CN108735633B - 一种半导体晶圆刻蚀装置 - Google Patents
一种半导体晶圆刻蚀装置 Download PDFInfo
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- CN108735633B CN108735633B CN201810534802.9A CN201810534802A CN108735633B CN 108735633 B CN108735633 B CN 108735633B CN 201810534802 A CN201810534802 A CN 201810534802A CN 108735633 B CN108735633 B CN 108735633B
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- 238000005530 etching Methods 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000001179 sorption measurement Methods 0.000 claims abstract description 61
- 238000000605 extraction Methods 0.000 claims abstract description 41
- 150000002500 ions Chemical class 0.000 claims description 78
- 238000005096 rolling process Methods 0.000 claims description 35
- 238000003860 storage Methods 0.000 claims description 23
- 239000007795 chemical reaction product Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 64
- 230000000694 effects Effects 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 239000000284 extract Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010892 electric spark Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810534802.9A CN108735633B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体晶圆刻蚀装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810534802.9A CN108735633B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体晶圆刻蚀装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108735633A CN108735633A (zh) | 2018-11-02 |
CN108735633B true CN108735633B (zh) | 2020-09-04 |
Family
ID=63935759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201810534802.9A Active CN108735633B (zh) | 2018-05-29 | 2018-05-29 | 一种半导体晶圆刻蚀装置 |
Country Status (1)
Country | Link |
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CN (1) | CN108735633B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113972124B (zh) * | 2020-07-23 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种接地组件及其等离子体处理装置与工作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101552186A (zh) * | 2008-03-31 | 2009-10-07 | 东京毅力科创株式会社 | 等离子体蚀刻方法 |
CN104183524A (zh) * | 2014-08-27 | 2014-12-03 | 上海华力微电子有限公司 | 一种晶圆边缘的刻蚀装置 |
CN104995721A (zh) * | 2013-02-21 | 2015-10-21 | 埃耶士株式会社 | 基板的蚀刻装置及基板的分析方法 |
CN105244250A (zh) * | 2014-07-03 | 2016-01-13 | 斯克林集团公司 | 蚀刻装置及蚀刻方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6339866B2 (ja) * | 2014-06-05 | 2018-06-06 | 東京エレクトロン株式会社 | プラズマ処理装置およびクリーニング方法 |
-
2018
- 2018-05-29 CN CN201810534802.9A patent/CN108735633B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101552186A (zh) * | 2008-03-31 | 2009-10-07 | 东京毅力科创株式会社 | 等离子体蚀刻方法 |
CN104995721A (zh) * | 2013-02-21 | 2015-10-21 | 埃耶士株式会社 | 基板的蚀刻装置及基板的分析方法 |
CN105244250A (zh) * | 2014-07-03 | 2016-01-13 | 斯克林集团公司 | 蚀刻装置及蚀刻方法 |
CN104183524A (zh) * | 2014-08-27 | 2014-12-03 | 上海华力微电子有限公司 | 一种晶圆边缘的刻蚀装置 |
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Publication number | Publication date |
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CN108735633A (zh) | 2018-11-02 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20200807 Address after: Building 39, Weile neighborhood life square, Luzhi Town, Wuzhong District, Suzhou City, Jiangsu Province Applicant after: Suzhou Jipu Intelligent Technology Co.,Ltd. Address before: 210008 Nanjing University, 22 Hankou Road, Jiangsu, Nanjing Applicant before: Hou Yuchuang |
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TR01 | Transfer of patent right |
Effective date of registration: 20230607 Address after: Building E, Building 1, No. 218 Furong Middle Fourth Road, Xishan District, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Zhongsi Xinyang Technology Co.,Ltd. Address before: Building 39, Weile Neighborhood Life Plaza, Luzhi Town, Wuzhong District, Suzhou City, Jiangsu Province, 215125 Patentee before: Suzhou Jipu Intelligent Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A semiconductor wafer etching device Granted publication date: 20200904 Pledgee: Bank of China Limited Liangxi Branch, Wuxi Pledgor: Wuxi Zhongsi Xinyang Technology Co.,Ltd. Registration number: Y2024980009044 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |