SG11201502761RA - Epitaxial chamber with customizable flow injection - Google Patents

Epitaxial chamber with customizable flow injection

Info

Publication number
SG11201502761RA
SG11201502761RA SG11201502761RA SG11201502761RA SG11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA SG 11201502761R A SG11201502761R A SG 11201502761RA
Authority
SG
Singapore
Prior art keywords
flow injection
epitaxial chamber
customizable flow
customizable
epitaxial
Prior art date
Application number
SG11201502761RA
Other languages
English (en)
Inventor
Shu-Kwan Lau
Zhepeng Cong
Mehmet Tugrul Samir
Zhiyuan Ye
David K Carlson
Xuebin Li
Errol Antonio C Sanchez
Swaminathan Srinivasan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201502761RA publication Critical patent/SG11201502761RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
SG11201502761RA 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection SG11201502761RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261719009P 2012-10-26 2012-10-26
US14/047,047 US20140137801A1 (en) 2012-10-26 2013-10-07 Epitaxial chamber with customizable flow injection
PCT/US2013/063899 WO2014066033A1 (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Publications (1)

Publication Number Publication Date
SG11201502761RA true SG11201502761RA (en) 2015-06-29

Family

ID=50545102

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201703437WA SG10201703437WA (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection
SG11201502761RA SG11201502761RA (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201703437WA SG10201703437WA (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Country Status (7)

Country Link
US (2) US20140137801A1 (enExample)
JP (1) JP6281958B2 (enExample)
KR (1) KR102135229B1 (enExample)
CN (1) CN104756231B (enExample)
SG (2) SG10201703437WA (enExample)
TW (1) TWI628729B (enExample)
WO (1) WO2014066033A1 (enExample)

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US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
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CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
JP6902060B2 (ja) 2019-02-13 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、およびプログラム
JP7159986B2 (ja) * 2019-06-27 2022-10-25 株式会社Sumco エピタキシャル成長装置およびエピタキシャルウェーハの製造方法
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Also Published As

Publication number Publication date
JP6281958B2 (ja) 2018-02-21
CN104756231A (zh) 2015-07-01
KR20150074165A (ko) 2015-07-01
KR102135229B1 (ko) 2020-07-17
US20140137801A1 (en) 2014-05-22
WO2014066033A1 (en) 2014-05-01
TWI628729B (zh) 2018-07-01
TW201419438A (zh) 2014-05-16
US20180209043A1 (en) 2018-07-26
JP2015534283A (ja) 2015-11-26
CN104756231B (zh) 2020-08-28
SG10201703437WA (en) 2017-05-30

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