JP6130639B2 - 枯渇型電荷増倍ccd画像センサ - Google Patents
枯渇型電荷増倍ccd画像センサ Download PDFInfo
- Publication number
- JP6130639B2 JP6130639B2 JP2012211191A JP2012211191A JP6130639B2 JP 6130639 B2 JP6130639 B2 JP 6130639B2 JP 2012211191 A JP2012211191 A JP 2012211191A JP 2012211191 A JP2012211191 A JP 2012211191A JP 6130639 B2 JP6130639 B2 JP 6130639B2
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- JP
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- ccd
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161539123P | 2011-09-26 | 2011-09-26 | |
| US61/539,123 | 2011-09-26 | ||
| US13/623,316 US8847285B2 (en) | 2011-09-26 | 2012-09-20 | Depleted charge-multiplying CCD image sensor |
| US13/623,316 | 2012-09-20 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013093562A JP2013093562A (ja) | 2013-05-16 |
| JP2013093562A5 JP2013093562A5 (https=) | 2015-11-05 |
| JP6130639B2 true JP6130639B2 (ja) | 2017-05-17 |
Family
ID=47143521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012211191A Expired - Fee Related JP6130639B2 (ja) | 2011-09-26 | 2012-09-25 | 枯渇型電荷増倍ccd画像センサ |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8847285B2 (https=) |
| EP (1) | EP2573816B1 (https=) |
| JP (1) | JP6130639B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8847285B2 (en) * | 2011-09-26 | 2014-09-30 | Semiconductor Components Industries, Llc | Depleted charge-multiplying CCD image sensor |
| GB2551108A (en) * | 2016-05-06 | 2017-12-13 | Teledyne E2V (Uk) Ltd | Image sensor |
| US11595595B2 (en) | 2016-09-27 | 2023-02-28 | Rxsafe Llc | Verification system for a pharmacy packaging system |
| US10187593B2 (en) | 2016-09-27 | 2019-01-22 | Rxsafe Llc | Verification system for a pharmacy packaging system |
| US10003688B1 (en) | 2018-02-08 | 2018-06-19 | Capital One Services, Llc | Systems and methods for cluster-based voice verification |
| CN111405210B (zh) * | 2020-03-20 | 2022-01-28 | 中国电子科技集团公司第四十四研究所 | 像元级倍增内线帧转移ccd像素结构 |
| US12134494B2 (en) | 2022-01-03 | 2024-11-05 | Rxsafe, Llc | Verification system for a pharmacy packaging system |
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| JPS60244068A (ja) * | 1984-05-18 | 1985-12-03 | Nec Corp | 埋込みチヤネル電荷結合素子 |
| US4679212A (en) | 1984-07-31 | 1987-07-07 | Texas Instruments Incorporated | Method and apparatus for using surface trap recombination in solid state imaging devices |
| US5043819A (en) | 1989-12-05 | 1991-08-27 | Samsung Electronics Co., Ltd. | CCD solid state image sensor with two horizontal transfer CCDs corresponding to both odd and even columns of elements |
| JP2940034B2 (ja) * | 1989-12-09 | 1999-08-25 | 日本電気株式会社 | 電荷転送装置およびその製造方法 |
| US5250824A (en) | 1990-08-29 | 1993-10-05 | California Institute Of Technology | Ultra low-noise charge coupled device |
| JPH04260370A (ja) * | 1991-02-14 | 1992-09-16 | Sony Corp | 固体撮像装置 |
| DE69231482T2 (de) | 1991-07-11 | 2001-05-10 | Texas Instruments Inc | Für einen CCD-Bildsensor mit kleiner Bildpunktgrösse geeigneter Ladungsvervielfachungsdetektor (CMD) |
| KR100259063B1 (ko) | 1992-06-12 | 2000-06-15 | 김영환 | Ccd 영상소자 |
| DE69512863T2 (de) * | 1994-11-11 | 2000-04-20 | Sanyo Electric Co., Ltd. | Festkörper-Bildaufnahmevorrichtung und Ansteuerverfahren dafür |
| KR0172854B1 (ko) | 1995-08-02 | 1999-02-01 | 문정환 | 씨씨디 고체촬상소자 및 그의 신호처리방법 |
| US5708282A (en) | 1995-08-07 | 1998-01-13 | Q-Dot, Inc. | CCD charge splitter |
| US5693968A (en) | 1996-07-10 | 1997-12-02 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Bi-directional, fast-timing, charge coupled device |
| US6259085B1 (en) | 1996-11-01 | 2001-07-10 | The Regents Of The University Of California | Fully depleted back illuminated CCD |
| US5965910A (en) | 1997-04-29 | 1999-10-12 | Ohmeda Inc. | Large cell charge coupled device for spectroscopy |
| WO2000069324A1 (en) | 1999-05-18 | 2000-11-23 | Olympus Optical Co., Ltd. | Endoscope |
| US6278142B1 (en) | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
| US6680222B2 (en) | 1999-11-05 | 2004-01-20 | Isetex, Inc | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making |
| JP4515617B2 (ja) | 2000-10-23 | 2010-08-04 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
| US7139023B2 (en) | 2001-03-12 | 2006-11-21 | Texas Instruments Incorporated | High dynamic range charge readout system |
| US6784412B2 (en) | 2001-08-29 | 2004-08-31 | Texas Instruments Incorporated | Compact image sensor layout with charge multiplying register |
| US6624453B2 (en) | 2001-08-31 | 2003-09-23 | Eastman Kodak Company | Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage |
| JP3689866B2 (ja) | 2002-05-30 | 2005-08-31 | 日本テキサス・インスツルメンツ株式会社 | Cmd及びcmd搭載ccd装置 |
| ATE401666T1 (de) | 2002-09-19 | 2008-08-15 | Quantum Semiconductor Llc | Licht-detektierende vorrichtung |
| JP2003333605A (ja) * | 2003-04-25 | 2003-11-21 | Olympus Optical Co Ltd | 撮像装置 |
| JP4343594B2 (ja) | 2003-06-23 | 2009-10-14 | オリンパス株式会社 | 内視鏡装置 |
| US20050029553A1 (en) | 2003-08-04 | 2005-02-10 | Jaroslav Hynecek | Clocked barrier virtual phase charge coupled device image sensor |
| US7078670B2 (en) | 2003-09-15 | 2006-07-18 | Imagerlabs, Inc. | Low noise charge gain circuit and CCD using same |
| US7233393B2 (en) | 2004-08-05 | 2007-06-19 | Applera Corporation | Signal noise reduction for imaging in biological analysis |
| GB2413007A (en) | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
| WO2005120049A2 (en) | 2004-05-28 | 2005-12-15 | Transoma Medical, Inc. | Ccd-based low noise parametric amplifier |
| US7352840B1 (en) | 2004-06-21 | 2008-04-01 | Radiation Monitoring Devices, Inc. | Micro CT scanners incorporating internal gain charge-coupled devices |
| JP4442608B2 (ja) | 2004-07-20 | 2010-03-31 | 株式会社島津製作所 | 固体撮像装置、撮像装置並びに撮像素子 |
| US7522205B2 (en) | 2004-09-10 | 2009-04-21 | Eastman Kodak Company | Image sensor with charge multiplication |
| JP4807259B2 (ja) | 2004-10-07 | 2011-11-02 | 株式会社島津製作所 | 撮像素子およびそれを用いた撮像装置、並びに撮像素子を製造する製造方法 |
| CA2584186A1 (en) | 2004-10-18 | 2006-08-31 | Macquarie University | Fluorescence detection |
| GB0501149D0 (en) | 2005-01-20 | 2005-02-23 | Andor Technology Plc | Automatic calibration of electron multiplying CCds |
| US7271468B2 (en) * | 2005-02-16 | 2007-09-18 | The Regents Of The University Of California | High-voltage compatible, full-depleted CCD |
| JP2006261638A (ja) | 2005-02-21 | 2006-09-28 | Sony Corp | 固体撮像装置および固体撮像装置の駆動方法 |
| GB2431538B (en) | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
| JP4358182B2 (ja) | 2005-11-29 | 2009-11-04 | 株式会社日立国際電気 | 撮像装置およびその雑音低減方法 |
| WO2008011617A2 (en) | 2006-07-21 | 2008-01-24 | The Regents Of The University Of California | Shallow-trench-isolation (sti)-bounded single-photon avalanche photodetectors |
| JP2008060550A (ja) | 2006-07-31 | 2008-03-13 | Sanyo Electric Co Ltd | 撮像装置 |
| JP5037078B2 (ja) | 2006-09-15 | 2012-09-26 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
| US7485840B2 (en) | 2007-02-08 | 2009-02-03 | Dalsa Corporation | Semiconductor charge multiplication amplifier device and semiconductor image sensor provided with such an amplifier device |
| US20080309808A1 (en) | 2007-06-18 | 2008-12-18 | Daisuke Kusuda | Method of driving ccd solid-state image pickup device, and image pickup apparatus |
| US8017917B2 (en) | 2007-10-29 | 2011-09-13 | The Board Of Trustees Of The University Of Illinois | Ionizing radiation sensor |
| JP5296406B2 (ja) | 2008-04-02 | 2013-09-25 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| JP2010034512A (ja) | 2008-07-01 | 2010-02-12 | Fujifilm Corp | 固体撮像素子及び撮像装置 |
| JP2010087366A (ja) * | 2008-10-01 | 2010-04-15 | Kobe Steel Ltd | 軟磁性複合材料用金属粉末および軟磁性複合材料 |
| JP5243983B2 (ja) | 2009-01-30 | 2013-07-24 | 浜松ホトニクス株式会社 | 電子増倍機能内蔵型の固体撮像素子 |
| EP2216817B1 (fr) | 2009-02-05 | 2014-01-08 | STMicroelectronics (Crolles 2) SAS | Capteur d'images à semiconducteur à éclairement par la face arrière |
| JP5427541B2 (ja) | 2009-10-08 | 2014-02-26 | 富士フイルム株式会社 | 固体撮像素子及びその製造方法並びに撮像装置 |
| US8294802B2 (en) | 2009-10-30 | 2012-10-23 | Truesense Imaging, Inc. | CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register |
| US8773564B2 (en) | 2010-12-14 | 2014-07-08 | Truesense Imaging, Inc. | Image sensor with charge multiplication |
| US8847285B2 (en) * | 2011-09-26 | 2014-09-30 | Semiconductor Components Industries, Llc | Depleted charge-multiplying CCD image sensor |
-
2012
- 2012-09-20 US US13/623,316 patent/US8847285B2/en not_active Expired - Fee Related
- 2012-09-25 JP JP2012211191A patent/JP6130639B2/ja not_active Expired - Fee Related
- 2012-09-26 EP EP12186073.8A patent/EP2573816B1/en not_active Not-in-force
-
2014
- 2014-04-01 US US14/231,839 patent/US9117729B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013093562A (ja) | 2013-05-16 |
| EP2573816A2 (en) | 2013-03-27 |
| US9117729B2 (en) | 2015-08-25 |
| US8847285B2 (en) | 2014-09-30 |
| US20130075791A1 (en) | 2013-03-28 |
| EP2573816B1 (en) | 2018-02-28 |
| US20140231881A1 (en) | 2014-08-21 |
| EP2573816A3 (en) | 2014-05-07 |
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