JP6177117B2 - 固体撮像装置、撮像装置、固体撮像装置の製造方法 - Google Patents

固体撮像装置、撮像装置、固体撮像装置の製造方法 Download PDF

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JP6177117B2
JP6177117B2 JP2013255423A JP2013255423A JP6177117B2 JP 6177117 B2 JP6177117 B2 JP 6177117B2 JP 2013255423 A JP2013255423 A JP 2013255423A JP 2013255423 A JP2013255423 A JP 2013255423A JP 6177117 B2 JP6177117 B2 JP 6177117B2
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substrate
wiring
imaging device
solid
semiconductor layer
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JP2015115420A (ja
JP2015115420A5 (enExample
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祐一 五味
祐一 五味
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Olympus Corp
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Olympus Corp
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Priority to PCT/JP2014/082696 priority patent/WO2015087918A1/ja
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Priority to US15/149,955 priority patent/US20160254299A1/en
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
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    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
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    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
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    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013255423A 2013-12-10 2013-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法 Expired - Fee Related JP6177117B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013255423A JP6177117B2 (ja) 2013-12-10 2013-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法
PCT/JP2014/082696 WO2015087918A1 (ja) 2013-12-10 2014-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法
US15/149,955 US20160254299A1 (en) 2013-12-10 2016-05-09 Solid-state imaging device, imaging device, solid-state imaging device manufacturing method

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JP2013255423A JP6177117B2 (ja) 2013-12-10 2013-12-10 固体撮像装置、撮像装置、固体撮像装置の製造方法

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JP2015115420A5 JP2015115420A5 (enExample) 2017-01-12
JP6177117B2 true JP6177117B2 (ja) 2017-08-09

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017187738A1 (ja) * 2016-04-25 2017-11-02 オリンパス株式会社 撮像素子、内視鏡および内視鏡システム
JP2018081946A (ja) * 2016-11-14 2018-05-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
WO2018154644A1 (ja) * 2017-02-22 2018-08-30 オリンパス株式会社 固体撮像装置、蛍光観察内視鏡装置、および固体撮像装置の製造方法
JP6779825B2 (ja) 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
US11329077B2 (en) * 2017-03-31 2022-05-10 Sony Semiconductor Solutions Corporation Semiconductor device with a through electrode reception part wider than a through electrode, solid-state imaging device, and electronic equipment
WO2018186196A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
WO2018186191A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
CN110476228B (zh) * 2017-04-04 2024-01-16 索尼半导体解决方案公司 半导体装置、制造半导体装置的方法和电子设备
CN110494962B (zh) * 2017-04-04 2024-01-12 索尼半导体解决方案公司 半导体器件、制造半导体器件的方法和电子设备
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
US11462419B2 (en) 2018-07-06 2022-10-04 Invensas Bonding Technologies, Inc. Microelectronic assemblies
US12027557B2 (en) * 2018-10-16 2024-07-02 Sony Semiconductor Solutions Corporation Semiconductor element and method of manufacturing the same
JP2022040579A (ja) * 2020-08-31 2022-03-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および、半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267394A (ja) * 1992-03-19 1993-10-15 Sumitomo Electric Ind Ltd 半導体素子の実装方法
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US7214999B2 (en) * 2003-10-31 2007-05-08 Motorola, Inc. Integrated photoserver for CMOS imagers
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
US8471939B2 (en) * 2008-08-01 2013-06-25 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
JP2011249562A (ja) * 2010-05-27 2011-12-08 Panasonic Corp 半導体装置及びその製造方法
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
JP5561190B2 (ja) * 2011-01-31 2014-07-30 富士通株式会社 半導体装置、半導体装置の製造方法及び電子装置
US20130075607A1 (en) * 2011-09-22 2013-03-28 Manoj Bikumandla Image sensors having stacked photodetector arrays
TWI577001B (zh) * 2011-10-04 2017-04-01 Sony Corp 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2013187475A (ja) * 2012-03-09 2013-09-19 Olympus Corp 固体撮像装置およびカメラシステム

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