JP6215919B2 - ジルコニア粒子を含むcmp組成物および使用方法 - Google Patents
ジルコニア粒子を含むcmp組成物および使用方法 Download PDFInfo
- Publication number
- JP6215919B2 JP6215919B2 JP2015514101A JP2015514101A JP6215919B2 JP 6215919 B2 JP6215919 B2 JP 6215919B2 JP 2015514101 A JP2015514101 A JP 2015514101A JP 2015514101 A JP2015514101 A JP 2015514101A JP 6215919 B2 JP6215919 B2 JP 6215919B2
- Authority
- JP
- Japan
- Prior art keywords
- cmp composition
- composition
- mass
- substrate
- cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
- H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/477,535 US8778212B2 (en) | 2012-05-22 | 2012-05-22 | CMP composition containing zirconia particles and method of use |
| US13/477,535 | 2012-05-22 | ||
| PCT/US2013/041947 WO2013177110A1 (en) | 2012-05-22 | 2013-05-21 | Cmp composition containing zirconia particles and method of use |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015522669A JP2015522669A (ja) | 2015-08-06 |
| JP2015522669A5 JP2015522669A5 (https=) | 2016-07-07 |
| JP6215919B2 true JP6215919B2 (ja) | 2017-10-18 |
Family
ID=49620778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015514101A Active JP6215919B2 (ja) | 2012-05-22 | 2013-05-21 | ジルコニア粒子を含むcmp組成物および使用方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8778212B2 (https=) |
| EP (1) | EP2852650B1 (https=) |
| JP (1) | JP6215919B2 (https=) |
| KR (1) | KR102135224B1 (https=) |
| CN (1) | CN104334674B (https=) |
| TW (1) | TWI484008B (https=) |
| WO (1) | WO2013177110A1 (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8974561B2 (en) * | 2011-09-30 | 2015-03-10 | Hoya Corporation | Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording / reproducing device |
| JP6719452B2 (ja) * | 2015-03-30 | 2020-07-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2017005050A (ja) * | 2015-06-08 | 2017-01-05 | 信越化学工業株式会社 | 研磨組成物及びその製造方法並びに研磨方法 |
| US20170066944A1 (en) * | 2015-09-03 | 2017-03-09 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
| KR102574851B1 (ko) * | 2015-12-17 | 2023-09-06 | 솔브레인 주식회사 | 화학기계적 연마 슬러리 조성물 |
| KR101761789B1 (ko) * | 2015-12-24 | 2017-07-26 | 주식회사 케이씨텍 | 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물 |
| CN106928859A (zh) * | 2015-12-31 | 2017-07-07 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液及其应用 |
| CN107587136A (zh) * | 2017-07-19 | 2018-01-16 | 合肥普庆新材料科技有限公司 | 一种粘度稳定的擦铜膏 |
| US11186748B2 (en) | 2017-09-28 | 2021-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them |
| US10711158B2 (en) | 2017-09-28 | 2020-07-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them |
| US10508221B2 (en) | 2017-09-28 | 2019-12-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them |
| US10584265B2 (en) | 2017-09-28 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them |
| TW201936508A (zh) * | 2018-02-26 | 2019-09-16 | 日商丸善石油化學股份有限公司 | 表面修飾粒子及其製造方法 |
| KR102024758B1 (ko) | 2018-05-26 | 2019-09-25 | 에스케이이노베이션 주식회사 | 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물 |
| KR102005963B1 (ko) | 2018-05-26 | 2019-07-31 | 에스케이이노베이션 주식회사 | 식각액 조성물 및 실란화합물 |
| KR102258307B1 (ko) * | 2018-09-03 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| US10982144B2 (en) * | 2018-09-03 | 2021-04-20 | Enf Technology Co., Ltd. | Silicon nitride layer etching composition and etching method using the same |
| US20210269674A1 (en) | 2020-02-28 | 2021-09-02 | Fujimi Corporation | Polishing composition containing zirconia particles and an oxidizer |
| KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| JP7739305B2 (ja) * | 2020-09-04 | 2025-09-16 | 花王株式会社 | 基板の洗浄方法 |
| KR102410845B1 (ko) * | 2021-01-08 | 2022-06-22 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
| KR102638622B1 (ko) * | 2021-07-22 | 2024-02-19 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법 |
| KR20230141967A (ko) * | 2022-03-29 | 2023-10-10 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물, 연마 방법 및 반도체 기판의 제조 방법 |
| KR20230172348A (ko) * | 2022-06-15 | 2023-12-22 | 에스케이엔펄스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
| TWI873734B (zh) * | 2022-07-29 | 2025-02-21 | 美商聖高拜陶器塑膠公司 | 用於進行材料移除操作之組成物及方法 |
| EP4612246A1 (en) * | 2022-12-12 | 2025-09-10 | Saint-Gobain Ceramics&Plastics, Inc. | Composition and method for conducting a material removing operation |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| JP3303544B2 (ja) * | 1994-07-27 | 2002-07-22 | ソニー株式会社 | 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| KR100447551B1 (ko) * | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
| US6582623B1 (en) | 1999-07-07 | 2003-06-24 | Cabot Microelectronics Corporation | CMP composition containing silane modified abrasive particles |
| TW503154B (en) * | 2000-02-04 | 2002-09-21 | Showa Denko Kk | LSI device polishing composition and method for reproducing LSI device |
| US6646348B1 (en) | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
| JP2002170790A (ja) * | 2000-11-30 | 2002-06-14 | Showa Denko Kk | 半導体基板研磨用組成物、半導体配線基板およびその製造方法 |
| WO2002061810A1 (en) * | 2001-01-16 | 2002-08-08 | Cabot Microelectronics Corporation | Ammonium oxalate-containing polishing system and method |
| TW568944B (en) * | 2001-01-16 | 2004-01-01 | Cabot Microelectronics Corp | Ammonium oxalate-containing polishing system and method |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
| US6803353B2 (en) * | 2002-11-12 | 2004-10-12 | Atofina Chemicals, Inc. | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| KR100630678B1 (ko) | 2003-10-09 | 2006-10-02 | 삼성전자주식회사 | 알루미늄막의 화학적 기계적 연마용 슬러리, 그 슬러리를사용하는 화학적 기계적 연마 방법 및 그 방법을 사용하는알루미늄 배선 형성방법 |
| KR100611466B1 (ko) * | 2003-12-30 | 2006-08-09 | 제일모직주식회사 | 구리 배선 연마용 cmp 슬러리 |
| DE102004004147A1 (de) | 2004-01-28 | 2005-08-18 | Degussa Ag | Oberflächenmodifizierte, mit Siliziumdioxid umhüllte Metalloid/Metalloxide |
| US20060108325A1 (en) | 2004-11-19 | 2006-05-25 | Everson William J | Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers |
| EP1838795A2 (en) * | 2005-01-07 | 2007-10-03 | Dynea Chemicals OY | Engineered non-polymeric organic particles for chemical mechanical planarization |
| US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
| KR100734305B1 (ko) * | 2006-01-17 | 2007-07-02 | 삼성전자주식회사 | 디싱 현상 없이 평탄화된 막을 구비하는 반도체 소자의제조방법 및 그에 의해 제조된 반도체 소자 |
| JP2007214155A (ja) * | 2006-02-07 | 2007-08-23 | Fujifilm Corp | バリア用研磨液及び化学的機械的研磨方法 |
| US7732393B2 (en) | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
| US7294576B1 (en) | 2006-06-29 | 2007-11-13 | Cabot Microelectronics Corporation | Tunable selectivity slurries in CMP applications |
| KR101032504B1 (ko) | 2006-06-30 | 2011-05-04 | 주식회사 엘지화학 | Cmp 슬러리 |
| US8137580B2 (en) | 2006-12-29 | 2012-03-20 | Lg Chem, Ltd. | CMP slurry composition for forming metal wiring line |
| KR20100037107A (ko) | 2007-06-15 | 2010-04-08 | 바스프 에스이 | 구리 화학적 기계적 평탄화를 위한, 콜로이드성 입자, 고분자 전해질 및 이온성 첨가제를 사용하는 부동태화 필름 특성의 제어 |
| US20090056231A1 (en) | 2007-08-28 | 2009-03-05 | Daniela White | Copper CMP composition containing ionic polyelectrolyte and method |
| JP5646996B2 (ja) * | 2007-09-21 | 2014-12-24 | キャボット マイクロエレクトロニクス コーポレイション | 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法 |
| EP2197972B1 (en) * | 2007-09-21 | 2020-04-01 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| US20090124173A1 (en) | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
| US8435421B2 (en) | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| WO2009133793A1 (ja) | 2008-05-01 | 2009-11-05 | Jsr株式会社 | 化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法 |
| JP2010080864A (ja) * | 2008-09-29 | 2010-04-08 | Fujifilm Corp | 研磨液 |
| US20110259556A1 (en) * | 2008-11-18 | 2011-10-27 | Georg Gallmetzer | Device for generating combustible product gas from carbonaceous feedstocks |
| CN101586005A (zh) * | 2009-07-03 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | SiSb基相变材料用化学机械抛光液 |
-
2012
- 2012-05-22 US US13/477,535 patent/US8778212B2/en active Active
-
2013
- 2013-05-13 TW TW102116906A patent/TWI484008B/zh active
- 2013-05-21 EP EP13793438.6A patent/EP2852650B1/en active Active
- 2013-05-21 KR KR1020147035430A patent/KR102135224B1/ko active Active
- 2013-05-21 JP JP2015514101A patent/JP6215919B2/ja active Active
- 2013-05-21 WO PCT/US2013/041947 patent/WO2013177110A1/en not_active Ceased
- 2013-05-21 CN CN201380026721.3A patent/CN104334674B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013177110A1 (en) | 2013-11-28 |
| CN104334674A (zh) | 2015-02-04 |
| EP2852650B1 (en) | 2020-07-29 |
| TWI484008B (zh) | 2015-05-11 |
| US20130313225A1 (en) | 2013-11-28 |
| JP2015522669A (ja) | 2015-08-06 |
| KR20150014974A (ko) | 2015-02-09 |
| TW201406888A (zh) | 2014-02-16 |
| US8778212B2 (en) | 2014-07-15 |
| CN104334674B (zh) | 2016-08-17 |
| KR102135224B1 (ko) | 2020-07-17 |
| EP2852650A1 (en) | 2015-04-01 |
| EP2852650A4 (en) | 2016-02-24 |
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