CN106068547B - 外延晶圆的制造方法及外延生长用硅系基板 - Google Patents

外延晶圆的制造方法及外延生长用硅系基板 Download PDF

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Publication number
CN106068547B
CN106068547B CN201580011736.1A CN201580011736A CN106068547B CN 106068547 B CN106068547 B CN 106068547B CN 201580011736 A CN201580011736 A CN 201580011736A CN 106068547 B CN106068547 B CN 106068547B
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Prior art keywords
epitaxial
epitaxial wafer
silicon
layer
manufacturing
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CN201580011736.1A
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Chinese (zh)
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CN106068547A (zh
Inventor
萩本和德
篠宫胜
土屋庆太郎
后藤博一
佐藤宪
鹿内洋志
小林昇一
栗本宏高
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201580011736.1A 2014-03-04 2015-02-10 外延晶圆的制造方法及外延生长用硅系基板 Active CN106068547B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-041976 2014-03-04
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
PCT/JP2015/000595 WO2015133063A1 (ja) 2014-03-04 2015-02-10 エピタキシャルウェーハの製造方法及びエピタキシャル成長用シリコン系基板

Publications (2)

Publication Number Publication Date
CN106068547A CN106068547A (zh) 2016-11-02
CN106068547B true CN106068547B (zh) 2019-06-04

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Country Status (7)

Country Link
US (1) US10319587B2 (enExample)
JP (1) JP6157381B2 (enExample)
KR (1) KR102262063B1 (enExample)
CN (1) CN106068547B (enExample)
DE (1) DE112015000728B4 (enExample)
TW (1) TWI647326B (enExample)
WO (1) WO2015133063A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388518B2 (en) 2017-03-31 2019-08-20 Globalwafers Co., Ltd. Epitaxial substrate and method of manufacturing the same
JP6879223B2 (ja) * 2018-01-18 2021-06-02 株式会社Sumco 貼り合わせウェーハの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882401A (en) * 1996-08-27 1999-03-16 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
JP2011119336A (ja) * 2009-12-01 2011-06-16 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体基板
CN103137656A (zh) * 2011-12-05 2013-06-05 三星电子株式会社 硅衬底及其制造方法和外延结构及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227117A (ja) 1983-06-08 1984-12-20 Nec Corp 半導体装置
JPS6230336A (ja) * 1985-07-31 1987-02-09 Fujitsu Ltd プラズマ酸化法
JP2007246289A (ja) 2004-03-11 2007-09-27 Nec Corp 窒化ガリウム系半導体基板の作製方法
JP2007204286A (ja) 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
JP5029234B2 (ja) * 2006-09-06 2012-09-19 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
KR100925359B1 (ko) * 2006-09-06 2009-11-09 가부시키가이샤 섬코 에피택셜 웨이퍼 및 그 제조 방법
JP2011161975A (ja) 2010-02-05 2011-08-25 Toyota Motor Corp 車両のパワートレーン
JP5417211B2 (ja) 2010-02-10 2014-02-12 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
JPWO2011161975A1 (ja) 2010-06-25 2013-08-19 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
JP6026188B2 (ja) 2011-09-12 2016-11-16 住友化学株式会社 窒化物半導体結晶の製造方法
JP6130995B2 (ja) 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
EP3101160B1 (en) * 2014-01-28 2019-06-12 Sumitomo Chemical Company, Limited Semiconductor substrate manufacturing method
JP6261388B2 (ja) * 2014-03-05 2018-01-17 信越半導体株式会社 半導体エピタキシャルウェーハの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882401A (en) * 1996-08-27 1999-03-16 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
JP2011119336A (ja) * 2009-12-01 2011-06-16 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体基板
CN103137656A (zh) * 2011-12-05 2013-06-05 三星电子株式会社 硅衬底及其制造方法和外延结构及其制造方法

Also Published As

Publication number Publication date
DE112015000728B4 (de) 2025-12-24
US10319587B2 (en) 2019-06-11
TW201600621A (zh) 2016-01-01
DE112015000728T5 (de) 2017-05-11
TWI647326B (zh) 2019-01-11
WO2015133063A1 (ja) 2015-09-11
JP6157381B2 (ja) 2017-07-05
CN106068547A (zh) 2016-11-02
KR20160127748A (ko) 2016-11-04
JP2015170616A (ja) 2015-09-28
US20160365239A1 (en) 2016-12-15
KR102262063B1 (ko) 2021-06-09

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