JP6107870B2 - 瞳強度分布調整方法、露光方法及びデバイス製造方法 - Google Patents
瞳強度分布調整方法、露光方法及びデバイス製造方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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Description
これによって、実際に得られている照明輝度分布Ψ(ξ,η)の持つ結像性能を本来得たい照明輝度分布ΨDESIGN(ξ,η)による結像性能に実効的に近づけるという目的で、各変調パラメータZiの値から決まる照明輝度分布の追加的な微小変調を空間光変調器3Sに対して行なう事が可能になる(OPEマッチング)。
Claims (13)
- 物体上にパターンの像を形成する際の照明瞳における瞳強度分布を調整する瞳強度分布調整方法であって、
パターン及び瞳強度分布を用いて算出された第1瞳強度分布を目標とし、該目標からのずれが許容範囲内になるような第2瞳強度分布を前記照明瞳に設定することと、
前記パターン及び前記第2瞳強度分布を用いて、前記パターンの像の結像状態を評価することと、
前記結像状態の評価結果に基づいて、前記パターンの像の結像状態の変化と、前記第2瞳強度分布と前記第1瞳強度分布との差を表現する多項式の各項の係数との関係を用いて前記結像状態が許容範囲内となるように前記多項式の各項の係数を算出することにより、前記第2瞳強度分布を調整することと、を含む瞳強度分布調整方法。 - 前記多項式として、ツェルニケ多項式とディストーション多項式とのいずれかが用いられる請求項1に記載の瞳強度分布調整方法。
- 前記結像状態は、前記パターンの像の線幅の設計上の線幅に対する誤差を評価指標として評価される請求項1又は2に記載の瞳強度分布調整方法。
- 前記瞳強度分布は、照明光を前記物体上に照射する光学系の瞳面上での前記照明光の強度分布により定義され、
前記第2瞳強度分布を設定することでは、前記パターン及び瞳強度分布を最適化する最適化計算の結果として得られた前記第1瞳強度分布を再現するよう前記第2瞳強度分布が制御される請求項1〜3のいずれか一項に記載の瞳強度分布調整方法。 - 前記第2瞳強度分布は、照明光を分割して反射する複数のミラー素子を有する光変調器によって設定され、
前記第2瞳強度分布を設定することでは、前記第1瞳強度分布を目標として前記複数のミラー素子の位置が個別に制御される請求項4に記載の瞳強度分布調整方法。 - 前記第2瞳強度分布は、照明光を回折する回折光学素子を有する光変調器と、該光変調器からの回折された照明光を前記光学系の瞳面に導くリレー光学系とによって設定され、
前記第2瞳強度分布を設定することでは、前記第1瞳強度分布を目標として前記回折光学素子の位置又は前記リレー光学系中の光学部材が制御される請求項4に記載の瞳強度分布調整方法。 - 前記第2瞳強度分布を設定することでは、前記第1瞳強度分布を目標とする前記第2瞳強度分布の設定、設定された第2瞳強度分布の実測、及び実測された第2瞳強度分布の前記第1瞳強度分布からのずれが許容範囲内か否かの判断が、少なくとも1回行われる請求項1〜6のいずれか一項に記載の瞳強度分布調整方法。
- 前記結像状態を評価することでは、前記パターンの像を前記物体上に形成するための転写が行われ、転写された前記パターンの像が実測される請求項1〜7のいずれか一項に記載の瞳強度分布調整方法。
- 前記結像状態を評価することでは、前記パターンの像が前記物体上に投影され、投影された前記パターンの像が検出される請求項1〜7のいずれか一項に記載の瞳強度分布調整方法。
- 前記第2瞳強度分布を設定することと、前記結像状態を評価することと、前記瞳強度分布を最適化することと、を、所望の前記結像状態が得られるまで繰り返す請求項1〜9のいずれか一項に記載の瞳強度分布調整方法。
- 前記第2瞳強度分布と、前記パターン及び瞳強度分布を最適化する最適化計算の結果として得られたパターンと、を用いて前記得られたパターンの像を前記物体上に形成するシミュレーションを行って、前記パターンの像の結像状態を予測することと、
前記結像状態の予測結果に基づいて、前記瞳強度分布を調整することと、をさらに含む請求項1〜10のいずれか一項に記載の瞳強度分布調整方法。 - 請求項1〜11のいずれか一項に記載の瞳強度分布調整方法により調整された瞳強度分布の照明光を照射して前記パターンを物体上に転写する露光方法。
- 請求項12に記載の露光方法を用いて、物体上にパターンを形成することと、
前記パターンが形成された前記物体を現像することと、を含むデバイス製造方法。
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- 2011-02-14 WO PCT/JP2011/000813 patent/WO2011102109A1/ja active Application Filing
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KR20120116329A (ko) | 2012-10-22 |
JP2015172750A (ja) | 2015-10-01 |
WO2011102109A1 (ja) | 2011-08-25 |
US20120133915A1 (en) | 2012-05-31 |
JPWO2011102109A1 (ja) | 2013-06-17 |
US9551938B2 (en) | 2017-01-24 |
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