JP6160938B2 - 基板のエッチング装置及び基板のエッチング方法 - Google Patents
基板のエッチング装置及び基板のエッチング方法 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims description 231
- 239000000758 substrate Substances 0.000 title claims description 186
- 238000000034 method Methods 0.000 title claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 32
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 186
- 239000004065 semiconductor Substances 0.000 description 38
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 238000004458 analytical method Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
Description
ガス供給手段は、チャンバー内にエッチングガスを導入するものである。チャンバーの任意の箇所に設置できるが、本装置によるガス流動の制御を考慮すると、チャンバーの上面部又は側面の上側に設置することが好ましい。より好ましくはチャンバー上面に設置する。チャンバー底部に配置した基板に対し、ガス流動調整手段を介して、エッチングガスを均一に拡散させやすいためである。
20 蓋体
21 貫通孔
30 ガス供給手段
31 排気パイプ
32、33、33’ ガス流量調整手段
40 バッファー室
W 半導体基板
G ガス導入口
Claims (6)
- 底部に基板を配置するチャンバーを備え、エッチングガスにより基板表面のエッチングを行うエッチング装置において、
基板表面にエッチングガスを供給するガス供給手段と、
エッチング後のガスを、基板の略中心の上方より排気するガス排気手段と、
基板の上方側の略同心円上に配置され、エッチングガスを基板の周縁より略中心方向に流動させるもので、円盤状又は基板側を頂点とする略円錐状の形状を有するガス流動調整手段と、を備え、
ガス流動調整手段は、上下動可能に設置されており、ガス流動調整手段の略中央がガス排気手段と接続しており、
エッチングガスの流動を基板の周縁から中心方向への一定方向の流動に制御することにより、基板表面へのエッチングガスの接触を基板周縁から基板中心へと順に進行させて、均一なエッチングを行うことを特徴とするエッチング装置。 - ガス流動調整手段は円盤状であり、外周付近の厚みが、外周端側に向けて薄く加工されている請求項1に記載のエッチング装置。
- 請求項1または請求項2に記載されたエッチング装置において、
チャンバー上部が蓋体により閉ざされており、
ガス排気手段である排気パイプが、蓋体の中央に形成された貫通孔に挿入されており、
排気パイプの先端は、基板の略中心の上方側に配置されており、
蓋体の貫通孔内周と排気パイプの外周との間に、エッチングガスをチャンバー内に導入するガス導入部を有し、
エッチングガスは、ガス導入部から導入され、ガス流動調整手段の外周より基板表面に流動し、排気パイプ先端より排気可能となっているエッチング装置。 - 基板表面に供給するエッチングガスを均一化するバッファー室を有する請求項1〜請求項3のいずれかに記載のエッチング装置。
- 請求項1〜4のいずれかに記載されたエッチング装置を用いて基板表面をエッチングする基板のエッチング方法において、
基板上のポリシリコン、又は基板のバルクシリコンを、オゾンを含有したエッチングガスによりエッチングする基板のエッチング方法。 - 基板の直径(D)に対し、基板表面とガス流動調整手段の最下端との間の距離(H)の割合(H/D)を、1/60〜1/10とする請求項5に記載の基板のエッチング方法。
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PCT/JP2014/051032 WO2014129246A1 (ja) | 2013-02-21 | 2014-01-21 | 基板のエッチング装置及び基板の分析方法 |
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JP (1) | JP6160938B2 (ja) |
KR (1) | KR102004587B1 (ja) |
CN (1) | CN104995721B (ja) |
TW (1) | TWI608535B (ja) |
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JP6399141B1 (ja) * | 2017-04-17 | 2018-10-03 | 株式会社Sumco | シリコンウェーハの金属汚染分析方法およびシリコンウェーハの製造方法 |
WO2019016847A1 (ja) * | 2017-07-18 | 2019-01-24 | 株式会社 イアス | 基板分析用ノズル及び基板分析方法 |
JP6922804B2 (ja) | 2018-03-22 | 2021-08-18 | 株式会社Sumco | ボロンドープp型シリコンウェーハのエッチング方法、金属汚染評価方法および製造方法 |
JP6603934B2 (ja) * | 2018-04-13 | 2019-11-13 | 東芝メモリ株式会社 | シリコン基板の分析方法 |
CN108735633B (zh) * | 2018-05-29 | 2020-09-04 | 苏州极普智能科技有限公司 | 一种半导体晶圆刻蚀装置 |
JP7131513B2 (ja) * | 2019-09-05 | 2022-09-06 | 株式会社Sumco | シリコン試料の前処理方法、シリコン試料の金属汚染評価方法、単結晶シリコンインゴット育成工程の評価方法、単結晶シリコンインゴットの製造方法およびシリコンウェーハの製造方法 |
CN111508806B (zh) * | 2020-04-17 | 2023-01-17 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室及半导体加工设备 |
US11145659B1 (en) * | 2020-05-18 | 2021-10-12 | Nanya Technology Corporation | Semiconductor structure and method of forming the same |
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JPH09223685A (ja) * | 1996-02-14 | 1997-08-26 | Sony Corp | プラズマ処理装置およびプラズマ処理方法 |
JPH1133506A (ja) | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
US6702900B2 (en) * | 2001-03-22 | 2004-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer chuck for producing an inert gas blanket and method for using |
JP2004339566A (ja) * | 2003-05-15 | 2004-12-02 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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JP2009260181A (ja) * | 2008-04-21 | 2009-11-05 | Sekisui Chem Co Ltd | エッチング装置及びその製造方法並びに該装置を用いたエッチング方法及び被処理物 |
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JP5809396B2 (ja) * | 2010-06-24 | 2015-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
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US20150357249A1 (en) | 2015-12-10 |
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US9741627B2 (en) | 2017-08-22 |
CN104995721A (zh) | 2015-10-21 |
WO2014129246A1 (ja) | 2014-08-28 |
TW201442112A (zh) | 2014-11-01 |
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