KR102135224B1 - 지르코니아 입자 함유 ｃｍｐ 조성물 및 사용 방법 - Google Patents

지르코니아 입자 함유 ｃｍｐ 조성물 및 사용 방법 Download PDF

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Publication number
KR102135224B1
KR102135224B1 KR1020147035430A KR20147035430A KR102135224B1 KR 102135224 B1 KR102135224 B1 KR 102135224B1 KR 1020147035430 A KR1020147035430 A KR 1020147035430A KR 20147035430 A KR20147035430 A KR 20147035430A KR 102135224 B1 KR102135224 B1 KR 102135224B1
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South Korea
Prior art keywords
cmp composition
composition
substrate
weight
polishing
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Korean (ko)
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KR20150014974A (ko
Inventor
위창 진
존 파커
엘리자베스 렘센
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20150014974A publication Critical patent/KR20150014974A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020147035430A 2012-05-22 2013-05-21 지르코니아 입자 함유 ｃｍｐ 조성물 및 사용 방법 Active KR102135224B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/477,535 US8778212B2 (en) 2012-05-22 2012-05-22 CMP composition containing zirconia particles and method of use
US13/477,535 2012-05-22
PCT/US2013/041947 WO2013177110A1 (en) 2012-05-22 2013-05-21 Cmp composition containing zirconia particles and method of use

Publications (2)

Publication Number Publication Date
KR20150014974A KR20150014974A (ko) 2015-02-09
KR102135224B1 true KR102135224B1 (ko) 2020-07-17

Family

ID=49620778

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147035430A Active KR102135224B1 (ko) 2012-05-22 2013-05-21 지르코니아 입자 함유 ｃｍｐ 조성물 및 사용 방법

Country Status (7)

Country Link
US (1) US8778212B2 (https=)
EP (1) EP2852650B1 (https=)
JP (1) JP6215919B2 (https=)
KR (1) KR102135224B1 (https=)
CN (1) CN104334674B (https=)
TW (1) TWI484008B (https=)
WO (1) WO2013177110A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8974561B2 (en) * 2011-09-30 2015-03-10 Hoya Corporation Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic recording / reproducing device
JP6719452B2 (ja) * 2015-03-30 2020-07-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP2017005050A (ja) * 2015-06-08 2017-01-05 信越化学工業株式会社 研磨組成物及びその製造方法並びに研磨方法
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR101761789B1 (ko) * 2015-12-24 2017-07-26 주식회사 케이씨텍 첨가제 조성물 및 이를 포함하는 포지티브 연마 슬러리 조성물
CN106928859A (zh) * 2015-12-31 2017-07-07 安集微电子科技(上海)有限公司 一种化学机械抛光液及其应用
CN107587136A (zh) * 2017-07-19 2018-01-16 合肥普庆新材料科技有限公司 一种粘度稳定的擦铜膏
US11186748B2 (en) 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10711158B2 (en) 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10584265B2 (en) 2017-09-28 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
TW201936508A (zh) * 2018-02-26 2019-09-16 日商丸善石油化學股份有限公司 表面修飾粒子及其製造方法
KR102024758B1 (ko) 2018-05-26 2019-09-25 에스케이이노베이션 주식회사 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물
KR102005963B1 (ko) 2018-05-26 2019-07-31 에스케이이노베이션 주식회사 식각액 조성물 및 실란화합물
KR102258307B1 (ko) * 2018-09-03 2021-06-01 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물 및 이를 이용한 방법
US10982144B2 (en) * 2018-09-03 2021-04-20 Enf Technology Co., Ltd. Silicon nitride layer etching composition and etching method using the same
US20210269674A1 (en) 2020-02-28 2021-09-02 Fujimi Corporation Polishing composition containing zirconia particles and an oxidizer
KR102623640B1 (ko) * 2020-07-22 2024-01-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
JP7739305B2 (ja) * 2020-09-04 2025-09-16 花王株式会社 基板の洗浄方法
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
KR102638622B1 (ko) * 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR20230141967A (ko) * 2022-03-29 2023-10-10 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 연마 방법 및 반도체 기판의 제조 방법
KR20230172348A (ko) * 2022-06-15 2023-12-22 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
TWI873734B (zh) * 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
EP4612246A1 (en) * 2022-12-12 2025-09-10 Saint-Gobain Ceramics&Plastics, Inc. Composition and method for conducting a material removing operation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100504359B1 (ko) * 2000-02-04 2005-07-28 쇼와 덴코 가부시키가이샤 Ｌｓｉ 디바이스 연마용 조성물 및 ｌｓｉ 디바이스의제조 방법

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
JP3303544B2 (ja) * 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
US6582623B1 (en) 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
US6646348B1 (en) 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP2002170790A (ja) * 2000-11-30 2002-06-14 Showa Denko Kk 半導体基板研磨用組成物、半導体配線基板およびその製造方法
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
TW568944B (en) * 2001-01-16 2004-01-01 Cabot Microelectronics Corp Ammonium oxalate-containing polishing system and method
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6755721B2 (en) * 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
KR100630678B1 (ko) 2003-10-09 2006-10-02 삼성전자주식회사 알루미늄막의 화학적 기계적 연마용 슬러리, 그 슬러리를사용하는 화학적 기계적 연마 방법 및 그 방법을 사용하는알루미늄 배선 형성방법
KR100611466B1 (ko) * 2003-12-30 2006-08-09 제일모직주식회사 구리 배선 연마용 ｃｍｐ 슬러리
DE102004004147A1 (de) 2004-01-28 2005-08-18 Degussa Ag Oberflächenmodifizierte, mit Siliziumdioxid umhüllte Metalloid/Metalloxide
US20060108325A1 (en) 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
EP1838795A2 (en) * 2005-01-07 2007-10-03 Dynea Chemicals OY Engineered non-polymeric organic particles for chemical mechanical planarization
US7265055B2 (en) * 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
KR100734305B1 (ko) * 2006-01-17 2007-07-02 삼성전자주식회사 디싱 현상 없이 평탄화된 막을 구비하는 반도체 소자의제조방법 및 그에 의해 제조된 반도체 소자
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法
US7732393B2 (en) 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
US7294576B1 (en) 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications
KR101032504B1 (ko) 2006-06-30 2011-05-04 주식회사 엘지화학 Ｃｍｐ 슬러리
US8137580B2 (en) 2006-12-29 2012-03-20 Lg Chem, Ltd. CMP slurry composition for forming metal wiring line
KR20100037107A (ko) 2007-06-15 2010-04-08 바스프 에스이 구리 화학적 기계적 평탄화를 위한, 콜로이드성 입자, 고분자 전해질 및 이온성 첨가제를 사용하는 부동태화 필름 특성의 제어
US20090056231A1 (en) 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
JP5646996B2 (ja) * 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
EP2197972B1 (en) * 2007-09-21 2020-04-01 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
US20090124173A1 (en) 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
US8435421B2 (en) 2007-11-27 2013-05-07 Cabot Microelectronics Corporation Metal-passivating CMP compositions and methods
WO2009133793A1 (ja) 2008-05-01 2009-11-05 Jsr株式会社 化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法
JP2010080864A (ja) * 2008-09-29 2010-04-08 Fujifilm Corp 研磨液
US20110259556A1 (en) * 2008-11-18 2011-10-27 Georg Gallmetzer Device for generating combustible product gas from carbonaceous feedstocks
CN101586005A (zh) * 2009-07-03 2009-11-25 中国科学院上海微系统与信息技术研究所 SiSb基相变材料用化学机械抛光液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100504359B1 (ko) * 2000-02-04 2005-07-28 쇼와 덴코 가부시키가이샤 Ｌｓｉ 디바이스 연마용 조성물 및 ｌｓｉ 디바이스의제조 방법

Also Published As

Publication number Publication date
WO2013177110A1 (en) 2013-11-28
JP6215919B2 (ja) 2017-10-18
CN104334674A (zh) 2015-02-04
EP2852650B1 (en) 2020-07-29
TWI484008B (zh) 2015-05-11
US20130313225A1 (en) 2013-11-28
JP2015522669A (ja) 2015-08-06
KR20150014974A (ko) 2015-02-09
TW201406888A (zh) 2014-02-16
US8778212B2 (en) 2014-07-15
CN104334674B (zh) 2016-08-17
EP2852650A1 (en) 2015-04-01
EP2852650A4 (en) 2016-02-24

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