JP6157381B2 - エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ - Google Patents

エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ Download PDF

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Publication number
JP6157381B2
JP6157381B2 JP2014041976A JP2014041976A JP6157381B2 JP 6157381 B2 JP6157381 B2 JP 6157381B2 JP 2014041976 A JP2014041976 A JP 2014041976A JP 2014041976 A JP2014041976 A JP 2014041976A JP 6157381 B2 JP6157381 B2 JP 6157381B2
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Japan
Prior art keywords
epitaxial wafer
terrace
epitaxial
layer
silicon
Prior art date
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JP2014041976A
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English (en)
Japanese (ja)
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JP2015170616A (ja
JP2015170616A5 (enExample
Inventor
和徳 萩本
和徳 萩本
篠宮　勝
勝 篠宮
慶太郎 土屋
慶太郎 土屋
博一 後藤
博一 後藤
憲 佐藤
憲 佐藤
洋志 鹿内
洋志 鹿内
昇一 小林
昇一 小林
宏高 栗本
宏高 栗本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority to JP2014041976A priority Critical patent/JP6157381B2/ja
Application filed by Sanken Electric Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Sanken Electric Co Ltd
Priority to US15/120,924 priority patent/US10319587B2/en
Priority to CN201580011736.1A priority patent/CN106068547B/zh
Priority to KR1020167024254A priority patent/KR102262063B1/ko
Priority to PCT/JP2015/000595 priority patent/WO2015133063A1/ja
Priority to DE112015000728.8T priority patent/DE112015000728T5/de
Priority to TW104105359A priority patent/TWI647326B/zh
Publication of JP2015170616A publication Critical patent/JP2015170616A/ja
Publication of JP2015170616A5 publication Critical patent/JP2015170616A5/ja
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Publication of JP6157381B2 publication Critical patent/JP6157381B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2014041976A 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ Active JP6157381B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
CN201580011736.1A CN106068547B (zh) 2014-03-04 2015-02-10 外延晶圆的制造方法及外延生长用硅系基板
KR1020167024254A KR102262063B1 (ko) 2014-03-04 2015-02-10 에피택셜 웨이퍼의 제조방법 및 에피택셜 성장용 실리콘계 기판
PCT/JP2015/000595 WO2015133063A1 (ja) 2014-03-04 2015-02-10 エピタキシャルウェーハの製造方法及びエピタキシャル成長用シリコン系基板
US15/120,924 US10319587B2 (en) 2014-03-04 2015-02-10 Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth
DE112015000728.8T DE112015000728T5 (de) 2014-03-04 2015-02-10 Verfahren zum Herstellen eines epitaktischen Wafers und Substrat auf Siliziumbasis zum epitaktischen Wachstum
TW104105359A TWI647326B (zh) 2014-03-04 2015-02-16 Method for manufacturing epitaxial wafer and germanium substrate for epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ

Publications (3)

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JP2015170616A JP2015170616A (ja) 2015-09-28
JP2015170616A5 JP2015170616A5 (enExample) 2016-09-29
JP6157381B2 true JP6157381B2 (ja) 2017-07-05

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Country Status (7)

Country Link
US (1) US10319587B2 (enExample)
JP (1) JP6157381B2 (enExample)
KR (1) KR102262063B1 (enExample)
CN (1) CN106068547B (enExample)
DE (1) DE112015000728T5 (enExample)
TW (1) TWI647326B (enExample)
WO (1) WO2015133063A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI645454B (zh) * 2017-03-31 2018-12-21 環球晶圓股份有限公司 磊晶基板及其製造方法
JP6879223B2 (ja) * 2018-01-18 2021-06-02 株式会社Sumco 貼り合わせウェーハの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227117A (ja) 1983-06-08 1984-12-20 Nec Corp 半導体装置
JPS6230336A (ja) * 1985-07-31 1987-02-09 Fujitsu Ltd プラズマ酸化法
JP3336866B2 (ja) 1996-08-27 2002-10-21 信越半導体株式会社 気相成長用シリコン単結晶基板の製造方法
JP2007246289A (ja) 2004-03-11 2007-09-27 Nec Corp 窒化ガリウム系半導体基板の作製方法
JP2007204286A (ja) 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
CN101140868B (zh) * 2006-09-06 2010-06-09 胜高股份有限公司 外延晶片及其制造方法
JP5029234B2 (ja) * 2006-09-06 2012-09-19 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP5245180B2 (ja) * 2009-12-01 2013-07-24 三菱電機株式会社 半導体装置の製造方法
JP2011161975A (ja) 2010-02-05 2011-08-25 Toyota Motor Corp 車両のパワートレーン
JP5417211B2 (ja) 2010-02-10 2014-02-12 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
WO2011161975A1 (ja) 2010-06-25 2011-12-29 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
JP6026188B2 (ja) 2011-09-12 2016-11-16 住友化学株式会社 窒化物半導体結晶の製造方法
KR20130062736A (ko) 2011-12-05 2013-06-13 삼성전자주식회사 실리콘 기판, 이를 채용한 에피 구조체 및 실리콘 기판의 제조 방법
JP6130995B2 (ja) 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
WO2015114732A1 (ja) * 2014-01-28 2015-08-06 株式会社サイオクス 半導体基板の製造方法
JP6261388B2 (ja) * 2014-03-05 2018-01-17 信越半導体株式会社 半導体エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
TWI647326B (zh) 2019-01-11
JP2015170616A (ja) 2015-09-28
KR102262063B1 (ko) 2021-06-09
CN106068547A (zh) 2016-11-02
KR20160127748A (ko) 2016-11-04
DE112015000728T5 (de) 2017-05-11
US20160365239A1 (en) 2016-12-15
CN106068547B (zh) 2019-06-04
WO2015133063A1 (ja) 2015-09-11
TW201600621A (zh) 2016-01-01
US10319587B2 (en) 2019-06-11

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