CN102683302A - 一种用于单芯片封装和系统级封装的散热结构 - Google Patents
一种用于单芯片封装和系统级封装的散热结构 Download PDFInfo
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Abstract
本发明公开了一种用于单芯片封装和系统级封装的散热结构,包括:位于基板与芯片之间的散热片,用于吸收芯片散发的热量,该散热片的上表面与芯片的下表面直接接触,下表面与基板的上表面直接接触;位于散热片四个端点的支撑结构,该支撑结构一端与散热片的上表面直接接触,另一端与散热器的下表面直接接触,用于将吸收自芯片的热量从散热片传导至散热器;以及位于芯片上方的散热器,用于散发经由散热片和支撑结构传导过来的热量。本发明提供的用于单芯片封装和系统级封装的散热结构,结构简单易实现,并能方便与其它散热方法相结合,在单芯片封装和系统级封装散热问题上,特别是大功耗芯片或系统封装有很好的应用前景。
Description
技术领域
本发明涉及微电子封装技术领域,涉及到单芯片封装、二维或三维多芯片系统级封装领域,具体为一种用于单芯片封装和系统级封装(SiP)的散热结构。
背景技术
随着微电子芯片高速度、高密度、高性能的发展,热管理成了微系统封装中的一个非常重要的问题。集成电路中的散热问题在许多应用中是很重要的,以CPU为代表的高性能单芯片的功耗已经超过了100W,散热将会直接影响芯片的设计性能。为适应人们对电子产品小型化、多功能、环保型等方向的需求,新型异质集成技术系统级封装(System-in-Package,SiP)为微电子新型技术的典型代表之一。越来越多的芯片采用二维平铺或三维堆叠的方式系统的集成在尺寸很小的封装内,系统封装内的热积累问题不容忽视。因此,微电子封装中的散热问题一直是封装设计的关键技术之一。
散热主要有对流、传导和辐射三种方式。常见的散热方法有被动散热方法和主动散热方法,其中被动散热方法一般包括散热器、导热孔等,主动散热方法一般包括风冷散热、水冷散热、气冷散热、液冷散热、热电制冷散热、热管散热等。
在上述散热方法中,热电制冷散热和热管散热等方法实现困难,成本高。液冷散热和气冷散热对制作工艺以及材料的要求比较苛刻,对散热通道的工艺性,可靠性要求很高,现有的一些技术还不成熟,成本也比较高。风冷散热技术成熟并且价格适中,成为最为常见且使用率最高的一种散热方法。
目前针对芯片或模块散热的研究主要集中在导热孔,埋入式散热片(heat spreader)以及传导性很好的热界面材料(TIM)三个方面。Intersilcorporation的Nirmal K.Sharma在“Package for integrated circuit withthermal vias and method thereof”(US006861283B2)基板中添加导热孔进行散热,将芯片或模块的散热问题转移到印制电路板(PCB),具有结构简单易实现的特点。这种方法将热管理问题转移到系统中,引起PCB系统上的热点集中。Advanced Semiconductor Engineering的Yaw-Yu Yang在“Heat spreader and semiconductor device package having the same”(US20050104201A1),Free scale Semiconductor的Chee Seng Foong等人在“Heat spreader for semiconductor package”(US 20080067645A1),ChipPAC的Taekeun Lee等人在“Plastic ball grid array package with integralheatsink”(US20070176289A1)等专利的研究都集中在将散热片埋入到塑封(molding compound)中提高引线键合封装的散热效率。由于散热片近距离甚至直接接触裸芯片,可以将热在最小的热阻路径上传导至散热片,因此具有散热效果好的特点。这种方式存在的主要问题是需要设计特制的塑封模具和采用先进的新型塑封设备,成本上会大大增加。
第三种采用TIM材料包围芯片与散热器连接的散热方法,如ViaTechnologies的Chi-hsing Hsu在“Chip Package and Manufacturing Methodthereof”(US 20080093733A1)中有详细阐述。为了达到很好的散热效果,需选用导热效果很好的TIM材料,成本问题也是该方法的主要略势。
基于对上述各种散热技术的研究,由于塑封材料热导率非常低,引线键合形式的芯片散热成为了散热技术研究的重点。
发明内容
(一)要解决的技术问题
为了满足日益增长单芯片和模块功耗带来的散热问题,本发明的主要目的在于提供一种用于单芯片封装和系统级封装的散热结构。
(二)技术方案
为达到上述目的,本发明提供了一种用于单芯片封装和系统级封装的散热结构,该散热结构包括:
位于基板与芯片之间的散热片,用于吸收芯片散发的热量,该散热片的上表面与芯片的下表面直接接触,下表面与基板的上表面直接接触;
位于散热片四个端点的支撑结构,该支撑结构一端与散热片的上表面直接接触,另一端与散热器的下表面直接接触,用于将吸收自芯片的热量从散热片传导至散热器;以及
位于芯片上方的散热器,用于散发经由散热片和支撑结构传导过来的热量。
上述方案中,所述散热片是能够起到导热作用的片状结构,由铜、铝、金或银,以及上述各种材料的合金制成。
上述方案中,所述支撑结构,采用铜、铝、金、银等金属材料或焊锡球,以及上述各种材料的合金制成。
上述方案中,所述散热器为带有翅片的散热器或异形的散热器。
上述方案中,所述散热器与所述支撑结构是一体成型结构。
上述方案中,所述散热器与所述支撑结构是分别成型结构。
上述方案中,所述芯片与所述基板之间采用引线键合或者倒装焊形式进行互联。
上述方案中,所述基板与印制电路板PCB之间采用球栅阵列BGA、引脚阵列PGA或平面栅格阵列LGA进行互联。
(三)有益效果
从上述技术方案可以看出,本发明具有以下有益效果:
1、本发明提供的用于单芯片封装和系统级封装的散热结构,将裸芯片正下方紧密接触大面积散热片结构,将热量更多的传导至散热器,经由系统风冷将热量直接带走,减少经由基板传导至PCB带来的系统热点问题。
2、本发明提供的用于单芯片封装和系统级封装的散热结构,为芯片或模块散热提供了除顶部、四周以外的第三个连接散热片的热传导方向。从机理上来说,增加了热传导的途径、面积以及热辐射,提高了散热效率。还可以灵活的与其它散热方式相结合,提高整体散热效果。
3、本发明提供的用于单芯片封装和系统级封装的散热结构,结构简单易实现,并能方便与其它散热方法相结合,在单芯片封装和系统级封装散热问题上,特别是大功耗芯片或系统封装有很好的应用前景。
附图说明
图1a是依照本发明第一实施例的用于单芯片封装和系统级封装的散热结构的剖视图;
图1b是依照本发明第一实施例的用于单芯片封装和系统级封装的散热结构横截面图;其中:
101-芯片;
102-引线键合线;
103-导热的支撑结构;
104-散热片结构;
105-基板球栅阵列(BGA)焊球;
106-基板介质层材料;
107-基板金属层;
108-用于粘接的TIM材料,包括导热胶,TIM1,TIM2等材料;
109-塑封;
110-散热器;
111-基板,包括106的介质层材料和107的金属层;
112-塑封边界;
113-用于避开打线的散热片开孔。
图2a是依照本发明第二实施例用于单芯片封装和系统级封装的散热结构的剖视图;
图2b是依照本发明第二实施例的用于单芯片封装和系统级封装的散热结构横截面图;其中:
201、214-芯片;
202-引线键合线;
204-散热片结构;
206-基板介质层材料;
207-基板金属层;
208-用于粘接的TIM材料,包括导热胶,TIM1,TIM2等材料;
209-塑封;
210-散热器;
211-基板,包括206的介质层材料和207的金属层;
212-塑封边界;
213-用于避开打线的散热片开孔。
215-导热的支撑焊球;
216-用于焊接的金属焊盘;
217-基板引脚阵列(PGA)引脚;
图3a是依照本发明第三实施例用于单芯片封装和系统级封装的散热结构的剖视图;
图3b是依照本发明第三实施例的用于单芯片封装和系统级封装的散热结构横截面图;其中:
301、314-芯片;
302-引线键合线;
304-散热片结构;
305-基板球栅阵列(BGA)焊球;
306-基板介质层材料;
307-基板金属层;
308-用于粘接的TIM材料,包括导热胶,TIM1,TIM2等材料;
309-塑封;
311-基板,包括306的介质层材料和307的金属层;
312-塑封边界;
313-用于避开打线的散热片开孔;
图4a至图4d为依照本发明实施例的仿真图;其中,仿真条件为:外部系统风扇风速1m/s,系统机柜为JEDEC的标准测试机柜,环境温度为20℃,芯片功耗8.8W;
图4a为普通封装散热系统时芯片温度分布图;
图4b为本发明散热片厚度为0.1mm时芯片温度分布图;
图4c为不同散热片厚度下芯片最高温度列表;
图4d为不同散热片厚度下芯片最高温度变化曲线图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。
本发明将裸芯片正下方紧密接触大面积散热片结构,将热量更多的传导至散热器,经由系统风冷将热量直接带走,减少经由基板传导至PCB带来的系统热点问题。为芯片或模块散热提供了除顶部、四周以外的第三个连接散热片的热传导方向。从机理上来说,增加了热传导的途径、面积以及热辐射,提高了散热效率。还可以灵活的与其它散热方式相结合,提高整体散热效果。
基于上述实现原理,本发明提供的这种用于单芯片封装和系统级封装的散热结构,包括散热片、支撑结构和散热器。其中,散热片位于基板与芯片之间,用于吸收芯片散发的热量,该散热片的上表面与芯片的下表面直接接触,下表面与基板的上表面直接接触;支撑结构位于散热片四个端点,该支撑结构一端与散热片的上表面直接接触,另一端与散热器的下表面直接接触,用于将吸收自芯片的热量从散热片传导至散热器;散热器位于芯片上方,用于散发经由散热片和支撑结构传导过来的热量。
其中,所述散热片是能够起到导热作用的片状结构,由铜、铝、金或银,以及上述各种材料的合金制成。散热片可以为基板表层大面积的覆铜层或用于为增加散热效率而附加的散热结构。散热片的总厚度取决于打线劈刀尺寸和散热效果。所述支撑结构采用铜、铝、金、银或焊锡球,以及上述各种材料的合金制成。支撑结构不但用于支撑散热器,而且还起到了热传导的作用。所述散热器为带有翅片的散热器或异形的散热器,散热器与支撑结构是一体成型结构,或者是分别成型结构。另外,该散热器与芯片之间具有塑封结构,该塑封结构包覆于芯片之上。芯片与基板之间采用引线键合或者倒装焊形式进行互联。基板与印制电路板(PCB)之间采用球栅阵列(BGA)、引脚阵列(PGA)或平面栅格阵列(LGA)进行互联。
在本发明的一个实施例中,将本发明的散热结构与系统风冷进行结合,对比传统散热方法,芯片最高温度降低了24℃。影响该结构散热效果的最主要因素是散热片上开孔的大小和位置。散热片上开孔是为了打线空间设计,开孔的大小和位置决定了孔间导体桥的等效热阻。导体桥越宽越短,等效热阻越小,散热效果越好。相反由于散热片材料的导热率很高,导致散热片厚度变化大小对散热效果影响不大,因此使用普通的基板表层大面积覆铜也能得到很好的散热效率。
将单芯片或多芯片正下方直接与散热片(heat spreader)接触,并通过具有导热效果的支撑结构将热传导至散热器(heat sink)。本发明为芯片或模块散热提供了除顶部、四周以外的第三个连接散热片的热传导方向,尽量减少热量经过基板传导至PCB带来的系统热点问题。该散热结构简单易实现,与现有常规制造工艺兼容,并具有与其它散热方法灵活相结合的特点。可广泛应用于单芯片或系统封装,尤其是大功耗封装的散热问题。
图1a和图1b分别是依照本发明第一实施例的用于单芯片封装和系统级封装的散热结构的剖视图和横截面图;其中,
图1a显示本发明散热结构剖面图。一款引线键合裸芯片101通过高导热率的TIM材料108表贴于散热片104上,散热片104与封装基板111直接接触。散热片104与四个支撑结构103通过TIM材料108相连,支撑结构103除支撑作用外还有良好的导热作用,采用铜、铝、金、银以及上述各种材料的合金制成。支撑结构103与散热器110通过TIM材料108相连。形成从裸芯片正下方到散热片,支撑结构和散热器构成的新的散热通道,能够将更多的芯片热量传导至散热器风冷散出,并减少基板和印制电路板PCB的热点问题。基板与PCB之间采用球栅阵列BGA。
图1b显示本发明散热结构俯视图。散热片上开孔113是为了打线空间设计,开孔的大小和位置决定了孔间导体桥的等效热阻和散热效果。112为芯片塑封边界,与支撑结构103的形状和位置有关。
图2a和图2b分别是依照本发明第二实施例用于单芯片封装和系统级封装的散热结构的剖视图和横截面图;其中:
图2a显示本发明散热结构剖面图。一款引线键合裸芯片201、214通过高导热率的TIM材料208平铺表贴于散热片204上,散热片204与封装基板211直接接触。散热片204与四个支撑焊球215通过焊盘216相连,支撑焊球215除支撑作用外还有良好的导热作用。支撑焊球215与散热器210通过焊盘216相连。形成从裸芯片正下方到散热片,支撑焊球和散热器构成新的散热通道,能够将更多的芯片热量传导至散热器风冷散出,并减少基板和印制电路板PCB的热点问题。基板与PCB之间采用引脚阵列PGA。
图2b显示本发明散热结构俯视图。散热片上开孔213是为了打线空间设计,开孔的大小和位置决定了孔间导体桥的等效热阻和散热效果。212为芯片塑封边界,与支撑焊球215的直径和位置有关。
图3a和图3b分别是依照本发明第三实施例用于单芯片封装和系统级封装的散热结构的剖视图和横截面图;其中:
图3a显示本发明散热结构剖面图。一款引线键合裸芯片301、314通过高导热率的TIM材料308平铺表贴于散热片204上,散热片304与封装基板311直接接触。散热片304与异形散热器318通过TIM材料308相连。形成从裸芯片正下方到散热片和散热器构成新的散热通道,能够将更多的芯片热量传导至散热器风冷散出,并减少基板和印制电路板PCB的热点问题。基板与PCB之间采用引脚阵列PGA。
图3b显示本发明散热结构俯视图。散热片上开孔313是为了打线空间设计,开孔的大小和位置决定了孔间导体桥的等效热阻和散热效果。312为芯片塑封边界,与异形散热器318的形状有关。
图4a至图4d为依照本发明实施例的仿真图;其中,仿真条件为:外部系统风扇风速1m/s,系统机柜为JEDEC的标准测试机柜,环境温度为20℃,芯片功耗8.8W;
图4a为普通封装散热系统时芯片温度分布图;
图4b为本发明散热片厚度为0.1mm时芯片温度分布图;
图4c为不同散热片厚度下芯片最高温度列表;
图4d为不同散热片厚度下芯片最高温度变化曲线图。
图4a-4d为本发明的封装散热结构和传统的封装散热结构对比仿真结果。仿真模型的参数和边界条件一定情况下,对温度分布云图,芯片最高温度等仿真结果进行总结和对比分析,具体描述如下:
图4a:采用传统的封装散热结构的芯片温度分布云图。芯片的最高温度为127.789℃,分布在芯片的中心处,最低温度为120.611℃,分布在芯片的四个边角处。
图4b:采用了本发明的封装散热结构的中芯片的温度分布云图。芯片的最高温度为103.128℃,同样分布在芯片的中心处,最低温度为95.7911℃,分布在芯片的四个边角处。
图4c:统计了不同散热片的厚度,传统封装散热结构和本发明散热结构下,芯片工作时的最高温度数据。
图4d:根据图4c所示的表格数据绘制的散热片的厚度与芯片的仿真结果中最高温度之间的关系,从图中可以看出,在本发明实例下,芯片最高温度在本发明散热结构下比传统散热结构下降了超过20摄氏度。当散热片在合适的开孔大小和位置下,本发明的散热结构散热片的厚度对其散热效率的影响不大,最高温度基本稳定在103.128℃。当厚度达到一定的数值如0.1mm且无开孔时对散热效率才会产生较大影响,芯片的最高温度由103.128℃降低到97.8549℃,但互连需求下对本发明散热片的开孔是必要的。
为突出本发明结构简单、易加工的特点,下面进一步介绍本发明提供的这种用于单芯片封装和系统级封装的散热结构的制作工艺,具体工艺步骤如下:
步骤1:基板加工,使用常规基板加工工艺。若使用表层大面积覆铜作为散热片时,外层表面处理需采用导热性能较好的镍金、镍钯金等材料,杜绝使用导热性能差的阻焊材料。若添加附加散热片时,可将散热片与基板用半固化片压合而成,表面处理材料同样需要高导热率材料。附加散热片由铜、铝、金或银,以及上述各种材料的合金制成。散热片厚度受打线劈刀尺寸所限。
步骤2:贴芯片:通过共晶和环氧两种方式,使用具有粘接作用的TIM材料将芯片贴合于添加了散热片的基板,选用TIM的导热率越高越好,例如:具有高导热率的导热银胶,导热银浆,导热胶带等。
步骤3:引线键合:使用常规键合工艺,深腔工艺,包括热压键合、超声键合、热超声键合等,塑封引线材料包括有金、铜、铝、银等金属丝。
步骤4:塑封:使用热压等塑封工艺形成对裸芯片的保护。
步骤5:添加支撑结构:支撑结构采用铜、铝、金、银等金属以及上述各种材料的合金材料时,可通过共晶和环氧两种方式,将支撑结构利用具有粘接作用的TIM材料固定于散热片之上,选用TIM材料与步骤2中TIM材料相同。当支撑结构为支撑焊球时,可使用植球和回流的方法将支撑焊球与散热片连接。
步骤6:添加散热器:散热器与支撑结构或支撑焊球的装配方式与步骤5类似。
本发明结构工艺实现与其它散热方法兼容,可以灵活的与其它散热结构相结合,例如埋入式散热片、添加导热孔等等。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (8)
1.一种用于单芯片封装和系统级封装的散热结构,其特征在于,该散热结构包括:
位于基板与芯片之间的散热片,用于吸收芯片散发的热量,该散热片的上表面与芯片的下表面直接接触,下表面与基板的上表面直接接触;
位于散热片四个端点的支撑结构,该支撑结构一端与散热片的上表面直接接触,另一端与散热器的下表面直接接触,用于将吸收自芯片的热量从散热片传导至散热器;以及
位于芯片上方的散热器,用于散发经由散热片和支撑结构传导过来的热量。
2.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述散热片是能够起到导热作用的片状结构,由铜、铝、金或银,以及上述各种材料的合金制成。
3.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述支撑结构,采用铜、铝、金、银或焊锡球,以及上述各种材料的合金制成。
4.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述散热器为带有翅片的散热器或异形的散热器。
5.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述散热器与所述支撑结构是一体成型结构。
6.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述散热器与所述支撑结构是分别成型结构。
7.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述芯片与所述基板之间采用引线键合或者倒装焊形式进行互联。
8.根据权利要求1所述的用于单芯片封装和系统级封装的散热结构,其特征在于,所述基板与印制电路板PCB之间采用球栅阵列BGA、引脚阵列PGA或平面栅格阵列LGA进行互联。
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