CN104756231B - 具有可定制的流动注入的外延腔室 - Google Patents

具有可定制的流动注入的外延腔室 Download PDF

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Publication number
CN104756231B
CN104756231B CN201380055524.4A CN201380055524A CN104756231B CN 104756231 B CN104756231 B CN 104756231B CN 201380055524 A CN201380055524 A CN 201380055524A CN 104756231 B CN104756231 B CN 104756231B
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China
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substrate
injector
process gas
outlets
gas
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Chinese (zh)
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CN104756231A (zh
Inventor
刘树坤
哲鹏·丛
穆罕默德·图格鲁利·萨米尔
叶祉渊
戴维·K·卡尔森
李学斌
埃罗尔·安东尼奥·C·桑切斯
斯瓦米纳坦·斯里尼瓦桑
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN201380055524.4A 2012-10-26 2013-10-08 具有可定制的流动注入的外延腔室 Active CN104756231B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261719009P 2012-10-26 2012-10-26
US61/719,009 2012-10-26
US14/047,047 2013-10-07
US14/047,047 US20140137801A1 (en) 2012-10-26 2013-10-07 Epitaxial chamber with customizable flow injection
PCT/US2013/063899 WO2014066033A1 (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Publications (2)

Publication Number Publication Date
CN104756231A CN104756231A (zh) 2015-07-01
CN104756231B true CN104756231B (zh) 2020-08-28

Family

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Family Applications (1)

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CN201380055524.4A Active CN104756231B (zh) 2012-10-26 2013-10-08 具有可定制的流动注入的外延腔室

Country Status (7)

Country Link
US (2) US20140137801A1 (enExample)
JP (1) JP6281958B2 (enExample)
KR (1) KR102135229B1 (enExample)
CN (1) CN104756231B (enExample)
SG (2) SG11201502761RA (enExample)
TW (1) TWI628729B (enExample)
WO (1) WO2014066033A1 (enExample)

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US9840778B2 (en) 2012-06-01 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma chamber having an upper electrode having controllable valves and a method of using the same
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
WO2015123022A1 (en) * 2014-02-14 2015-08-20 Applied Materials, Inc. Upper dome with injection assembly
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
KR20170020472A (ko) * 2014-06-20 2017-02-22 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 챔버로의 가스 주입을 위한 장치
US10760161B2 (en) * 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
JP6402058B2 (ja) * 2015-03-23 2018-10-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
US20160362813A1 (en) * 2015-06-12 2016-12-15 Applied Materials, Inc. Injector for semiconductor epitaxy growth
KR102350588B1 (ko) 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
KR20180128515A (ko) * 2016-04-25 2018-12-03 어플라이드 머티어리얼스, 인코포레이티드 자기-조립 단분자층 프로세스들을 위한 화학물질 전달 챔버
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
CN107403717B (zh) * 2016-04-28 2023-07-18 应用材料公司 一种用于处理腔室的改进侧注入喷嘴设计
DE102016211614A1 (de) 2016-06-28 2017-12-28 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von beschichteten Halbleiterscheiben
US20180033659A1 (en) * 2016-07-28 2018-02-01 Applied Materials, Inc. Gas purge system and method for outgassing control
US10752991B2 (en) 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
CN117810127A (zh) 2017-02-23 2024-04-02 株式会社国际电气 基板处理装置、半导体装置的制造方法、基板处理方法、容器及存储介质
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US11077410B2 (en) * 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
WO2020046567A1 (en) * 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
JP6902060B2 (ja) 2019-02-13 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、およびプログラム
JP7159986B2 (ja) * 2019-06-27 2022-10-25 株式会社Sumco エピタキシャル成長装置およびエピタキシャルウェーハの製造方法
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN111455458B (zh) * 2019-09-18 2021-11-16 北京北方华创微电子装备有限公司 外延装置及应用于外延装置的进气结构
DE102020103946A1 (de) 2020-02-14 2021-08-19 AIXTRON Ltd. Gaseinlasseinrichtung für einen CVD-Reaktor
TWI775073B (zh) * 2020-05-07 2022-08-21 台灣積體電路製造股份有限公司 光固化的方法及其設備
EP4074861A1 (de) 2021-04-13 2022-10-19 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit aus der gasphase abgeschiedener epitaktischer schicht in einer abscheidekammer
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
US12060651B2 (en) * 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
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EP4337814A4 (en) * 2021-05-11 2025-10-08 Applied Materials Inc GAS INJECTOR FOR EPITAXY AND CHEMICAL VAPOR DEPOSITION CHAMBER
KR20240093998A (ko) * 2021-11-03 2024-06-24 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버를 위한 주입 모듈
US20240141493A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Single piece or two piece susceptor
DE102023107111A1 (de) * 2022-12-09 2024-06-20 Aixtron Se Vorrichtung zum Abscheiden von SiC-Schichten auf einem Substrat mit einem verstellbaren Gasaustrittselement
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CN120641602A (zh) * 2022-12-30 2025-09-12 环球晶圆股份有限公司 加工外延半导体晶片的方法
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CN1648282A (zh) * 2004-01-27 2005-08-03 三星电子株式会社 等离子体增强的半导体淀积设备

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US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
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Also Published As

Publication number Publication date
SG11201502761RA (en) 2015-06-29
JP6281958B2 (ja) 2018-02-21
SG10201703437WA (en) 2017-05-30
US20140137801A1 (en) 2014-05-22
KR102135229B1 (ko) 2020-07-17
TWI628729B (zh) 2018-07-01
JP2015534283A (ja) 2015-11-26
KR20150074165A (ko) 2015-07-01
CN104756231A (zh) 2015-07-01
TW201419438A (zh) 2014-05-16
US20180209043A1 (en) 2018-07-26
WO2014066033A1 (en) 2014-05-01

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