JP6253714B2 - 複数の半導体ウェハ上に複数の半導体デバイスを形成する方法 - Google Patents
複数の半導体ウェハ上に複数の半導体デバイスを形成する方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 561
- 235000012431 wafers Nutrition 0.000 title claims description 478
- 238000000034 method Methods 0.000 title claims description 144
- 239000000463 material Substances 0.000 claims description 84
- 239000000203 mixture Substances 0.000 claims description 68
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 66
- 230000004888 barrier function Effects 0.000 claims description 49
- 239000002019 doping agent Substances 0.000 claims description 45
- 230000000704 physical effect Effects 0.000 claims description 44
- 238000004140 cleaning Methods 0.000 claims description 36
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- 238000012545 processing Methods 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
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- 238000005259 measurement Methods 0.000 description 13
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000009827 uniform distribution Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
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- 150000004767 nitrides Chemical class 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
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- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66204—Diodes
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Description
VF(INOM)=VTH+RDIFF×INOM (1)
に従い近似させることができる。ここでVFは、順方向電圧を表し、INOMは、ショットキーダイオードに印加される公称電流を表し、VTHは、(ダイオードが導通し始める)ショットキーダイオードの閾値電圧を表し、また、RDIFFは、公称電流でのショットキーダイオードの微分抵抗を表す。
Claims (15)
- 複数の半導体ウェハ上に複数の半導体デバイスを形成する方法(100)において、
第1の半導体ウェハの表面上に、該第1の半導体ウェハの物理的特性の値に基づき選択された第1の材料組成を有している導電層を形成し、前記第1の半導体ウェハ上に形成された導電層と、前記第1の半導体ウェハと、の間にショットキーコンタクトを生じさせるステップ(102)と、
第2の半導体ウェハの表面上に、該第2の半導体ウェハの物理的特性の値に基づき選択された第2の材料組成を有している導電層を形成し、前記第2の半導体ウェハ上に形成された導電層と、前記第2の半導体ウェハと、の間にショットキーコンタクトを生じさせるステップ(104)と、
を備え、
前記第2の材料組成は、前記第1の材料組成とは異なり、
前記第1の材料組成は、前記第1の半導体ウェハの物理的特性の第1の値に対して選択されており、前記第2の材料組成は、前記物理的特性の第2の値に対して選択されており、前記物理的特性の第2の値は、前記物理的特性の第1の値とは異なる、
方法(100)。 - 複数の半導体ウェハ上に複数の半導体デバイスを形成する方法(100)において、
第1の半導体ウェハの表面上に、該第1の半導体ウェハの物理的特性の値に基づき選択された第1の材料組成を有している導電層を形成し、前記第1の半導体ウェハ上に形成された導電層と、前記第1の半導体ウェハと、の間にショットキーコンタクトを生じさせるステップ(102)と、
第2の半導体ウェハの表面上に、該第2の半導体ウェハの物理的特性の値に基づき選択された第2の材料組成を有している導電層を形成し、前記第2の半導体ウェハ上に形成された導電層と、前記第2の半導体ウェハと、の間にショットキーコンタクトを生じさせるステップ(104)と、
を備え、
前記第2の材料組成は、前記第1の材料組成とは異なり、
前記第1の半導体ウェハ上に形成される前記導電層を形成する前に、スパッタ洗浄プロセスによって、前記第1の半導体ウェハの表面を浄化するステップを更に備えており、前記スパッタ洗浄プロセスの処理時間は、前記第1の半導体ウェハの物理的特性の値に基づき選択されている、
方法(100)。 - 前記第1の材料組成及び前記第2の材料組成は、同一の成分を少なくとも1種含んでいる、
請求項1又は2に記載の方法。 - 前記第1の材料組成の少なくとも1種の成分の割合は、前記第2の材料組成における当該成分の割合とは、少なくとも5%異なる、
請求項1乃至3のいずれか1項に記載の方法。 - 前記第1の半導体ウェハ上に形成される半導体デバイスは、前記第2の半導体ウェハ上に形成される半導体デバイスと実質的に同一である、
請求項1乃至4のいずれか1項に記載の方法。 - 前記第1の半導体ウェハの物理的特性は、前記第1の半導体ウェハの厚さ、前記第1の半導体ウェハの1つの層の厚さ、前記第1の半導体ウェハのドーパント濃度、前記第1の半導体ウェハの1つの層のドーパント濃度及び前記第1の半導体ウェハのシート抵抗のうちの少なくとも1つである、
請求項1乃至5のいずれか1項に記載の方法。 - 前記第1の半導体ウェハの物理的な特性の値を求めるステップを更に備えている、
請求項1乃至6のいずれか1項に記載の方法。 - 前記第1の材料組成は、2つ以上の金属元素から成る合金、金属元素と非金属元素とを含んでいる組成、又は、金属元素と半導体元素と非金属元素とを含んでいる組成を有する、
請求項1乃至7のいずれか1項に記載の方法。 - 前記第1の半導体ウェハ上に形成される前記導電層は窒素を含み、前記第1の半導体ウェハ上に形成される導電層の窒素の濃度は、前記第1の半導体ウェハの物理的特性の値に基づき選択されている、
請求項1乃至8のいずれか1項に記載の方法。 - 前記第1の半導体ウェハ上に形成される導電層を形成するステップは、窒素を含有するスパッタガスを使用するスパッタプロセスを含み、前記第1の半導体ウェハ上に形成される前記導電層中の窒素の濃度は、前記スパッタガス中の窒素の分圧を調整することによって選択されている、
請求項9に記載の方法。 - 前記第1の半導体ウェハ上に形成される導電層と前記第1の半導体ウェハとの間のショットキーコンタクトのショットキーバリアが、前記第2の半導体ウェハ上に形成される導電層と前記第2の半導体ウェハとの間のショットキーコンタクトのショットキーバリアから少なくとも5%異なっているように、前記第1の材料組成及び前記第2の材料組成は選択されている、
請求項1乃至10のいずれか1項に記載の方法。 - 複数の半導体ウェハ上の複数の半導体デバイスのうちの幾つかの半導体デバイスはショットキーダイオードである、
請求項1乃至11のいずれか1項に記載の方法。 - 前記第1の半導体ウェハ上に形成されるショットキーダイオードの平均順方向電圧と、前記第2の半導体ウェハ上に形成されるショットキーダイオードの平均順方向電圧と、の差異が5%以下であるように、前記第1の材料組成及び前記第2の材料組成が選択される、
請求項12に記載の方法。 - 複数の半導体ウェハ上に複数の半導体デバイスを形成する方法(400)において、
第1の半導体ウェハの物理的特性の値に基づき選択された処理時間にわたり前記第1の半導体ウェハの表面に対して実施されるスパッタ洗浄プロセスによって、前記第1の半導体ウェハの表面から不純物を除去するステップ(402)と、
第2の半導体ウェハの物理的特性の値に基づき選択された処理時間にわたり前記第2の半導体ウェハの表面に対して実施されるスパッタ洗浄プロセスによって、前記第2の半導体ウェハの表面から不純物を除去するステップ(404)と、
を備え、
前記第1の半導体ウェハの表面に対して実施されるスパッタ洗浄プロセスの処理時間は、前記第2の半導体ウェハの表面に対して実施されるスパッタ洗浄プロセスの処理時間とは異なり、
更に、
前記第1の半導体ウェハの表面上に導電層を形成し、前記第1の半導体ウェハ上に形成された導電層と前記第1の半導体ウェハとの間にショットキーコンタクトを生じさせるステップと、
前記第2の半導体ウェハの表面上に導電層を形成し、前記第2の半導体ウェハ上に形成された導電層と前記第2の半導体ウェハとの間にショットキーコンタクトを生じさせるステップと、
を備えている、
方法(400)。 - 前記第1の半導体ウェハの表面に対して実施される前記スパッタ洗浄プロセスにおいて使用されるスパッタガスは、前記第1の半導体ウェハの物理的特性の値に基づき選択されている、
請求項14に記載の方法。
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