JP6230456B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6230456B2
JP6230456B2 JP2014057281A JP2014057281A JP6230456B2 JP 6230456 B2 JP6230456 B2 JP 6230456B2 JP 2014057281 A JP2014057281 A JP 2014057281A JP 2014057281 A JP2014057281 A JP 2014057281A JP 6230456 B2 JP6230456 B2 JP 6230456B2
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Japan
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gan
semiconductor layer
based semiconductor
layer
electrode
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Japanese (ja)
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JP2015179785A5 (enExample
JP2015179785A (ja
Inventor
雅彦 蔵口
雅彦 蔵口
尚史 齋藤
尚史 齋藤
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Toshiba Corp
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Toshiba Corp
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Priority to JP2014057281A priority Critical patent/JP6230456B2/ja
Priority to KR1020150030373A priority patent/KR101787820B1/ko
Priority to US14/657,722 priority patent/US10026804B2/en
Publication of JP2015179785A publication Critical patent/JP2015179785A/ja
Publication of JP2015179785A5 publication Critical patent/JP2015179785A5/ja
Application granted granted Critical
Publication of JP6230456B2 publication Critical patent/JP6230456B2/ja
Priority to US16/008,745 priority patent/US10714566B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
JP2014057281A 2014-03-19 2014-03-19 半導体装置 Active JP6230456B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014057281A JP6230456B2 (ja) 2014-03-19 2014-03-19 半導体装置
KR1020150030373A KR101787820B1 (ko) 2014-03-19 2015-03-04 반도체 장치
US14/657,722 US10026804B2 (en) 2014-03-19 2015-03-13 Semiconductor device
US16/008,745 US10714566B2 (en) 2014-03-19 2018-06-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014057281A JP6230456B2 (ja) 2014-03-19 2014-03-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2015179785A JP2015179785A (ja) 2015-10-08
JP2015179785A5 JP2015179785A5 (enExample) 2016-09-15
JP6230456B2 true JP6230456B2 (ja) 2017-11-15

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JP2014057281A Active JP6230456B2 (ja) 2014-03-19 2014-03-19 半導体装置

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US (2) US10026804B2 (enExample)
JP (1) JP6230456B2 (enExample)
KR (1) KR101787820B1 (enExample)

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CN106876457B (zh) * 2017-01-11 2020-08-21 西安电子科技大学 一种槽栅增强型MIS结构AlGaN/GaN异质结场效应晶体管
CN106783961A (zh) * 2017-01-11 2017-05-31 西安电子科技大学 一种具有部分P型GaN帽层的AlGaN/GaN异质结场效应晶体管
CN106876458B (zh) * 2017-01-11 2020-08-21 西安电子科技大学 一种槽栅增强型AlGaN/GaN异质结场效应晶体管
EP3658872B1 (en) * 2017-07-24 2022-01-05 MACOM Technology Solutions Holdings, Inc. Fet operational temperature determination by resistance thermometry
JP7082508B2 (ja) * 2018-03-22 2022-06-08 ローム株式会社 窒化物半導体装置
JP7021034B2 (ja) * 2018-09-18 2022-02-16 株式会社東芝 半導体装置
US11316038B2 (en) * 2018-11-20 2022-04-26 Stmicroelectronics S.R.L. HEMT transistor with adjusted gate-source distance, and manufacturing method thereof
CN111834436A (zh) * 2019-04-17 2020-10-27 世界先进积体电路股份有限公司 半导体结构及其形成方法
JP7448314B2 (ja) * 2019-04-19 2024-03-12 株式会社東芝 半導体装置
CN111987141A (zh) * 2019-05-22 2020-11-24 世界先进积体电路股份有限公司 半导体装置及其制造方法
US11398546B2 (en) * 2019-08-06 2022-07-26 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
CN110660851A (zh) * 2019-10-08 2020-01-07 电子科技大学 一种高压n沟道HEMT器件
CN110649096B (zh) * 2019-10-08 2021-06-04 电子科技大学 一种高压n沟道HEMT器件
CN110649097B (zh) * 2019-10-08 2021-04-02 电子科技大学 一种高压p沟道HFET器件
CN110660843A (zh) * 2019-10-08 2020-01-07 电子科技大学 一种高压p沟道HEMT器件
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CN113875019B (zh) 2020-04-30 2024-07-02 英诺赛科(苏州)半导体有限公司 半导体器件以及制造半导体器件的方法
CN112786700A (zh) * 2020-04-30 2021-05-11 英诺赛科(苏州)半导体有限公司 半导体器件
CN112331719B (zh) * 2020-04-30 2022-09-13 英诺赛科(苏州)半导体有限公司 半导体器件以及制造半导体器件的方法
FR3110770B1 (fr) * 2020-05-19 2022-04-29 Commissariat Energie Atomique Composant électronique à hétérojonction comprenant une plaque de champ et une région flottante dopée p
US12051739B2 (en) 2020-07-02 2024-07-30 Innoscience (Zhuhai) Technology Co., Ltd. Package structure having a first connection circuit and manufacturing method thereof
FR3115156B1 (fr) * 2020-10-09 2022-08-26 Commissariat Energie Atomique Transistor à nitrure de gallium
CN112599589B (zh) * 2020-12-17 2023-01-17 中国科学院微电子研究所 一种半导体器件及制备方法
TWI798728B (zh) * 2021-06-23 2023-04-11 新唐科技股份有限公司 半導體結構及其製造方法
US20230101543A1 (en) * 2021-09-30 2023-03-30 Texas Instruments Incorporated Gallium-nitride device field-plate system
CN115547990A (zh) * 2022-08-15 2022-12-30 河源市众拓光电科技有限公司 抗辐照氮化镓基场效应管及其制备方法
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Also Published As

Publication number Publication date
US20150270379A1 (en) 2015-09-24
KR20150109262A (ko) 2015-10-01
JP2015179785A (ja) 2015-10-08
US10714566B2 (en) 2020-07-14
US20180301527A1 (en) 2018-10-18
KR101787820B1 (ko) 2017-10-18
US10026804B2 (en) 2018-07-17

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