CN104810335B - 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法 - Google Patents

碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法 Download PDF

Info

Publication number
CN104810335B
CN104810335B CN201410643282.7A CN201410643282A CN104810335B CN 104810335 B CN104810335 B CN 104810335B CN 201410643282 A CN201410643282 A CN 201410643282A CN 104810335 B CN104810335 B CN 104810335B
Authority
CN
China
Prior art keywords
carbon nanotube
thermoplastic resin
thermosetting resin
nanotube sheet
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410643282.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN104810335A (zh
Inventor
织田卓哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Co Ltd
Original Assignee
Shinko Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Co Ltd filed Critical Shinko Electric Co Ltd
Publication of CN104810335A publication Critical patent/CN104810335A/zh
Application granted granted Critical
Publication of CN104810335B publication Critical patent/CN104810335B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24777—Edge feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
CN201410643282.7A 2014-01-23 2014-11-06 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法 Active CN104810335B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-010306 2014-01-23
JP2014010306A JP6261352B2 (ja) 2014-01-23 2014-01-23 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN104810335A CN104810335A (zh) 2015-07-29
CN104810335B true CN104810335B (zh) 2018-11-13

Family

ID=53545463

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410643282.7A Active CN104810335B (zh) 2014-01-23 2014-11-06 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法

Country Status (3)

Country Link
US (1) US9873825B2 (enExample)
JP (1) JP6261352B2 (enExample)
CN (1) CN104810335B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190021230A (ko) * 2016-06-28 2019-03-05 니폰 제온 가부시키가이샤 방열 장치
KR102546241B1 (ko) * 2016-10-05 2023-06-22 삼성전자주식회사 반도체 패키지
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
EP3585605A4 (en) * 2017-02-24 2020-12-09 Lintec Of America, Inc. NANOFIBER THERMAL CONDUCTING MATERIAL
KR102818348B1 (ko) * 2018-08-23 2025-06-10 가부시끼가이샤 레조낙 반도체 디바이스의 제조 방법, 열전도 시트, 및 열전도 시트의 제조 방법
JP7338738B2 (ja) * 2018-08-23 2023-09-05 株式会社レゾナック 半導体デバイスの製造方法、熱伝導シート、及び熱伝導シートの製造方法
US11915991B2 (en) * 2021-03-26 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having first heat spreader and second heat spreader and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1676568A (zh) * 2004-04-02 2005-10-05 清华大学 一种热界面材料及其制造方法
CN1841714A (zh) * 2005-03-29 2006-10-04 台湾积体电路制造股份有限公司 半导体元件封装结构
CN103227157A (zh) * 2012-01-25 2013-07-31 富士通株式会社 电子器件及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101054467B (zh) * 2006-04-14 2010-05-26 清华大学 碳纳米管复合材料及其制备方法
US7489033B2 (en) * 2006-11-10 2009-02-10 Intel Corporation Electronic assembly with hot spot cooling
CN103588984A (zh) * 2007-02-22 2014-02-19 道康宁公司 制备导电薄膜的方法和由该方法制得的制品
JP5104688B2 (ja) * 2007-10-22 2012-12-19 富士通株式会社 シート状構造体及びその製造方法並びに電子機器
JP5276565B2 (ja) * 2009-10-14 2013-08-28 新光電気工業株式会社 放熱用部品
JP5295932B2 (ja) 2009-11-02 2013-09-18 新光電気工業株式会社 半導体パッケージ及びその評価方法、並びにその製造方法
JP5842349B2 (ja) * 2011-03-18 2016-01-13 富士通株式会社 シート状構造体、シート状構造体の製造方法、電子機器及び電子機器の製造方法
JP5673325B2 (ja) 2011-04-20 2015-02-18 富士通株式会社 カーボンナノチューブの形成方法及び熱拡散装置
KR101332866B1 (ko) * 2012-02-16 2013-11-22 앰코 테크놀로지 코리아 주식회사 반도체 장치
JP5928181B2 (ja) * 2012-06-18 2016-06-01 富士通株式会社 電子機器の製造方法及び電子機器
US9041192B2 (en) * 2012-08-29 2015-05-26 Broadcom Corporation Hybrid thermal interface material for IC packages with integrated heat spreader

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1676568A (zh) * 2004-04-02 2005-10-05 清华大学 一种热界面材料及其制造方法
CN1841714A (zh) * 2005-03-29 2006-10-04 台湾积体电路制造股份有限公司 半导体元件封装结构
CN103227157A (zh) * 2012-01-25 2013-07-31 富士通株式会社 电子器件及其制造方法

Also Published As

Publication number Publication date
CN104810335A (zh) 2015-07-29
US9873825B2 (en) 2018-01-23
US20150206822A1 (en) 2015-07-23
JP6261352B2 (ja) 2018-01-17
JP2015138903A (ja) 2015-07-30

Similar Documents

Publication Publication Date Title
CN104810335B (zh) 碳纳米管片以及半导体装置、碳纳米管片的制造方法以及半导体装置的制造方法
KR102864411B1 (ko) 반도체 장치
CN101540302B (zh) 片结构和制造片结构的方法
JP5276565B2 (ja) 放熱用部品
CN111211059A (zh) 电子封装件及其制法与散热件
CN106847781B (zh) 功率模块封装及其制造方法
CN102856219B (zh) 用于把金属表面附着到载体的方法以及包装模块
CN113555329A (zh) 包含前侧热提取结构的功率放大器装置及其制造方法
CN114765142B (zh) 电子封装件及其制法
CN101425486A (zh) 一种封装结构
CN111492473A (zh) 半导体封装体及其制造方法
TWI242863B (en) Heat dissipating structure and semiconductor package with the heat dissipating structure
JP2001217340A (ja) 半導体装置及びその製造方法
JP6283293B2 (ja) カーボンナノチューブシートの製造方法
TW201640627A (zh) 電子裝置及其製法
JP2002033411A (ja) ヒートスプレッダ付き半導体装置及びその製造方法
JP2011187877A (ja) 半導体装置及びその製造方法
JP2016063178A (ja) 半導体装置及びその製造方法
CN112399699A (zh) 散热基板及其制作方法
JP5013116B2 (ja) シート状構造体及びその製造方法並びに電子機器
WO2015137109A1 (ja) 半導体装置の製造方法および半導体装置
CN108346630B (zh) 散热型封装结构
JP6223903B2 (ja) カーボンナノチューブシート及び電子機器とカーボンナノチューブシートの製造方法及び電子機器の製造方法
TWI721898B (zh) 半導體封裝結構
JP5808227B2 (ja) 放熱用部品、半導体パッケージ及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant