JP6261352B2 - カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法 - Google Patents

カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法 Download PDF

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JP6261352B2
JP6261352B2 JP2014010306A JP2014010306A JP6261352B2 JP 6261352 B2 JP6261352 B2 JP 6261352B2 JP 2014010306 A JP2014010306 A JP 2014010306A JP 2014010306 A JP2014010306 A JP 2014010306A JP 6261352 B2 JP6261352 B2 JP 6261352B2
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carbon nanotube
resin portion
thermoplastic resin
thermosetting resin
sheet
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JP2015138903A5 (enExample
JP2015138903A (ja
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織田　卓哉
卓哉 織田
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2014010306A priority Critical patent/JP6261352B2/ja
Priority to US14/533,556 priority patent/US9873825B2/en
Priority to CN201410643282.7A priority patent/CN104810335B/zh
Publication of JP2015138903A publication Critical patent/JP2015138903A/ja
Publication of JP2015138903A5 publication Critical patent/JP2015138903A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2014010306A 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法 Active JP6261352B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014010306A JP6261352B2 (ja) 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法
US14/533,556 US9873825B2 (en) 2014-01-23 2014-11-05 Carbon nanotube sheet, semiconductor device, method of manufacturing carbon nanotube sheet, and method of manufacturing semiconductor device
CN201410643282.7A CN104810335B (zh) 2014-01-23 2014-11-06 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014010306A JP6261352B2 (ja) 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法

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JP2015138903A JP2015138903A (ja) 2015-07-30
JP2015138903A5 JP2015138903A5 (enExample) 2016-10-27
JP6261352B2 true JP6261352B2 (ja) 2018-01-17

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US (1) US9873825B2 (enExample)
JP (1) JP6261352B2 (enExample)
CN (1) CN104810335B (enExample)

Families Citing this family (7)

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EP3478045B1 (en) * 2016-06-28 2022-10-19 Zeon Corporation Heat dissipating device
KR102546241B1 (ko) 2016-10-05 2023-06-22 삼성전자주식회사 반도체 패키지
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
JP7105234B2 (ja) * 2017-02-24 2022-07-22 リンテック・オヴ・アメリカ，インコーポレイテッド ナノファイバー熱界面材料
JP7338738B2 (ja) * 2018-08-23 2023-09-05 株式会社レゾナック 半導体デバイスの製造方法、熱伝導シート、及び熱伝導シートの製造方法
KR102550135B1 (ko) * 2018-08-23 2023-06-30 가부시끼가이샤 레조낙 반도체 디바이스의 제조 방법, 열전도 시트, 및 열전도 시트의 제조 방법
US11915991B2 (en) * 2021-03-26 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having first heat spreader and second heat spreader and manufacturing method thereof

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CN100383213C (zh) * 2004-04-02 2008-04-23 清华大学 一种热界面材料及其制造方法
US7135769B2 (en) * 2005-03-29 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of manufacturing thereof
CN101054467B (zh) * 2006-04-14 2010-05-26 清华大学 碳纳米管复合材料及其制备方法
US7489033B2 (en) * 2006-11-10 2009-02-10 Intel Corporation Electronic assembly with hot spot cooling
US8064203B2 (en) * 2007-02-22 2011-11-22 Dow Corning Corporation Process for preparing conductive films and articles prepared using the process
JP5104688B2 (ja) * 2007-10-22 2012-12-19 富士通株式会社 シート状構造体及びその製造方法並びに電子機器
JP5276565B2 (ja) * 2009-10-14 2013-08-28 新光電気工業株式会社 放熱用部品
JP5295932B2 (ja) 2009-11-02 2013-09-18 新光電気工業株式会社 半導体パッケージ及びその評価方法、並びにその製造方法
JP5842349B2 (ja) * 2011-03-18 2016-01-13 富士通株式会社 シート状構造体、シート状構造体の製造方法、電子機器及び電子機器の製造方法
JP5673325B2 (ja) 2011-04-20 2015-02-18 富士通株式会社 カーボンナノチューブの形成方法及び熱拡散装置
JP6015009B2 (ja) * 2012-01-25 2016-10-26 富士通株式会社 電子装置及びその製造方法
KR101332866B1 (ko) * 2012-02-16 2013-11-22 앰코 테크놀로지 코리아 주식회사 반도체 장치
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CN104810335A (zh) 2015-07-29
US9873825B2 (en) 2018-01-23
CN104810335B (zh) 2018-11-13
JP2015138903A (ja) 2015-07-30
US20150206822A1 (en) 2015-07-23

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