WO2019016847A1 - 基板分析用ノズル及び基板分析方法 - Google Patents
基板分析用ノズル及び基板分析方法 Download PDFInfo
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- WO2019016847A1 WO2019016847A1 PCT/JP2017/025852 JP2017025852W WO2019016847A1 WO 2019016847 A1 WO2019016847 A1 WO 2019016847A1 JP 2017025852 W JP2017025852 W JP 2017025852W WO 2019016847 A1 WO2019016847 A1 WO 2019016847A1
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- WIPO (PCT)
- Prior art keywords
- analysis
- substrate
- nozzle
- pipe
- outer pipe
- Prior art date
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- 238000004458 analytical method Methods 0.000 title claims abstract description 122
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 239000007788 liquid Substances 0.000 claims abstract description 43
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 6
- 239000012491 analyte Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000011084 recovery Methods 0.000 abstract description 14
- 238000010408 sweeping Methods 0.000 abstract description 11
- 230000037361 pathway Effects 0.000 abstract 2
- 230000002265 prevention Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/02—Burettes; Pipettes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/06—Fluid handling related problems
- B01L2200/0615—Loss of fluid by dripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/06—Fluid handling related problems
- B01L2200/0684—Venting, avoiding backpressure, avoid gas bubbles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/08—Geometry, shape and general structure
- B01L2300/0832—Geometry, shape and general structure cylindrical, tube shaped
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N2001/028—Sampling from a surface, swabbing, vaporising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Definitions
- the present invention relates to a nozzle for analyzing an analyte such as a trace metal contained in a substrate.
- the present invention also relates to a method of analyzing a substrate using this nozzle.
- a nozzle for analyzing a substrate such as a semiconductor wafer is used when a metal, an organic substance or the like mixed in the substrate in a manufacturing process or the like is detected with a small amount of analysis liquid.
- a small amount of analysis is performed after the pretreatment for etching the formed film by a vapor phase decomposition method or the like.
- a nozzle for substrate analysis is used.
- Patent Document 1 As a nozzle having such characteristics, the present inventors et al., In Patent Document 1, have a nozzle body for discharging and suctioning an analysis solution, and an outer tube disposed on the outer periphery of the nozzle body so as to surround the analysis solution to be swept.
- a nozzle for substrate analysis which consists of a double tube consisting of Further, in Patent Document 2, a gas spray tube for blowing an inert gas in a direction substantially parallel to the substrate surface toward the tip of the nozzle main body to the nozzle for substrate analysis of this double tube structure is disclosed.
- a nozzle for substrate analysis is also proposed, characterized in that it is arranged on the outer peripheral side of the above and on the opposite side of the sweep direction of the nozzle.
- a highly hydrophilic substrate for example, a semiconductor substrate obtained by bulk etching a so-called P + or P ++ silicon wafer having a relatively large boron content, or high energy
- the recovery rate of the analysis solution after sweep may be low. There was a tendency to affect the analysis accuracy.
- the nozzle of the double tube structure described in Patent Document 1 is specifically shown in FIG.
- the nozzle 1 of FIG. 1 is constituted by a double pipe consisting of a nozzle body 10 and an outer pipe 20, and the nozzle body 10 is provided with a capillary 11 connected to a syringe pump (not shown), Discharge and suction of the analysis solution D are possible from the thin tube 11.
- the outer pipe 20 is provided with an exhaust means 21 connected to a pump (not shown) so that the space between the nozzle body 10 and the outer pipe 20 has a reduced pressure atmosphere.
- the analysis liquid D held inside the outer tube 20 is moved so as to sweep the surface of the substrate to be analyzed.
- the analysis solution in the form of droplets due to surface tension, so that the analysis solution can be swept and recovered without any particular problem.
- the nozzle without the analysis solution D existing between the nozzle body 10 and the outer tube 20 moving to the nozzle body 10 side The analysis solution D may remain between the main body 10 and the outer tube 20.
- the gap between the nozzle body and the substrate is widened at the time of recovery of the analysis liquid, and the analysis liquid D present between the nozzle body 10 and the outer tube 20 is the nozzle body 10
- the analysis liquid D present between the nozzle body 10 and the outer tube 20 is the nozzle body 10
- the inert gas is sprayed in the direction substantially parallel to the substrate surface toward the tip of the nozzle body in the double-pipe structure nozzle. Even if the substrate surface is highly hydrophilic, the analysis liquid can be reliably prevented from leaking out (falling off) from the tip of the nozzle during sweeping of the substrate surface, but as in the case of Patent Document 1, recovery of the analysis liquid Sometimes, the analysis solution sometimes remains between the nozzle body and the outer tube, and the recovery rate of the analysis solution tends to be low.
- the present invention for solving the above problems discharges and aspirates the analysis liquid at a nozzle for substrate analysis that discharges the analysis liquid from the tip onto the substrate and sweeps the substrate surface with the discharged analysis liquid and then suctions the analysis liquid.
- Pipe and a third pipe consisting of a first outer pipe provided on the outer periphery of the pipe so as to surround the analysis liquid to be swept, and a second outer pipe provided on the outer peripheral side of the first outer pipe;
- a substrate for analyzing a substrate comprising: a first exhaust means which is an exhaust path between the first outer pipe and a second exhaust means which is an exhaust path between the first outer pipe and the second outer pipe. It relates to the nozzle. According to the present invention, even if the substrate surface is highly hydrophilic, the analysis solution can be swept without falling off the nozzle, and the analysis solution can be recovered with a high recovery rate.
- a substrate having a highly hydrophilic substrate surface a semiconductor substrate obtained by bulk etching a so-called P + or P ++ silicon wafer having a relatively large boron content, or a silicon wafer ion-implanted with high energy
- the silicon wafer after decomposing the organic substance on the silicon wafer by dry etching, or SiC or a glass wafer may be mentioned.
- these highly hydrophilic substrates include those having a contact angle of 90 ° or less.
- the analysis solution is discharged from the piping onto the substrate, and the substrate surface is swept with the discharged analysis solution while being exhausted by the second exhaust means, and then the first exhaust means It is preferable to aspirate the analysis solution containing the object to be analyzed into the pipe while exhausting air.
- the nozzle for substrate analysis according to the present invention has a so-called triple tube structure, and when sweeping the substrate surface with the analysis solution, the analysis solution is discharged from the piping onto the substrate and discharged while being exhausted by the second exhaust unit. The substrate surface is swept with the analyzed solution. This makes it possible to reliably prevent the dropout of the analysis solution from the nozzle during the sweep.
- the second exhaust means is stopped and the first exhaust means exhausts, and the gap between the tip of the nozzle and the substrate is widened to pipe the analytical liquid containing the analyte. Aspirate and collect. As a result, the analysis liquid present between the second outer pipe and the first outer pipe is drawn between the first outer pipe and the nozzle body, and when the analysis liquid is sucked by the pipe in this state, It becomes possible to recover the analysis solution with a high recovery rate.
- the size of each member at the time of forming the triple tube structure is not particularly limited. It is preferable to prepare a substrate analysis nozzle of a size appropriately adjusted in accordance with the type and size of a substrate to be analyzed, analysis conditions, and the like.
- the inner diameter of piping is 1/8 inch (pipe thickness 0.2 mm to 0.5 mm)
- the inner diameter of the first outer pipe is 10 mm (first outer pipe thickness 1 mm to 2 mm)
- the second outside The inner diameter of the tube is 20 mm (the thickness of the first outer tube is 1 mm to 2 mm).
- the substrate analysis nozzle of the present invention is a highly hydrophilic substrate, it can reliably prevent the analysis solution from leaking out (falling off) from the nozzle, and the analysis solution after sweeping can be collected with high efficiency. It can be collected at a rate.
- tube structure Sectional drawing of the nozzle for board
- FIG. 2 shows a cross-sectional view of the substrate analysis nozzle of the present embodiment.
- the nozzle 100 shown in FIG. 2 is a triple including a pipe 110, a first outer pipe 120 provided on the outer periphery of the pipe 110, and a second outer pipe 130 provided on the outer side of the first outer pipe 120. It consists of a tube.
- the pipe 110 is connected to a syringe pump (not shown), and the pipe 110 enables suction and discharge of the analysis liquid.
- the first outer pipe 120 is provided with a first exhaust means 121 connected to an exhaust pump (not shown), and a space formed between the pipe 110 and the first outer pipe 120 (first exhaust (Path) can be in a reduced pressure atmosphere.
- first exhaust first exhaust
- second exhaust means 131 to which an exhaust pump (not shown) is connected is provided.
- the space (second exhaust path) formed between the two outer pipes 130 can be made into a reduced pressure atmosphere.
- substrate analysis is performed according to the following procedure.
- the tip of the nozzle 100 is lowered onto the substrate W to such an extent that it does not contact the substrate surface (the gap between the tip of the nozzle 100 and the substrate W is adjusted to about 0.1 mm to 0.2 mm).
- the second exhaust path is in a reduced pressure atmosphere.
- the substrate surface is swept with the analysis solution.
- the first exhaust path is made into a reduced pressure atmosphere, and at the same time, the pressure reduction of the second exhaust path is released.
- the gap between the tip of the nozzle 100 and the substrate W is widened to about 1 mm.
- the analysis liquid is aspirated by the pipe 110, and the analysis liquid is collected by the syringe pump. The collected analysis solution is analyzed using an analyzer.
- the dimensions of the nozzle are as follows.
- the pipe used had an outer diameter of 1/8 inch, an inner diameter of the first outer pipe of 6 mm, an outer diameter of the first outer pipe of 12 mm, an inner diameter of the second outer pipe of 20 mm, and an outer diameter of the second outer pipe of 22 mm.
- a 12-inch P ++ silicon wafer was used as a substrate for analysis.
- As an analysis solution a solution containing 3% HF and 4% H 2 O 2 was used.
- the recovery rate was investigated by measuring the amount of the analysis liquid discharged into the pipe and the amount of the analysis liquid collected by the nozzle body after the sweep.
- the analysis liquid was swept at a speed of 30 mm / min in a state where 1000 ⁇ L was introduced into the pipe and 800 ⁇ L was discharged onto the substrate for analysis, and then the analysis liquid was sucked and recovered.
- the amount of analysis liquid collected was 950 ⁇ L. Therefore, the recovery rate of the analysis liquid when using the substrate analysis nozzle of the present embodiment was 95%.
- the nozzle of this double tube structure had an outer diameter of the nozzle body of 12 mm, an outer tube inner diameter of 20 mm, and a first outer tube outer diameter of 22 mm.
- the substrate for analysis and the analysis solution the same ones as described above were used.
- the analysis solution was aspirated and collected.
- the amount of analysis liquid collected was 700 ⁇ L. Therefore, the recovery rate of the analysis solution when using the nozzle of the double tube structure shown in FIG. 1 was 70%.
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Abstract
Description
10 ノズル本体
11 細管
20 外管
110 配管
120 第一外管
130 第二外管
W ウェーハ
D 分析液
Claims (2)
- 先端から基板上に分析液を吐出し、吐出した分析液で基板表面を掃引した後に分析液を吸引する基板分析用のノズルにおいて、
分析液を吐出及び吸引する配管と、掃引する分析液を取り囲むよう配管の外周に設けられた第一外管と、第一外管の外周側に設けられた第二外管とからなる三重管で構成され、
配管と第一外管との間を排気経路とする第一排気手段と、第一外管と第二外管との間を排気経路とする第二排気手段とを有することを特徴とする基板分析用ノズル。 - 請求項1記載の基板分析用ノズルを用いて基板を分析する方法において、
配管より基板に分析液を吐出し、第二排気手段により排気しながら吐出した分析液で基板表面を掃引した後、第二排気手段を停止し第一排気手段により排気しながら分析対象物を含む分析液を配管に吸引することを特徴とする基板分析方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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CN201780004607.9A CN109791097B (zh) | 2017-07-18 | 2017-07-18 | 基板分析用管嘴及基板分析方法 |
JP2017552507A JP6418586B1 (ja) | 2017-07-18 | 2017-07-18 | 基板分析用ノズル及び基板分析方法 |
KR1020187017180A KR102115107B1 (ko) | 2017-07-18 | 2017-07-18 | 기판 분석용 노즐 및 기판 분석방법 |
US15/780,925 US10688485B2 (en) | 2017-07-18 | 2017-07-18 | Substrate analysis nozzle and method for analyzing substrate |
EP17882257.3A EP3457109B1 (en) | 2017-07-18 | 2017-07-18 | Nozzle for substrate analysis and substrate analysis method |
PCT/JP2017/025852 WO2019016847A1 (ja) | 2017-07-18 | 2017-07-18 | 基板分析用ノズル及び基板分析方法 |
TW106131578A TWI702666B (zh) | 2017-07-18 | 2017-09-14 | 基板分析用管嘴及基板分析方法 |
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PCT/JP2017/025852 WO2019016847A1 (ja) | 2017-07-18 | 2017-07-18 | 基板分析用ノズル及び基板分析方法 |
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US (1) | US10688485B2 (ja) |
EP (1) | EP3457109B1 (ja) |
JP (1) | JP6418586B1 (ja) |
KR (1) | KR102115107B1 (ja) |
CN (1) | CN109791097B (ja) |
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Cited By (1)
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WO2020137173A1 (ja) * | 2018-12-26 | 2020-07-02 | 株式会社 イアス | 基板分析方法および基板分析装置 |
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JP2023521908A (ja) * | 2020-04-16 | 2023-05-25 | エレメンタル・サイエンティフィック・インコーポレイテッド | 半導体ウエハの統合された分解と走査のためのシステム |
KR102328717B1 (ko) * | 2020-12-23 | 2021-11-22 | 주식회사 헥사 | 삼중관 구조를 갖는 액체수소 주입용 아답터 |
CN115700899A (zh) * | 2021-07-16 | 2023-02-07 | 江苏鲁汶仪器股份有限公司 | 一种用于晶圆扫描的喷嘴及扫描系统、扫描方法 |
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US20190358622A1 (en) | 2019-11-28 |
EP3457109A4 (en) | 2019-03-20 |
CN109791097B (zh) | 2022-01-04 |
KR102115107B1 (ko) | 2020-05-25 |
US10688485B2 (en) | 2020-06-23 |
CN109791097A (zh) | 2019-05-21 |
EP3457109A1 (en) | 2019-03-20 |
TW201909296A (zh) | 2019-03-01 |
JP6418586B1 (ja) | 2018-11-07 |
TWI702666B (zh) | 2020-08-21 |
KR20190087965A (ko) | 2019-07-25 |
JPWO2019016847A1 (ja) | 2019-07-18 |
EP3457109B1 (en) | 2021-09-01 |
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