JP6161959B2 - 抵抗式メモリのための感知増幅器回路 - Google Patents

抵抗式メモリのための感知増幅器回路 Download PDF

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Publication number
JP6161959B2
JP6161959B2 JP2013116741A JP2013116741A JP6161959B2 JP 6161959 B2 JP6161959 B2 JP 6161959B2 JP 2013116741 A JP2013116741 A JP 2013116741A JP 2013116741 A JP2013116741 A JP 2013116741A JP 6161959 B2 JP6161959 B2 JP 6161959B2
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Prior art keywords
transistor
latch
sense amplifier
precharge
amplifier circuit
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JP2013116741A
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Japanese (ja)
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JP2013251040A (ja
JP2013251040A5 (https=
Inventor
ヨンシク・ユン
エイドリアン・イー・オン
スーホ・チャ
チャン−キュン・キム
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP2013116741A 2012-06-04 2013-06-03 抵抗式メモリのための感知増幅器回路 Active JP6161959B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/488,432 US8750018B2 (en) 2012-06-04 2012-06-04 Sense amplifier circuitry for resistive type memory
US13/488,432 2012-06-04

Publications (3)

Publication Number Publication Date
JP2013251040A JP2013251040A (ja) 2013-12-12
JP2013251040A5 JP2013251040A5 (https=) 2016-06-02
JP6161959B2 true JP6161959B2 (ja) 2017-07-12

Family

ID=49670075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013116741A Active JP6161959B2 (ja) 2012-06-04 2013-06-03 抵抗式メモリのための感知増幅器回路

Country Status (4)

Country Link
US (1) US8750018B2 (https=)
JP (1) JP6161959B2 (https=)
KR (1) KR102183055B1 (https=)
CN (1) CN103456341B (https=)

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US9373418B2 (en) * 2014-01-02 2016-06-21 Advanced Micro Devices, Inc. Circuit and data processor with headroom monitoring and method therefor
KR102237735B1 (ko) 2014-06-16 2021-04-08 삼성전자주식회사 저항성 메모리 장치의 메모리 코어, 이를 포함하는 저항성 메모리 장치 및 저항성 메모리 장치의 데이터 감지 방법
US9142271B1 (en) * 2014-06-24 2015-09-22 Intel Corporation Reference architecture in a cross-point memory
GB2529861A (en) 2014-09-04 2016-03-09 Ibm Current-mode sense amplifier
CN105719679B (zh) * 2014-12-01 2018-02-02 中国科学院微电子研究所 灵敏放大器及一种信号处理的方法
US9443567B1 (en) * 2015-04-16 2016-09-13 Intel Corporation High speed sense amplifier latch with low power rail-to-rail input common mode range
KR102354350B1 (ko) * 2015-05-18 2022-01-21 삼성전자주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
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ITUA20161468A1 (it) * 2016-03-08 2017-09-08 Milano Politecnico Dispositivo e metodo per generare numeri casuali
US9881661B2 (en) * 2016-06-03 2018-01-30 Micron Technology, Inc. Charge mirror-based sensing for ferroelectric memory
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Also Published As

Publication number Publication date
JP2013251040A (ja) 2013-12-12
US20130322154A1 (en) 2013-12-05
US8750018B2 (en) 2014-06-10
KR20130136388A (ko) 2013-12-12
CN103456341B (zh) 2018-01-30
CN103456341A (zh) 2013-12-18
KR102183055B1 (ko) 2020-11-26

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