用材料公司 | Improved side injection nozzle design for process chambers |
DE102016211614A1 (en) * | 2016-06-28 | 2017-12-28 | Siltronic Ag | Method and apparatus for producing coated semiconductor wafers |
US20180033659A1 (en) * | 2016-07-28 | 2018-02-01 | Applied Materials, Inc. | Gas purge system and method for outgassing control |
US10752991B2 (en) * | 2017-02-06 | 2020-08-25 | Applied Materials, Inc. | Half-angle nozzle |
WO2018154823A1 (en) | 2017-02-23 | 2018-08-30 | 株式会社Kokusai Electric | Substrate processing device, method of manufacturing semiconductor device, and program |
US11469079B2 (en) * | 2017-03-14 | 2022-10-11 | Lam Research Corporation | Ultrahigh selective nitride etch to form FinFET devices |
US11077410B2 (en) * | 2017-10-09 | 2021-08-03 | Applied Materials, Inc. | Gas injector with baffle |
DE102018120580A1 (en) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | DEVICE AND METHOD FOR DEPOSITING A LAYER AT ATMOSPHERIC PRESSURE |
WO2020046567A1 (en) * | 2018-08-29 | 2020-03-05 | Applied Materials, Inc. | Chamber injector |
JP6902060B2 (en) | 2019-02-13 | 2021-07-14 | 株式会社Kokusai Electric | Substrate processing equipment, semiconductor equipment manufacturing methods, and programs |
US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
CN111455458B (en) * | 2019-09-18 | 2021-11-16 | 北京北方华创微电子装备有限公司 | Epitaxial device and air inlet structure applied to epitaxial device |
DE102020103946A1 (en) | 2020-02-14 | 2021-08-19 | AIXTRON Ltd. | Gas inlet device for a CVD reactor |
TWI775073B (en) * | 2020-05-07 | 2022-08-21 | 台灣積體電路製造股份有限公司 | Method and apparatus for light curing |
EP4074861A1 (en) | 2021-04-13 | 2022-10-19 | Siltronic AG | Method for manufacturing semiconductor wafers having an epitaxial layer deposited from the gas phase in a deposition chamber |
US20220364261A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Chamber architecture for epitaxial deposition and advanced epitaxial film applications |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2653633B1 (en) * | 1989-10-19 | 1991-12-20 | Commissariat Energie Atomique | CHEMICAL TREATMENT DEVICE ASSISTED BY A DIFFUSION PLASMA. |
US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
TW356554B (en) * | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
JP3517808B2 (en) * | 1996-07-17 | 2004-04-12 | 日本酸素株式会社 | Vapor phase growth method and apparatus |
JP4381489B2 (en) * | 1997-06-24 | 2009-12-09 | ソニー株式会社 | Chemical vapor deposition equipment |
US6291800B1 (en) * | 1998-02-20 | 2001-09-18 | Tokyo Electron Limited | Heat treatment apparatus and substrate processing system |
JP3203225B2 (en) * | 1998-02-23 | 2001-08-27 | 東京エレクトロン株式会社 | Heat treatment equipment |
JP2000331939A (en) * | 1999-05-17 | 2000-11-30 | Applied Materials Inc | Film-forming device |
US6656831B1 (en) * | 2000-01-26 | 2003-12-02 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of a metal nitride layer |
KR100571731B1 (en) * | 2000-11-11 | 2006-04-17 | 할도르 토프쉐 에이/에스 | Improved Hydroprocesssing Process and Method of Retrofitting Existing Hydroprocessing Reactors |
US7098131B2 (en) * | 2001-07-19 | 2006-08-29 | Samsung Electronics Co., Ltd. | Methods for forming atomic layers and thin films including tantalum nitride and devices including the same |
US20070137794A1 (en) * | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
KR100578136B1 (en) * | 2004-01-27 | 2006-05-10 | 삼성전자주식회사 | Plasma enhanced semiconductor deposition apparatus |
TW200729300A (en) * | 2005-11-30 | 2007-08-01 | Nuflare Technology Inc | Film-forming method and film-forming equipment |
CA2677857A1 (en) * | 2007-04-24 | 2008-11-06 | Linde North America, Inc. | Flash processing of asphaltic residual oil |
JP2010040541A (en) * | 2008-07-31 | 2010-02-18 | Sumco Corp | Epitaxial growth apparatus |
US20100108263A1 (en) * | 2008-10-30 | 2010-05-06 | Applied Materials, Inc. | Extended chamber liner for improved mean time between cleanings of process chambers |
JP5268766B2 (en) * | 2009-04-23 | 2013-08-21 | Sumco Techxiv株式会社 | Film forming reaction apparatus and film forming substrate manufacturing method |
JP2010263112A (en) * | 2009-05-08 | 2010-11-18 | Sumco Corp | Epitaxial growth device and method for manufacturing silicon epitaxial wafer |
US9127360B2 (en) * | 2009-10-05 | 2015-09-08 | Applied Materials, Inc. | Epitaxial chamber with cross flow |
-
2013
- 2013-10-07 US US14/047,047 patent/US20140137801A1/en not_active Abandoned
- 2013-10-08 WO PCT/US2013/063899 patent/WO2014066033A1/en active Application Filing
- 2013-10-08 KR KR1020157013605A patent/KR102135229B1/en active IP Right Grant
- 2013-10-08 JP JP2015539628A patent/JP6281958B2/en active Active
- 2013-10-08 SG SG11201502761RA patent/SG11201502761RA/en unknown
- 2013-10-08 SG SG10201703437WA patent/SG10201703437WA/en unknown
- 2013-10-08 CN CN201380055524.4A patent/CN104756231B/en active Active
- 2013-10-09 TW TW102136586A patent/TWI628729B/en active
-
2018
- 2018-03-22 US US15/928,622 patent/US20180209043A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN104756231B (en) | 2020-08-28 |
US20140137801A1 (en) | 2014-05-22 |
KR102135229B1 (en) | 2020-07-17 |
CN104756231A (en) | 2015-07-01 |
JP6281958B2 (en) | 2018-02-21 |
JP2015534283A (en) | 2015-11-26 |
WO2014066033A1 (en) | 2014-05-01 |
SG10201703437WA (en) | 2017-05-30 |
TWI628729B (en) | 2018-07-01 |
TW201419438A (en) | 2014-05-16 |
US20180209043A1 (en) | 2018-07-26 |
KR20150074165A (en) | 2015-07-01 |
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