JP6218462B2 - ワイドギャップ半導体装置 - Google Patents

ワイドギャップ半導体装置 Download PDF

Info

Publication number
JP6218462B2
JP6218462B2 JP2013140348A JP2013140348A JP6218462B2 JP 6218462 B2 JP6218462 B2 JP 6218462B2 JP 2013140348 A JP2013140348 A JP 2013140348A JP 2013140348 A JP2013140348 A JP 2013140348A JP 6218462 B2 JP6218462 B2 JP 6218462B2
Authority
JP
Japan
Prior art keywords
gap semiconductor
wide gap
layer
mosfet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013140348A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015015329A5 (enExample
JP2015015329A (ja
Inventor
英介 末川
英介 末川
直斗 鹿口
直斗 鹿口
雅明 池上
雅明 池上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013140348A priority Critical patent/JP6218462B2/ja
Priority to US14/223,099 priority patent/US9472543B2/en
Priority to KR1020140074047A priority patent/KR101596235B1/ko
Priority to DE102014211903.0A priority patent/DE102014211903B4/de
Priority to CN201410320367.1A priority patent/CN104282686B/zh
Publication of JP2015015329A publication Critical patent/JP2015015329A/ja
Publication of JP2015015329A5 publication Critical patent/JP2015015329A5/ja
Application granted granted Critical
Publication of JP6218462B2 publication Critical patent/JP6218462B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/667—Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/669—Vertical DMOS [VDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2013140348A 2013-07-04 2013-07-04 ワイドギャップ半導体装置 Active JP6218462B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013140348A JP6218462B2 (ja) 2013-07-04 2013-07-04 ワイドギャップ半導体装置
US14/223,099 US9472543B2 (en) 2013-07-04 2014-03-24 Wide band gap semiconductor device
KR1020140074047A KR101596235B1 (ko) 2013-07-04 2014-06-18 와이드 갭 반도체장치
DE102014211903.0A DE102014211903B4 (de) 2013-07-04 2014-06-20 Halbleitervorrichtung mit breiter Bandlücke
CN201410320367.1A CN104282686B (zh) 2013-07-04 2014-07-04 宽带隙半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013140348A JP6218462B2 (ja) 2013-07-04 2013-07-04 ワイドギャップ半導体装置

Publications (3)

Publication Number Publication Date
JP2015015329A JP2015015329A (ja) 2015-01-22
JP2015015329A5 JP2015015329A5 (enExample) 2016-03-10
JP6218462B2 true JP6218462B2 (ja) 2017-10-25

Family

ID=52106491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013140348A Active JP6218462B2 (ja) 2013-07-04 2013-07-04 ワイドギャップ半導体装置

Country Status (5)

Country Link
US (1) US9472543B2 (enExample)
JP (1) JP6218462B2 (enExample)
KR (1) KR101596235B1 (enExample)
CN (1) CN104282686B (enExample)
DE (1) DE102014211903B4 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015040662A1 (ja) * 2013-09-17 2015-03-26 三菱電機株式会社 半導体装置
DE102014116625B4 (de) * 2014-11-13 2020-06-18 Infineon Technologies Austria Ag Vertikale Halbleitervorrichtung und Verfahren für deren Herstellung
US10705123B2 (en) * 2015-12-18 2020-07-07 Rohm Co., Ltd. SiC semiconductor device with current sensing capability
WO2018008068A1 (ja) * 2016-07-04 2018-01-11 三菱電機株式会社 半導体装置の製造方法
WO2019092872A1 (ja) * 2017-11-13 2019-05-16 新電元工業株式会社 ワイドギャップ半導体装置
JP7121547B2 (ja) * 2018-06-04 2022-08-18 株式会社豊田中央研究所 半導体装置
JP7145817B2 (ja) * 2019-06-14 2022-10-03 日立Astemo株式会社 半導体装置
WO2022208610A1 (ja) * 2021-03-29 2022-10-06 三菱電機株式会社 半導体装置、半導体装置の製造方法、及び、半導体装置の交換方法
JP7686589B2 (ja) * 2022-02-25 2025-06-02 株式会社日立製作所 半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648674A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Vertical mos-fet
JPH09119870A (ja) * 1995-10-26 1997-05-06 Nec Corp 温度検出方法、半導体装置及び温度検出回路
JPH09162399A (ja) * 1995-12-12 1997-06-20 Toshiba Corp 半導体装置
US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices
JP3123930B2 (ja) 1996-08-20 2001-01-15 日本電気株式会社 半導体装置
US6545316B1 (en) 2000-06-23 2003-04-08 Silicon Wireless Corporation MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
US7098506B2 (en) * 2000-06-28 2006-08-29 Renesas Technology Corp. Semiconductor device and method for fabricating the same
JP2001274402A (ja) 2000-03-24 2001-10-05 Toshiba Corp パワー半導体装置
US6465308B1 (en) * 2001-05-24 2002-10-15 Taiwan Semiconductor Manufacturing Company Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant
JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
JP4770115B2 (ja) 2003-12-24 2011-09-14 住友電気工業株式会社 半導体装置および半導体装置の製造方法
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4645705B2 (ja) * 2008-08-29 2011-03-09 ソニー株式会社 半導体装置及び半導体装置の製造方法
JP2012094555A (ja) * 2009-02-18 2012-05-17 Mitsubishi Electric Corp 半導体装置の製造方法
JP5343904B2 (ja) * 2010-03-23 2013-11-13 住友電気工業株式会社 半導体装置
JP2012054378A (ja) 2010-09-01 2012-03-15 Renesas Electronics Corp 半導体装置
JP5372257B2 (ja) * 2010-09-03 2013-12-18 三菱電機株式会社 半導体装置
JP5961865B2 (ja) * 2010-09-15 2016-08-02 ローム株式会社 半導体素子
CN102693981A (zh) * 2012-06-25 2012-09-26 吉林华微电子股份有限公司 终端为ldmos的高压vdmos管

Also Published As

Publication number Publication date
US20150008450A1 (en) 2015-01-08
US9472543B2 (en) 2016-10-18
KR101596235B1 (ko) 2016-02-22
CN104282686B (zh) 2017-05-17
KR20150005443A (ko) 2015-01-14
DE102014211903B4 (de) 2017-08-10
JP2015015329A (ja) 2015-01-22
CN104282686A (zh) 2015-01-14
DE102014211903A1 (de) 2015-01-08

Similar Documents

Publication Publication Date Title
JP6021032B2 (ja) 半導体素子およびその製造方法
KR101596235B1 (ko) 와이드 갭 반도체장치
US10964686B2 (en) Semiconductor device and method of manufacturing semiconductor device
CN102646708B (zh) 超结半导体器件
JP4772843B2 (ja) 半導体装置及びその製造方法
US9620595B2 (en) Semiconductor device
JP6526981B2 (ja) 半導体装置および半導体モジュール
JP5968548B2 (ja) 半導体装置
CN110120392B (zh) 碳化硅半导体装置
WO2017098547A1 (ja) 炭化珪素半導体装置
US9721939B2 (en) Semiconductor device
TWI717713B (zh) 寬頻隙半導體裝置
JP6338776B2 (ja) 半導体装置
JPH03180074A (ja) 半導体装置
JP2009099911A (ja) 半導体装置
JP4820899B2 (ja) 半導体装置
JP2009032968A (ja) 半導体装置及びその製造方法
CN119584609A (zh) 半导体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160120

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170309

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170829

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170926

R150 Certificate of patent or registration of utility model

Ref document number: 6218462

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250