JP6266765B2 - ガラス貫通ビア技術を使用するハイパスフィルタおよびローパスフィルタのための設計 - Google Patents

ガラス貫通ビア技術を使用するハイパスフィルタおよびローパスフィルタのための設計 Download PDF

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JP6266765B2
JP6266765B2 JP2016516643A JP2016516643A JP6266765B2 JP 6266765 B2 JP6266765 B2 JP 6266765B2 JP 2016516643 A JP2016516643 A JP 2016516643A JP 2016516643 A JP2016516643 A JP 2016516643A JP 6266765 B2 JP6266765 B2 JP 6266765B2
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inductors
glass substrate
coupled
substrate
inductor
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Japanese (ja)
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JP2016527743A5 (enExample
JP2016527743A (ja
Inventor
チェンジエ・ズオ
ジョンヘ・キム
チャンハン・ホビー・ユン
デイク・ダニエル・キム
マリオ・フランシスコ・ヴェレス
ジェ−ション・ラン
ロバート・ポール・ミクルカ
マシュー・マイケル・ノワク
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0138—Electrical filters or coupling circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Filters And Equalizers (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
JP2016516643A 2013-05-31 2014-03-25 ガラス貫通ビア技術を使用するハイパスフィルタおよびローパスフィルタのための設計 Expired - Fee Related JP6266765B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361829714P 2013-05-31 2013-05-31
US61/829,714 2013-05-31
US14/055,707 US9425761B2 (en) 2013-05-31 2013-10-16 High pass filters and low pass filters using through glass via technology
US14/055,707 2013-10-16
PCT/US2014/031779 WO2014193525A1 (en) 2013-05-31 2014-03-25 High pass filters and low pass filters using through glass via technology and method for manufacturing the same

Publications (3)

Publication Number Publication Date
JP2016527743A JP2016527743A (ja) 2016-09-08
JP2016527743A5 JP2016527743A5 (enExample) 2016-12-15
JP6266765B2 true JP6266765B2 (ja) 2018-01-24

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JP2016516643A Expired - Fee Related JP6266765B2 (ja) 2013-05-31 2014-03-25 ガラス貫通ビア技術を使用するハイパスフィルタおよびローパスフィルタのための設計

Country Status (6)

Country Link
US (1) US9425761B2 (enExample)
EP (1) EP3005559B1 (enExample)
JP (1) JP6266765B2 (enExample)
KR (1) KR101799425B1 (enExample)
CN (1) CN105308862B (enExample)
WO (1) WO2014193525A1 (enExample)

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US10665377B2 (en) 2014-05-05 2020-05-26 3D Glass Solutions, Inc. 2D and 3D inductors antenna and transformers fabricating photoactive substrates
US9954267B2 (en) 2015-12-28 2018-04-24 Qualcomm Incorporated Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter
US12165809B2 (en) 2016-02-25 2024-12-10 3D Glass Solutions, Inc. 3D capacitor and capacitor array fabricating photoactive substrates
US10026546B2 (en) 2016-05-20 2018-07-17 Qualcomm Incorported Apparatus with 3D wirewound inductor integrated within a substrate
JP6838328B2 (ja) * 2016-09-15 2021-03-03 大日本印刷株式会社 インダクタおよびインダクタの製造方法
US10872950B2 (en) 2016-10-04 2020-12-22 Nanohenry Inc. Method for growing very thick thermal local silicon oxide structures and silicon oxide embedded spiral inductors
US10510828B2 (en) 2016-10-04 2019-12-17 Nano Henry, Inc. Capacitor with high aspect radio silicon cores
KR102614826B1 (ko) 2017-12-15 2023-12-19 3디 글래스 솔루션즈 인코포레이티드 결합 전송 라인 공진 rf 필터
JP7106875B2 (ja) * 2018-01-30 2022-07-27 凸版印刷株式会社 ガラスコアデバイスの製造方法
US10693432B2 (en) * 2018-05-17 2020-06-23 Qualcommm Incorporated Solenoid structure with conductive pillar technology
CN112088489B (zh) 2018-05-24 2025-06-24 凸版印刷株式会社 电路基板
US10433425B1 (en) * 2018-08-01 2019-10-01 Qualcomm Incorporated Three-dimensional high quality passive structure with conductive pillar technology
CN109302161A (zh) * 2018-08-31 2019-02-01 维沃移动通信有限公司 调谐滤波电路和终端设备
EP3648128B1 (en) * 2018-11-02 2024-01-03 Delta Electronics (Shanghai) Co., Ltd. Transformer module and power module
KR20210147040A (ko) 2019-04-05 2021-12-06 3디 글래스 솔루션즈 인코포레이티드 유리 기반의 빈 기판 집적 도파관 디바이스
CN110519913A (zh) * 2019-09-23 2019-11-29 努比亚技术有限公司 一种实现pcb单点接地设计的方法、封装和印刷电路板
JP7608727B2 (ja) * 2020-04-07 2025-01-07 Ｔｏｐｐａｎホールディングス株式会社 高周波フィルタ内蔵ガラスコア配線基板の製造方法
JP2023516817A (ja) * 2020-04-17 2023-04-20 スリーディー グラス ソリューションズ，インク 広帯域誘導
JP2022050298A (ja) * 2020-09-17 2022-03-30 株式会社村田製作所 インダクタ部品
US12324169B2 (en) 2021-04-23 2025-06-03 Boe Technology Group Co., Ltd. Substrate integrated with passive device and method for manufacturing the same
CN115241163B (zh) 2021-04-23 2025-03-25 京东方科技集团股份有限公司 可调滤波器及其制备方法
US20220408562A1 (en) * 2021-06-16 2022-12-22 Intel Corporation Integrated rf passive devices on glass
US12424518B2 (en) * 2022-02-28 2025-09-23 Qualcomm Incorporated Capacitor embedded 3D resonator for broadband filter
WO2023245593A1 (zh) * 2022-06-24 2023-12-28 京东方科技集团股份有限公司 滤波器及其制备方法
WO2024116490A1 (ja) * 2022-11-29 2024-06-06 株式会社村田製作所 電子部品
CN116318003A (zh) * 2022-12-12 2023-06-23 南京国博电子股份有限公司 一种三维混合集成滤波器及其电子装置

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JPH0992539A (ja) 1995-09-22 1997-04-04 Uniden Corp 立体渦巻状インダクタ及びそれを用いた誘導結合フィルタ
JP2002184946A (ja) * 2000-12-11 2002-06-28 Murata Mfg Co Ltd Ｍｉｍキャパシタおよびその製造方法
JP3882779B2 (ja) * 2002-05-27 2007-02-21 日本電気株式会社 薄膜キャパシタ、薄膜キャパシタを含む複合受動部品、それらの製造方法およびそれらを内蔵した配線基板
JP2004200227A (ja) 2002-12-16 2004-07-15 Alps Electric Co Ltd プリントインダクタ
JP4499731B2 (ja) * 2004-07-15 2010-07-07 富士通株式会社 容量素子とその製造方法、及び半導体装置
JP2006229173A (ja) * 2005-02-21 2006-08-31 Tokyo Electron Ltd インダクタンス素子
FR2906962B1 (fr) 2006-10-06 2010-11-12 Thales Sa Self integree dans un circuit imprime
JP4305779B2 (ja) 2007-01-30 2009-07-29 Ｔｄｋ株式会社 積層型ローパスフィルタ
US7724117B2 (en) 2008-01-11 2010-05-25 Northrop Grumman Systems Corporation Multilayer passive circuit topology
US8384507B2 (en) 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
EP2656385B1 (en) 2010-12-20 2021-05-26 Intel Corporation Integrated digital- and radio-frequency system-on-chip devices with integral passive devices in package substrates
US20130207745A1 (en) * 2012-02-13 2013-08-15 Qualcomm Incorporated 3d rf l-c filters using through glass vias
US20140104284A1 (en) * 2012-10-16 2014-04-17 Qualcomm Mems Technologies, Inc. Through substrate via inductors

Also Published As

Publication number Publication date
CN105308862A (zh) 2016-02-03
CN105308862B (zh) 2018-07-24
EP3005559A1 (en) 2016-04-13
US20140354378A1 (en) 2014-12-04
KR101799425B1 (ko) 2017-11-20
KR20160015283A (ko) 2016-02-12
JP2016527743A (ja) 2016-09-08
US9425761B2 (en) 2016-08-23
WO2014193525A1 (en) 2014-12-04
EP3005559B1 (en) 2017-12-13

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