JP2015170616A5 - - Google Patents

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Publication number
JP2015170616A5
JP2015170616A5 JP2014041976A JP2014041976A JP2015170616A5 JP 2015170616 A5 JP2015170616 A5 JP 2015170616A5 JP 2014041976 A JP2014041976 A JP 2014041976A JP 2014041976 A JP2014041976 A JP 2014041976A JP 2015170616 A5 JP2015170616 A5 JP 2015170616A5
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JP
Japan
Prior art keywords
terrace
mirror surface
dust generation
mirror
quasi
Prior art date
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Granted
Application number
JP2014041976A
Other languages
English (en)
Japanese (ja)
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JP2015170616A (ja
JP6157381B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2014041976A external-priority patent/JP6157381B2/ja
Priority to JP2014041976A priority Critical patent/JP6157381B2/ja
Priority to KR1020167024254A priority patent/KR102262063B1/ko
Priority to DE112015000728.8T priority patent/DE112015000728B4/de
Priority to CN201580011736.1A priority patent/CN106068547B/zh
Priority to PCT/JP2015/000595 priority patent/WO2015133063A1/ja
Priority to US15/120,924 priority patent/US10319587B2/en
Priority to TW104105359A priority patent/TWI647326B/zh
Publication of JP2015170616A publication Critical patent/JP2015170616A/ja
Publication of JP2015170616A5 publication Critical patent/JP2015170616A5/ja
Publication of JP6157381B2 publication Critical patent/JP6157381B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014041976A 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ Active JP6157381B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
PCT/JP2015/000595 WO2015133063A1 (ja) 2014-03-04 2015-02-10 エピタキシャルウェーハの製造方法及びエピタキシャル成長用シリコン系基板
DE112015000728.8T DE112015000728B4 (de) 2014-03-04 2015-02-10 Verfahren zum Herstellen eines epitaktischen Wafers und Substrat auf Siliziumbasis zum epitaktischen Wachstum
CN201580011736.1A CN106068547B (zh) 2014-03-04 2015-02-10 外延晶圆的制造方法及外延生长用硅系基板
KR1020167024254A KR102262063B1 (ko) 2014-03-04 2015-02-10 에피택셜 웨이퍼의 제조방법 및 에피택셜 성장용 실리콘계 기판
US15/120,924 US10319587B2 (en) 2014-03-04 2015-02-10 Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growth
TW104105359A TWI647326B (zh) 2014-03-04 2015-02-16 Method for manufacturing epitaxial wafer and germanium substrate for epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ

Publications (3)

Publication Number Publication Date
JP2015170616A JP2015170616A (ja) 2015-09-28
JP2015170616A5 true JP2015170616A5 (enExample) 2016-09-29
JP6157381B2 JP6157381B2 (ja) 2017-07-05

Family

ID=54054884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014041976A Active JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ

Country Status (7)

Country Link
US (1) US10319587B2 (enExample)
JP (1) JP6157381B2 (enExample)
KR (1) KR102262063B1 (enExample)
CN (1) CN106068547B (enExample)
DE (1) DE112015000728B4 (enExample)
TW (1) TWI647326B (enExample)
WO (1) WO2015133063A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388518B2 (en) 2017-03-31 2019-08-20 Globalwafers Co., Ltd. Epitaxial substrate and method of manufacturing the same
JP6879223B2 (ja) * 2018-01-18 2021-06-02 株式会社Sumco 貼り合わせウェーハの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227117A (ja) 1983-06-08 1984-12-20 Nec Corp 半導体装置
JPS6230336A (ja) * 1985-07-31 1987-02-09 Fujitsu Ltd プラズマ酸化法
JP3336866B2 (ja) * 1996-08-27 2002-10-21 信越半導体株式会社 気相成長用シリコン単結晶基板の製造方法
JP2007246289A (ja) 2004-03-11 2007-09-27 Nec Corp 窒化ガリウム系半導体基板の作製方法
JP2007204286A (ja) 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
JP5029234B2 (ja) * 2006-09-06 2012-09-19 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
KR100925359B1 (ko) * 2006-09-06 2009-11-09 가부시키가이샤 섬코 에피택셜 웨이퍼 및 그 제조 방법
JP5245180B2 (ja) * 2009-12-01 2013-07-24 三菱電機株式会社 半導体装置の製造方法
JP2011161975A (ja) 2010-02-05 2011-08-25 Toyota Motor Corp 車両のパワートレーン
JP5417211B2 (ja) 2010-02-10 2014-02-12 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
CN102959682A (zh) 2010-06-25 2013-03-06 同和电子科技有限公司 外延生长基板与半导体装置、外延生长方法
JP6026188B2 (ja) 2011-09-12 2016-11-16 住友化学株式会社 窒化物半導体結晶の製造方法
KR20130062736A (ko) 2011-12-05 2013-06-13 삼성전자주식회사 실리콘 기판, 이를 채용한 에피 구조체 및 실리콘 기판의 제조 방법
JP6130995B2 (ja) 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
US10253432B2 (en) * 2014-01-28 2019-04-09 Sumitomo Chemical Company, Limited Semiconductor substrate manufacturing method
JP6261388B2 (ja) * 2014-03-05 2018-01-17 信越半導体株式会社 半導体エピタキシャルウェーハの製造方法

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