JP6161918B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6161918B2
JP6161918B2 JP2013034718A JP2013034718A JP6161918B2 JP 6161918 B2 JP6161918 B2 JP 6161918B2 JP 2013034718 A JP2013034718 A JP 2013034718A JP 2013034718 A JP2013034718 A JP 2013034718A JP 6161918 B2 JP6161918 B2 JP 6161918B2
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JP
Japan
Prior art keywords
wiring board
semiconductor device
wiring
pad
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013034718A
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English (en)
Japanese (ja)
Other versions
JP2014165319A (ja
JP2014165319A5 (enExample
Inventor
朋治 藤井
朋治 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2013034718A priority Critical patent/JP6161918B2/ja
Priority to US14/169,191 priority patent/US9214422B2/en
Publication of JP2014165319A publication Critical patent/JP2014165319A/ja
Publication of JP2014165319A5 publication Critical patent/JP2014165319A5/ja
Application granted granted Critical
Publication of JP6161918B2 publication Critical patent/JP6161918B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2013034718A 2013-02-25 2013-02-25 半導体装置 Active JP6161918B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013034718A JP6161918B2 (ja) 2013-02-25 2013-02-25 半導体装置
US14/169,191 US9214422B2 (en) 2013-02-25 2014-01-31 Semiconductor apparatus having signal and ground terminals arranged on vertically adjacent wiring substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013034718A JP6161918B2 (ja) 2013-02-25 2013-02-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2014165319A JP2014165319A (ja) 2014-09-08
JP2014165319A5 JP2014165319A5 (enExample) 2016-02-04
JP6161918B2 true JP6161918B2 (ja) 2017-07-12

Family

ID=51387317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013034718A Active JP6161918B2 (ja) 2013-02-25 2013-02-25 半導体装置

Country Status (2)

Country Link
US (1) US9214422B2 (enExample)
JP (1) JP6161918B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016149445A (ja) * 2015-02-12 2016-08-18 アンリツ株式会社 電源配線用部材および当該部材を用いたプリント基板配線構造
US9991550B2 (en) * 2015-02-27 2018-06-05 Verily Life Sciences Llc Methods and devices associated with bonding of solid-state lithium batteries
CN108025906A (zh) * 2015-09-30 2018-05-11 Tdk株式会社 带有阻尼的弹性安装传感器系统
US9754911B2 (en) * 2015-10-05 2017-09-05 Globalfoundries Inc. IC structure with angled interconnect elements
US9875958B1 (en) * 2016-11-09 2018-01-23 International Business Machines Corporation Trace/via hybrid structure and method of manufacture
US10438907B2 (en) * 2016-12-11 2019-10-08 Cyntec Co., Ltd. Wireless package with antenna connector and fabrication method thereof
CN110800102B (zh) * 2017-06-30 2023-08-15 株式会社村田制作所 电子部件模块及其制造方法
JP7386697B2 (ja) * 2019-12-26 2023-11-27 加賀Ｆｅｉ株式会社 無線ユニット
JP7655027B2 (ja) 2021-03-18 2025-04-02 三菱電機株式会社 多段基板接続構造

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5293145A (en) * 1989-09-19 1994-03-08 Onan Corporation Switch battery charger with reduced electromagnetic emission
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US5518964A (en) * 1994-07-07 1996-05-21 Tessera, Inc. Microelectronic mounting with multiple lead deformation and bonding
JPH118474A (ja) 1997-06-16 1999-01-12 Nec Corp 多層基板の製造方法
JP2001068621A (ja) * 1999-06-21 2001-03-16 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2002176239A (ja) * 2000-12-06 2002-06-21 Agilent Technologies Japan Ltd 高周波回路基板の接続装置及び接続方法
US6625881B2 (en) * 2001-09-11 2003-09-30 Xytrans, Inc. Solderless method for transferring high frequency, radio frequency signals between printed circuit boards
SG104279A1 (en) * 2001-11-02 2004-06-21 Inst Of Microelectronics Enhanced chip scale package for flip chips
JP2005286181A (ja) * 2004-03-30 2005-10-13 Nec Corp 半導体装置及びその製造方法及び携帯型電子機器
US7456046B2 (en) * 2005-02-23 2008-11-25 International Business Machines Corporation Method to create flexible connections for integrated circuits
JP4036872B2 (ja) * 2005-05-18 2008-01-23 アルプス電気株式会社 半導体装置の製造方法
US20100165562A1 (en) * 2006-01-12 2010-07-01 Para Kanagasabai Segaram Memory module
JP5011820B2 (ja) * 2006-05-24 2012-08-29 オムロン株式会社 積層デバイス、およびその製造方法
US8004093B2 (en) * 2008-08-01 2011-08-23 Stats Chippac Ltd. Integrated circuit package stacking system
JP2011009505A (ja) * 2009-06-26 2011-01-13 Sony Corp ３次元実装基板および３次元実装基板の製法
JP5809509B2 (ja) * 2011-09-29 2015-11-11 新光電気工業株式会社 スプリング端子付配線基板及びその実装構造とソケット
US8686552B1 (en) * 2013-03-14 2014-04-01 Palo Alto Research Center Incorporated Multilevel IC package using interconnect springs

Also Published As

Publication number Publication date
JP2014165319A (ja) 2014-09-08
US20140239492A1 (en) 2014-08-28
US9214422B2 (en) 2015-12-15

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