TWI663695B - 晶片封裝結構及其製造方法 - Google Patents

晶片封裝結構及其製造方法 Download PDF

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TWI663695B
TWI663695B TW106146116A TW106146116A TWI663695B TW I663695 B TWI663695 B TW I663695B TW 106146116 A TW106146116 A TW 106146116A TW 106146116 A TW106146116 A TW 106146116A TW I663695 B TWI663695 B TW I663695B
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substrate
insulating layer
wafers
thermally conductive
discrete devices
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TW201841315A (zh
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會利 符
蔡樹傑
胡驍
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大陸商華為技術有限公司
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Abstract

本發明實施例提供一種晶片封裝結構，包括基板、封裝於所述基板的上表面的多個晶片和多個分離器件、以及散熱裝置，所述散熱裝置包括層壓設置的絕緣層和導熱層，所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，用於將所述多個晶片及多個分立器件產生的熱量傳導至所述導熱層和所述基板上，以通過所述導熱層及所述基板將所述多個晶片及多個分立器件產生的熱量散除。另，本發明實施例還提供一種晶片封裝結構的製造方法。所述晶片封裝結構通過設置所述散熱裝置，可以實現均勻、高效的系統級晶片封裝散熱。

Description

晶片封裝結構及其製造方法
本發明涉及晶片封裝技術領域，尤其涉及一種晶片封裝結構及其製造方法。
隨著晶片工藝節點的不斷下降，晶片的集成度不斷上升。小尺寸，高速率，高性能已成為電子器件發展的趨勢。晶片中單位面積的電晶體數量越來越多，功率密度也隨之不斷提高，晶片的熱管理變得越來越挑戰。在系統級晶片封裝(System-in-Package，SiP)結構中，多個異質晶片及分立器件被封裝集成在一個小尺寸的系統中。由於不同晶片在不同工作狀態下有不同的功耗，導致系統級封裝結構容易出現熱累積和散熱不均等問題。目前，提高晶片散熱能力的常用技術是在晶片的無源面通過熱介面材料（Thermal Interface Materials，TIM）添加散熱裝置，如金屬散熱片，熱電製冷片（Thermo Electric Cooler ，TEC）等，最終將晶片產生的熱量傳遞到空氣。然而，這種散熱方式對於系統級晶片封裝時，無法實現多個異質晶片及分立器件的快速均勻散熱，不利於提升系統級晶片封裝的散熱效率。
本發明實施例提供一種晶片封裝結構及其製造方法，以及一種應用所述系統級晶片封裝結構的終端，以實現系統級晶片封裝內多個晶片及分立器件的快速均勻散熱，提升系統級晶片封裝結構及終端的散熱效率。
本發明實施例第一方面提供一種晶片封裝結構，包括基板、封裝於所述基板的上表面的多個晶片和多個分離器件、以及散熱裝置，所述散熱裝置包括層壓設置的絕緣層和導熱層，所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，用於將所述多個晶片及多個分立器件產生的熱量傳導至所述導熱層和所述基板上，以通過所述導熱層及所述基板將所述多個晶片及多個分立器件產生的熱量散除。
所述晶片封裝結構通過設置所述包括層壓設置的絕緣層和導熱層的散熱裝置，並將所述絕緣層全包覆所述晶片封裝的多個晶片、多個分立器件及基板的上表面，從而可以有效增加散熱面積，實現對所述多個晶片及個分立器件的均勻快速散熱。
在一種實施方式中，所述層壓設置的絕緣層和導熱層在垂直於所述基板的上表面的投影方向上重疊。
在一種實施方式中，所述絕緣層還用於將所述多個晶片及多個分立器件產生的熱量傳導至空氣中，以直接通過所述絕緣層將所述多個晶片及多個分立器件產生的熱量散除。
由於所述絕緣層在靠近所述基板的邊緣位置直接與空氣接觸，從而還可以通過所述絕緣層直接將所述多個晶片及多個分立器件產生的熱量散除，以進一步提升散熱速度。
在一種實施方式中，所述絕緣層由可成形性的絕緣材料製成。
通過採用可成形性的材料製成所述絕緣層，從而在將所述散熱裝置固化到系統級晶片封裝之上時，可以通過熱壓等方式使得所述絕緣層與所述多個晶片、多個分立器件的外表面及所述基板的上表面緊密貼合，從而有效增加散熱面積，實現對所述多個晶片及多個分立器件的快速散熱。
在一種實施方式中，所述導熱層由導熱材料和可成形性的絕緣材料製成。
在一種實施方式中，所述導熱材料均勻摻雜於所述可成形性的絕緣材料中。
通過在所述可成形性的絕緣材料中均勻摻雜所述導熱材料，從而形成所述導熱層，一方面可以借助所述絕緣材料的可成形性來使得所述導熱層也具有良好的可成形性，另一方面通過所述均勻摻雜的導熱材料來保證所述導熱層的每一個區域具有均勻的導熱率，從而實現對所述多個晶片及多個分立器件的均勻散熱。
在一種實施方式中，所述導熱材料包括石墨烯、石墨片、氮化硼片中的一種或多種。
在一種實施方式中，所述可成形性的絕緣材料包括環氧樹脂或聚醯亞胺中的至少一項。
通過將石墨烯、石墨片或氮化硼片按照不同的比例均勻摻雜到環氧樹脂或聚醯亞胺中製成所述導熱層，以方便可以保證良好的導熱效率，提升散熱速度，另一方面可以保證所述導熱層具有良好的可成形性，從而在將所述散熱裝置固化到系統級晶片封裝之上時，可以通過熱壓等方式使得所述導熱層跟隨所述多個晶片、多個分立器件的外表面及所述基板的上表面的外形的變化而變化，有利於進一步增加散熱面積，提升整個系統級晶片封裝的散熱效率。
在一種實施方式中，所述晶片包括引線鍵合晶片或倒裝晶片中的任一項。
在一種實施方式中，所述晶片封裝結構還包括多個焊球，所述多個焊球呈陣列設置於所述基板的下表面。
本發明實施例第二方面提供一種晶片封裝結構的製造方法，包括：
提供一基板，並在基板的上表面封裝多個晶片及多個分離器件；
提供一散熱裝置，所述散熱裝置包括絕緣層和導熱層；
將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面。
所述晶片封裝結構的製造方法通過將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，從而可以有效增加散熱面積，實現對所述多個晶片及個分立器件的均勻快速散熱。
在一種實施方式中，所述將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，包括：
對所述絕緣層加熱到第一溫度，並以第一壓力持續壓合第一時間至完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面；
對所述絕緣層熱到第二溫度並持續第二時間，以對所述絕緣層進行固化；
對所述導熱層加熱到第三溫度，並以第二壓力持續壓合第三時間至所述絕緣層的上表面；
對所述導熱層加熱到第四溫度並持續第四時間，以對所述導熱層進行固化。
在一種實施方式中，所述將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，包括：
將所述導熱層壓合於所述絕緣層上，形成層壓設置的絕緣層和導熱層作為所述散熱裝置；
將所述絕緣層朝向所述基板的上表面，對所述散熱裝置加熱到第一溫度，並以第一壓力持續壓合第一時間至所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面；
對所述散熱裝置加熱到第二溫度並持續第二時間，以對所述散熱裝置進行固化。
在一種實施方式中，所述第一溫度和所述第三溫度均為150度，所述第二溫度和所述第四溫度均為175度，所述第一壓力和所述第二壓力均為7-10Kgf/cm2，所述第一時間和所述第三時間均為30秒，所述第二時間和所述第四時間均為1小時。
本發明實施例第四方面提供一種終端，包括晶片封裝結構和主機板，所述主機板上設置有焊盤，所述晶片封裝結構焊接於所述焊盤上，所述晶片封裝結構，包括基板、封裝於所述基板的上表面的多個晶片和多個分離器件、以及散熱裝置，所述散熱裝置包括層壓設置的絕緣層和導熱層，所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，用於將所述多個晶片及多個分立器件產生的熱量傳導至所述導熱層和所述基板上，以通過所述導熱層及所述基板將所述多個晶片及多個分立器件產生的熱量散除。
所述晶片封裝結構通過在所述基板的上表面設置所述包括絕緣層和導熱層的散熱裝置，且通過熱壓工藝使得所述絕緣層與所述多個晶片、多個分立器件的外表面及所述基板的上表面緊密貼合，從而可以有效增加散熱面積，提升散熱均勻性，實現對所述多個晶片及多個分立器件的快速高效散熱，從而提升所述終端的散熱效率。
下面將結合附圖，對本發明的實施例進行描述。
請參閱第1圖，在本發明一個實施例中，提供一種系統級晶片封裝結構10，包括基板104，所述基板104的上表面封裝有多個晶片101、102及多個分立器件103，所述基板104的下表面設置有多個焊球105。在本實施例中，所述晶片101以倒裝形式（Flip Chip）封裝於所述基板104的上表面，所述晶片102以引線鍵合形式（Wire bonding）封裝於所述基板104的上表面，所述多個分立器件103以表面貼裝的形式封裝於所述基板104的上表面。可以理解，當所述系統級晶片封裝結構10工作時，所述多個晶片101、102及多個分立器件103為發熱源。為使所述系統級晶片封裝結構10的工作溫度處於額定的溫度範圍之內，需要將所述多個晶片101、102及多個分立器件103產生的熱量均勻快速地散除，從而保證所述系統級晶片封裝結構10的穩定工作。可以理解，所述晶片101、102的類型包括但不限於引線鍵合晶片和倒裝晶片，所述分立器件包括但不限於電容和電感。
所述系統級晶片封裝結構10還包括散熱裝置100，所述散熱裝置100包括層壓設置的絕緣層106和導熱層107，所述絕緣層106完全包覆並貼合所述多個晶片101、102、多個分立器件103的外表面及所述基板104的上表面，用於將所述多個晶片101、102及多個分立器件103產生的熱量傳導至所述導熱層107和所述基板104上，以通過所述導熱層107及所述基板104將所述多個晶片101、102及多個分立器件103產生的熱量散除。其中，所述層壓設置是指：在用或不用粘結劑的條件下，借助加熱、加壓把兩層或多層相同或不相同材料結合為整體。在本實施例中，所述絕緣層106和所述導熱層107在熱力和壓力的作用下結合為整體。在本實施例中，所述層壓設置的絕緣層106和導熱層107在垂直於所述基板104的上表面的投影方向上重疊。
可以理解，所述絕緣層106還用於將所述多個晶片101、102及多個分立器件103產生的熱量傳導至空氣中，以直接通過所述絕緣層106將所述多個晶片101、102及多個分立器件103產生的熱量散除。其中，所述絕緣層106具有良好的可成形性及一定的導熱率，從而可以通過熱壓的方式將所述散熱裝置100固化於所述基板104上，並使得所述絕緣層106與所述多個晶片101、102、多個分立器件103的外表面及所述基板104的上表面緊密貼合，從而有效增加散熱面積，實現對所述多個晶片101、102、多個分立器件103的快速散熱。在本實施例中，所述絕緣層106由可成形性的絕緣材料製成，例如包括並不限於環氧樹脂或聚醯亞胺；所述導熱層107由石墨烯、石墨片或氮化硼片按照不同的比例摻雜環氧樹脂或聚醯亞胺製成。可以理解，所述導熱層107並不限於由石墨烯、石墨片或氮化硼片摻雜環氧樹脂或聚醯亞胺製成，也可以有其他與石墨烯、石墨片或氮化硼片具有相似性能的導熱材料按照一定的比例均勻摻雜於其他與環氧樹脂或聚醯亞胺具有相似性能的可成形性的絕緣材料製成。
在一種實施方式中，所述散熱裝置100可以包括多層所述絕緣層106和多層所述導熱層107，多層所述絕緣層106和多層所述導熱層107交替層壓設置。當所述散熱裝置100包括多層所述絕緣層106和多層所述導熱層107時，底層為絕緣層106，用於完全包覆所述多個晶片101、102、多個分立器件103的外表面及所述基板104的上表面，頂層為導熱層107，用於將所述多個晶片101、102及多個分立器件103產生的熱量傳導至空氣中。可以理解，不同的絕緣層106及不同的導熱層107可以有不同的導熱係數和不同的導電係數。
請參閱第2圖，在製造所述系統級晶片封裝結構10時，可以首先在所述基板104的上表面封裝好對應的晶片101、102及分立器件103，然後採用熱壓的方式將所述散熱裝置100固化於所述基板104的上表面。具體地，可以提前將所述絕緣層106和導熱層107層壓在一起形成所述散熱裝置100，進而將所述絕緣層106朝向所述基板104的上表面，採用熱壓的方式將所述散熱裝置100固化於所述基板104的上表面，如第2圖所示。也可以先採用熱壓的方式將所述絕緣層106固化於所述基板104的上表面，然後採用熱壓的方式將所述導熱層107固化於所述絕緣層106的上表面。可以理解，將所述散熱裝置100固化於所述基板104的上表面的工藝條件可以包括但不限於溫度條件和壓力條件。
請參閱第3圖，通過將所述散熱裝置100的絕緣層106完全包覆於所述多個晶片101、102、多個分立器件103的外表面及所述基板104的上表面，從而可以在所述多個晶片101、102、多個分立器件103周圍形成全方位的散熱路徑，實現多個晶片101、102、多個分立器件103的均勻高效散熱。具體地，所述系統級晶片封裝結構10的散熱路徑如第3圖中箭頭方向所示，由於所述絕緣層106與所述基板104的上表面及所述導熱層107緊密接觸，所述多個晶片101、102、多個分立器件103產生的熱量一方面可以通過所述絕緣層106傳導至所述基板104上，進而通過所述基板104將所述熱量散除到空氣中，另一方面可以通過所述絕緣層106傳導至所述導熱層107上，進而通過所述導熱層107將所述熱量散除到空氣中，此外，靠近所述基板104的邊緣位置的熱量，還可以通過所述絕緣層106直接傳導至空氣中以實現散熱。由於所述絕緣層106與所有的晶片101、102及分離器件103均緊密接觸，從而可以使得晶片101、102、分離器件103產生的熱量可以更均勻地傳導至所述導熱層107及所述基板104上，從而可以有效防止因個別晶片或者分立器件溫度過高而影響整個系統級晶片封裝結構10的性能。
請參閱第4圖，在本發明一個實施例中，提供一種終端40，包括系統級晶片封裝結構10和主機板20，所述主機板20上設置有焊盤21，所述系統級晶片封裝結構10通過所述焊球105焊接於所述焊盤21上，從而實現與所述主機板20的電性連接。其中，所述系統級晶片封裝結構10為第1圖至第3圖所示實施例中所述的系統級晶片封裝結構10，具體可以參照第1圖至第3圖所示實施例中的相關描述，此處不再贅述。可以理解，由於所述系統級晶片封裝結構10包括所述散熱裝置100，從而可以實現所述系統級晶片封裝結構10內各晶片101、102及分離器件103的均勻高效散熱，有利於提升所述終端40的散熱性能，從而保證所述終端40工作的穩定性。其中，所述終端可以是但不限於手機、平板電腦、智慧手錶等。
請參閱第5圖，在本發明一個實施例中，提供一種系統級晶片封裝結構的製造方法，包括：
步驟501：提供一基板，並在基板的上表面封裝多個晶片及多個分離器件；
步驟502：提供一散熱裝置，所述散熱裝置包括絕緣層和導熱層；
步驟503：對所述絕緣層加熱到第一溫度，並以第一壓力持續壓合第一時間至完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面；
步驟504：對所述絕緣層熱到第二溫度並持續第二時間，以對所述絕緣層進行固化；
步驟505：對所述導熱層加熱到第三溫度，並以第二壓力持續壓合第三時間至所述導熱層貼合所述絕緣層的上表面；
步驟506：對所述導熱層加熱到第四溫度並持續第四時間，以對所述導熱層進行固化。
在本實施例中，在本實施例中，所述第一溫度和所述第三溫度均為150度，所述第二溫度和所述第四溫度均為175度，所述第一壓力和所述第二壓力均為7-10Kgf/cm2（千克力/平方釐米），所述第一時間和所述第三時間均為30秒，所述第二時間和所述第四時間均為1小時。可以理解，所述絕緣層壓合時的溫度條件、壓力條件及持續時間與所述導熱層壓合時的溫度條件、壓力條件及持續時間可以相同或者不同，所述絕緣層固化時的溫度條件及持續時間與所述導熱層固化時的溫度條件及持續時間也可以相同或者不同，具體可以根據不同的材料來選擇。
請參閱第6圖，在本發明一個實施例中，提供一種系統級晶片封裝結構的製造方法，包括：
步驟601：提供一基板，並在基板的上表面封裝多個晶片及多個分離器件；
步驟602：提供一散熱裝置，所述散熱裝置包括絕緣層和導熱層；
步驟603：將所述導熱層壓合於所述絕緣層上，形成層壓設置的絕緣層和導熱層；
步驟604：將所述絕緣層朝向所述基板的上表面，對所述散熱裝置加熱到第一溫度，並以第一壓力持續壓合第一時間至所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面；
步驟605：對所述散熱裝置加熱到第二溫度並持續第二時間，以對所述散熱裝置進行固化。
在本實施例中，在本實施例中，所述第一溫度為150度，所述第二溫度為175度，所述第一壓力為7-10Kgf/cm2，所述第一時間為30秒，所述第二時間為1小時。
可以理解，第5圖和第6圖所示方法實施例中各步驟中用到的工藝參數僅為示例性參數，並不能用於限制本發明的保護範圍。所述工藝參數可以根據所述絕緣層和導熱層所使用的材料的不同而適當改變。
所述系統級晶片封裝結構10通過在所述基板104的上表面設置所述包括絕緣層106和導熱層107的散熱裝置100，且通過熱壓工藝使得所述絕緣層106與所述多個晶片101、102、多個分立器件103的外表面及所述基板104的上表面緊密貼合，從而可以有效增加散熱面積，提升散熱均勻性，實現對所述多個晶片101、102、多個分立器件103的快速高效散熱。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10‧‧‧系統級晶片封裝結構
101、102‧‧‧晶片
103‧‧‧分立器件
104‧‧‧基板
105‧‧‧焊球
106‧‧‧絕緣層
107‧‧‧導熱層
40‧‧‧終端
20‧‧‧主機板
21‧‧‧焊盤
501～506、601～605‧‧‧步驟
第1圖是本發明實施例提供的系統級晶片封裝結構的剖面示意圖； 第2圖是本發明實施例提供的系統級晶片封裝結構的拆解示意圖； 第3圖是本發明實施例提供的系統級晶片封裝結構的散熱路徑示意圖； 第4圖是應用本發明實施例提供的系統級晶片封裝結構的終端的結構示意圖； 第5圖是本發明實施例提供的系統級晶片封裝結構的製造方法的流程示意圖； 第6圖是本發明實施例提供的系統級晶片封裝結構的製造方法的另一流程示意圖。

Claims (13)

  1. 一種晶片封裝結構，其特徵在於，包括基板、封裝於所述基板的上表面的多個晶片和多個分離器件、以及散熱裝置，所述散熱裝置包括層壓設置的絕緣層和導熱層，所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，用於將所述多個晶片及多個分立器件產生的熱量傳導至所述導熱層和所述基板上，以通過所述導熱層及所述基板將所述多個晶片及多個分立器件產生的熱量散除。
  2. 如請求項1所述的晶片封裝結構，其特徵在於，所述層壓設置的絕緣層和導熱層在垂直於所述基板的上表面的投影方向上重疊。
  3. 如請求項1所述的晶片封裝結構，其特徵在於，所述絕緣層還用於將所述多個晶片及多個分立器件產生的熱量傳導至空氣中，以直接通過所述絕緣層將所述多個晶片及多個分立器件產生的熱量散除。
  4. 如請求項1至3中任一項所述的晶片封裝結構，其特徵在於，所述絕緣層由可成形性的絕緣材料製成。
  5. 如請求項1述的晶片封裝結構，其特徵在於，所述導熱層由導熱材料和可成形性的絕緣材料製成。
  6. 如請求項5述的晶片封裝結構，其特徵在於，所述導熱材料均勻摻雜於所述可成形性的絕緣材料中。
  7. 如請求項5或6所述的晶片封裝結構，其特徵在於，所述導熱材料包括石墨烯、石墨片、氮化硼片中的一種或多種。
  8. 如請求項5或6所述的晶片封裝結構，其特徵在於，所述可成形性的絕緣材料包括環氧樹脂或聚醯亞胺中的至少一項。
  9. 如請求項1至3中任一項述的晶片封裝結構，其特徵在於，所述晶片包括引線鍵合晶片或倒裝晶片中的任一項。
  10. 如請求項1至3中任一項述的晶片封裝結構，其特徵在於，所述晶片封裝結構還包括多個焊球，所述多個焊球呈陣列設置於所述基板的下表面。
  11. 一種晶片封裝結構的製造方法，其特徵在於，包括： 提供一基板，並在基板的上表面封裝多個晶片及多個分離器件； 提供一散熱裝置，所述散熱裝置包括絕緣層和導熱層； 將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面。
  12. 如請求項11所述的方法，其特徵在於，所述將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，包括： 對所述絕緣層加熱到第一溫度，並以第一壓力持續壓合第一時間至完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面； 對所述絕緣層熱到第二溫度並持續第二時間，以對所述絕緣層進行固化； 對所述導熱層加熱到第三溫度，並以第二壓力持續壓合第三時間至所述導熱層貼合所述絕緣層的上表面； 對所述導熱層加熱到第四溫度並持續第四時間，以對所述導熱層進行固化。
  13. 如請求項11所述的方法，其特徵在於，所述將所述散熱裝置層壓設置於所述基板的上表面，並使所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面，包括： 將所述導熱層壓合於所述絕緣層上，形成層壓設置的絕緣層和導熱層作為所述散熱裝置； 將所述絕緣層朝向所述基板的上表面，對所述散熱裝置加熱到第一溫度，並以第一壓力持續壓合第一時間至所述絕緣層完全包覆並貼合所述多個晶片、多個分立器件的外表面及所述基板的上表面； 對所述散熱裝置加熱到第二溫度並持續第二時間，以對所述散熱裝置進行固化。
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