JP6274764B2 - 表示装置およびその製造方法 - Google Patents
表示装置およびその製造方法 Download PDFInfo
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- JP6274764B2 JP6274764B2 JP2013139194A JP2013139194A JP6274764B2 JP 6274764 B2 JP6274764 B2 JP 6274764B2 JP 2013139194 A JP2013139194 A JP 2013139194A JP 2013139194 A JP2013139194 A JP 2013139194A JP 6274764 B2 JP6274764 B2 JP 6274764B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 claims description 73
- 239000010408 film Substances 0.000 claims description 66
- 238000007789 sealing Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 44
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- 239000000463 material Substances 0.000 claims description 22
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 17
- 230000002265 prevention Effects 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 8
- -1 PbF 2 Inorganic materials 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 3
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 3
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
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- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Inorganic materials [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 293
- 230000000052 comparative effect Effects 0.000 description 36
- 238000002834 transmittance Methods 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 229920000767 polyaniline Polymers 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000001066 destructive effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
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- 239000000203 mixture Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
- MAGFQRLKWCCTQJ-UHFFFAOYSA-M 4-ethenylbenzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-M 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 2
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 2
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 1
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 1
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- MIOPJNTWMNEORI-UHFFFAOYSA-N camphorsulfonic acid Chemical compound C1CC2(CS(O)(=O)=O)C(=O)CC1C2(C)C MIOPJNTWMNEORI-UHFFFAOYSA-N 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- JVZRCNQLWOELDU-UHFFFAOYSA-N gamma-Phenylpyridine Natural products C1=CC=CC=C1C1=CC=NC=C1 JVZRCNQLWOELDU-UHFFFAOYSA-N 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KLZHUQDVWUXWEZ-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1.C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 KLZHUQDVWUXWEZ-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
ガラス材質の基板(図1の10)上に有機発光素子(図1の30)を形成した。また、薄膜封止層(図1の50)の代わりに封止ガラス基盤を利用して有機発光素子30を封止した。封止有機基板上には円偏光板を付着した。封止ガラス基盤の厚さは500μmであり、円偏光板の厚さは約150μmである。
ガラス材質の基板(図1の10)上に有機発光素子(図1の30)を形成した。また、無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)からなる5層構造の薄膜封止層(図1の50)を形成し、薄膜封止層(図1の50)の総厚さは6μmで形成した。反射防止層(図1の70)は、金属層(Cr、7μm)/誘電体層(SiO2,50μm)/金属層(Cr、7μm)/誘電体層(SiO2,70μm)を含む積層構造に形成した。
ガラス材質の基板(図1の10)上に有機発光素子(図1の30)を形成した。また、無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)からなる5層構造の薄膜封止層(図1の50)を形成した。反射防止層(図1の70)は、金属層(Ti、4μm)/誘電体層(SiO2,70μm)/金属層(Ti、3μm)/誘電体層(SiO2,70μm)を含む積層構造に形成した。
ガラス材質の基板(図1の10)上に有機発光素子(図1の30)を形成した。また、無機膜層(SiNx)/無機膜層(SiCN)/無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)からなる5層構造の薄膜封止層(図1の50)を形成した。また、干渉防止層(図2の60)を追加し、干渉防止層(図2の60)として1μm厚さのアクリル層を使用した。反射防止層(図1の70)は、金属層(Ag、7μm)/誘電体層(SiO2,30μm)/金属層(Cr、5μm)/誘電体層(SiO2,50μm)を含む積層構造に形成した。
ガラス材質の基板(図1の10)上に有機発光素子(図1の30)を形成した。また、無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)からなる薄膜封止層(図1の50)を形成した。反射防止層(図1の70)は、金属層(Cr、7μm)/誘電体層(SiO2,30μm)/金属層(Cr、6μm)/誘電体層(SiO2,40μm)/金属層(Cr、4μm)/誘電体層(SiO2,70μm)を含む積層構造に形成した。
ガラス材質の基板(図1の10)上に有機発光素子(図1の30)を形成した。また、無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)/有機膜層(アクリル)/無機膜層(Al2O3)からなる薄膜封止層(図1の50)を形成した。反射防止層(図1の70)は、誘電体層(SiO22,50μm)/誘電体層(TiO2,30μm)/金属層(Ag、10μm)/誘電体層(SiO2,30μm)/金属層(Cr、9μm)/誘電体層(SiO2,50μm)を含む積層構造に形成した。
10 基板、
30 有機発光素子、
50 薄膜封止層、
60 干渉防止層、
70 反射防止層。
Claims (19)
- 基板と、
前記基板上に形成された有機発光素子と、
前記基板上に形成され、前記有機発光素子を覆う、無機膜層及び有機膜層を含む薄膜封止層と、
前記薄膜封止層上に形成された干渉防止層と、
前記干渉防止層上に形成されて誘電体層および金属層を含む反射防止層と、
を含み、
前記干渉防止層は、前記無機膜層、前記有機膜層及び前記誘電体層の何れか一つと同じ物質で形成される表示装置。 - 前記誘電体層および前記金属層は、各々少なくとも一つ以上備えられ、交互に積層される請求項1に記載の表示装置。
- 前記誘電体層は、
SiO2,TiO2,ZrO2,Ta2O5,HfO2,Al2O3,ZnO,Y2O3,BeO,MgO,PbO2,WO3,VOX,SiNX,eNX,AlN,ZnS,CdS,SiC,SiCN,MgF,CaF2,NaF,BaF2,PbF2,LiF,LaF3,GaPからなる群から選択される何れか一つまたは二つ以上を混合した化合物からなる請求項1または2に記載の表示装置。 - 前記金属層は、
Al、Ag、Mg、Cr、Ti、Ni、Au、Ta、Cu、Ca、Co、Fe、Mo、W、Pt、Ybからなる群から選択される何れか一つの金属または二つ以上の合金からなる請求項1〜3のいずれか一項に記載の表示装置。 - 前記無機膜層は、
窒化シリコン、窒化アルミニウム、窒化ジルコニウム、窒化チタン、窒化ハフニウム、窒化タンタル、酸化シリコン、酸化アルミニウム、酸化チタン、酸化スズ、酸化セリウムおよびシリコン酸化窒化物(SiON)からなる群から選択された一つ以上の物質を含む請求項1に記載の表示装置。 - 前記無機膜層および前記有機膜層は、交互に積層される請求項1に記載の表示装置。
- 前記有機膜層は、エポキシ系樹脂、アクリル系樹脂、ペリレン系樹脂、ポリイミド樹脂からなる群から選択された一つ以上の物質を含む請求項1に記載の表示装置。
- 前記干渉防止層は、透明材質からなる請求項1に記載の表示装置。
- 前記干渉防止層の厚さは、
100nm〜10μmである請求項1に記載の表示装置。 - 前記有機発光素子を駆動させる薄膜トランジスタをさらに含む請求項9に記載の表示装置。
- 前記薄膜トランジスタは、非晶質シリコン薄膜トランジスタ、多結晶シリコン薄膜トランジスタ、酸化物薄膜トランジスタのうち何れか一つである請求項10に記載の表示装置。
- 基板上に有機発光素子を形成し、
前記基板上に前記有機発光素子を覆う、無機膜層及び有機膜層を含む薄膜封止層を形成し、
前記薄膜封止層上に干渉防止層を形成し、
前記干渉防止層上に誘電層および金属層を含む反射防止層を形成することを含み、
前記干渉防止層は、前記無機膜層、前記有機膜層及び前記誘電体層の何れか一つと同じ物質で形成される表示装置製造方法。 - 前記無機膜層は、
窒化シリコン、窒化アルミニウム、窒化ジルコニウム、窒化チタン、窒化ハフニウム、窒化タンタル、酸化シリコン、酸化アルミニウム、酸化チタン、酸化スズ、酸化セリウムおよびシリコン酸化窒化物(SiON)からなる群から選択された一つ以上の物質を含む請求項12に記載の表示装置製造方法。 - 前記薄膜封止層を形成することは、
前記無機膜層を形成することと前記無機膜層上に前記有機膜層を形成することを複数回行うことを含む請求項12に記載の表示装置製造方法。 - 前記有機膜層は、エポキシ系樹脂、アクリル系樹脂、ペリレン系樹脂、ポリイミド樹脂からなる群から選択された一つ以上の物質を含む請求項12に記載の表示装置製造方法。
- 前記反射防止層を形成することは、
前記薄膜封止層上に前記誘電層を形成することと前記誘電層上に前記金属層を形成することを複数回行うことを含む請求項12〜15のいずれか一項に記載の表示装置製造方法。 - 前記誘電体層は、SiO2,TiO2,ZrO2,Ta2O5,HfO2,Al2O3,ZnO,Y2O3,BeO,MgO,PbO2,WO3,VOX,SiNX,eNX,AlN,ZnS,CdS,SiC,SiCN,MgF,CaF2,NaF,BaF2,PbF2,LiF,LaF3,GaPからなる群から選択される何れか一つまたは二つ以上を混合した化合物からなる請求項16に記載の表示装置製造方法。
- 前記金属層は、Al、Ag、Mg、Cr、Ti、Ni、Au、Ta、Cu、Ca、Co、Fe、Mo、W、Pt、Ybからなる群から選択される何れか一つの金属または二つ以上の合金である請求項16に記載の表示装置製造方法。
- 前記干渉防止層は、透明材質からなる請求項12に記載の表示装置製造方法。
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TWI624048B (zh) | 2018-05-11 |
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JP2014086415A (ja) | 2014-05-12 |
US9048459B2 (en) | 2015-06-02 |
US20140117330A1 (en) | 2014-05-01 |
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TW201421670A (zh) | 2014-06-01 |
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