JP6139585B2 - 高周波モジュール及びマイクロ波送受信装置 - Google Patents
高周波モジュール及びマイクロ波送受信装置 Download PDFInfo
- Publication number
- JP6139585B2 JP6139585B2 JP2015043439A JP2015043439A JP6139585B2 JP 6139585 B2 JP6139585 B2 JP 6139585B2 JP 2015043439 A JP2015043439 A JP 2015043439A JP 2015043439 A JP2015043439 A JP 2015043439A JP 6139585 B2 JP6139585 B2 JP 6139585B2
- Authority
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- Prior art keywords
- microwave
- wiring board
- substrate
- multilayer wiring
- frequency module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000011889 copper foil Substances 0.000 description 10
- 238000004891 communication Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/03—Constructional details, e.g. casings, housings
- H04B1/036—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Transceivers (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Structure Of Printed Boards (AREA)
Description
11 モジュール本体
12 コネクタ
20 ケース
21 フレーム部
22 底板部
23 突出部
30 カバー
50 配線基板
51 マイクロ波伝播用多層配線基板
51a キャビティ
51b マイクロ波伝送路
51c パッド
51d サーマルスルーホール
51e 金属部材
52 マイクロ波高出力電力増幅器
52a 電極
53 マイクロ波能動デバイス
53a 放熱パッド
53b,53c 電極パッド
55 金属コア
60 端子
70 制御回路用多層配線基板
70a キャビティ
91 プリントダイポールアンテナ素子
92 通信装置
93 マイクロ波配線基板
120 ねじ
200 マイクロ波送受信装置
500 銅張積層板
510 絶縁樹脂層
510a 銅箔
510b 銅箔
550 金属層
800 プリプレグ
Claims (7)
- 開口が形成され、一側の面にマイクロ波を伝送する伝送回路が形成される第1基板と、
前記第1基板の開口に配置される第1デバイスと、
前記第1基板の他側に配置され、前記第1デバイスの制御回路が形成されるとともに、前記第1デバイスと重なるところに開口が形成される第2基板と、
前記第1基板と前記第2基板の間に配置され、前記第1デバイスが接する金属コアと、
前記第2基板に設けられる開口を介して、前記金属コアに接続される接続部を有する金属からなる筐体と、
を有する高周波モジュール。 - 前記第1デバイスは、いずれかの面が前記金属コアに密着している請求項1に記載の高周波モジュール。
- 前記第1デバイスは、電力増幅器である請求項2に記載の高周波モジュール。
- 前記第1基板には、前記第1デバイス以外の第2デバイスが実装され、前記第2デバイスは、前記第1基板に設けられた導体を介して、前記金属コアに接続されている請求項1乃至3のいずれか一項に記載の高周波モジュール。
- 前記第1基板に設けられた前記導体は、サーマルスルーホールである請求項4に記載の高周波モジュール。
- 前記第1基板に設けられた前記導体は、銅インレイである請求項4に記載の高周波モジュール。
- 請求項1乃至6のいずれか一項に記載の高周波モジュールを用いたマイクロ波送受信装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043439A JP6139585B2 (ja) | 2015-03-05 | 2015-03-05 | 高周波モジュール及びマイクロ波送受信装置 |
EP15202391.7A EP3065167B1 (en) | 2015-03-05 | 2015-12-23 | High-frequency module and microwave transceiver |
US15/057,325 US9621196B2 (en) | 2015-03-05 | 2016-03-01 | High-frequency module and microwave transceiver |
US15/444,385 US20170179982A1 (en) | 2015-03-05 | 2017-02-28 | High-frequency module and microwave transceiver |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043439A JP6139585B2 (ja) | 2015-03-05 | 2015-03-05 | 高周波モジュール及びマイクロ波送受信装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016163304A JP2016163304A (ja) | 2016-09-05 |
JP6139585B2 true JP6139585B2 (ja) | 2017-05-31 |
Family
ID=55174516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015043439A Expired - Fee Related JP6139585B2 (ja) | 2015-03-05 | 2015-03-05 | 高周波モジュール及びマイクロ波送受信装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9621196B2 (ja) |
EP (1) | EP3065167B1 (ja) |
JP (1) | JP6139585B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022086187A1 (ko) * | 2020-10-21 | 2022-04-28 | 주식회사 케이엠더블유 | 전력 증폭 장치 및 그것의 제조방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6322951B2 (ja) * | 2013-10-18 | 2018-05-16 | 株式会社デンソー | 車両電子装置 |
JP6139585B2 (ja) * | 2015-03-05 | 2017-05-31 | 株式会社東芝 | 高周波モジュール及びマイクロ波送受信装置 |
KR102554431B1 (ko) * | 2018-09-05 | 2023-07-13 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치 제조 방법 |
CN114080757B (zh) * | 2019-07-09 | 2023-12-22 | 株式会社村田制作所 | 高频模块和通信装置 |
JP2021158556A (ja) * | 2020-03-27 | 2021-10-07 | 株式会社村田製作所 | 高周波モジュールおよび通信装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5796165A (en) * | 1996-03-19 | 1998-08-18 | Matsushita Electronics Corporation | High-frequency integrated circuit device having a multilayer structure |
JP3582460B2 (ja) * | 2000-06-20 | 2004-10-27 | 株式会社村田製作所 | 高周波モジュール |
US6683512B2 (en) * | 2001-06-21 | 2004-01-27 | Kyocera Corporation | High frequency module having a laminate board with a plurality of dielectric layers |
JP2003100937A (ja) * | 2001-09-26 | 2003-04-04 | Hitachi Ltd | 高周波モジュール |
JP4119205B2 (ja) | 2002-08-27 | 2008-07-16 | 富士通株式会社 | 多層配線基板 |
JP2012209334A (ja) * | 2011-03-29 | 2012-10-25 | Toshiba Corp | ミリ波帯用薄型パッケージおよびその製造方法 |
JP2012235036A (ja) | 2011-05-09 | 2012-11-29 | Shimadzu Corp | 発熱部品搭載用の厚銅箔プリント配線基板およびその製造方法 |
JP2013098185A (ja) * | 2011-10-27 | 2013-05-20 | Ain:Kk | 放熱板付き配線板およびその製造方法 |
JP6015508B2 (ja) * | 2013-03-18 | 2016-10-26 | 富士通株式会社 | 高周波モジュール |
JP6139585B2 (ja) * | 2015-03-05 | 2017-05-31 | 株式会社東芝 | 高周波モジュール及びマイクロ波送受信装置 |
-
2015
- 2015-03-05 JP JP2015043439A patent/JP6139585B2/ja not_active Expired - Fee Related
- 2015-12-23 EP EP15202391.7A patent/EP3065167B1/en active Active
-
2016
- 2016-03-01 US US15/057,325 patent/US9621196B2/en active Active
-
2017
- 2017-02-28 US US15/444,385 patent/US20170179982A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022086187A1 (ko) * | 2020-10-21 | 2022-04-28 | 주식회사 케이엠더블유 | 전력 증폭 장치 및 그것의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US20170179982A1 (en) | 2017-06-22 |
US20160261292A1 (en) | 2016-09-08 |
EP3065167A1 (en) | 2016-09-07 |
EP3065167B1 (en) | 2021-03-24 |
US9621196B2 (en) | 2017-04-11 |
JP2016163304A (ja) | 2016-09-05 |
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