JP2015172750A - 光源調整方法、露光方法及びデバイス製造方法 - Google Patents
光源調整方法、露光方法及びデバイス製造方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】マスクのパターン及び照明光源を最適化する最適化計算の手法であるSMOの結果(SMO解)として得られた光源形状を目標とし、該目標からのずれが許容範囲内になるように空間光変調器を制御して照明光源の形状(光源形状)を設定し(ステップ202〜212)、その設定された光源形状を有する照明光源からの照明光を用いてSMOの結果(SMO解)として得られたパターンの像をウエハ上に形成し、形成されたパターンの像を検出した検出結果(線幅誤差)を評価指標として用いて結像性能としてOPEを評価し(ステップ220、222)、OPEの評価結果に基づいて光源形状が最適化される(ステップ222、218)。
【選択図】図9
Description
これによって、実際に得られている照明輝度分布Ψ(ξ,η)の持つ結像性能を本来得たい照明輝度分布ΨDESIGN(ξ,η)による結像性能に実効的に近づけるという目的で、各変調パラメータZiの値から決まる照明輝度分布の追加的な微小変調を空間光変調器3Sに対して行なう事が可能になる(OPEマッチング)。
Claims (1)
- 物体上にパターンを形成するための照明光源の形状である光源形状を最適化する光源最適化方法であって、
パターン及び前記照明光源を最適化する最適化計算の結果として得られた前記光源形状を目標とし、該目標からのずれが許容範囲内になるように前記光源形状を設定することと、
設定された前記光源形状を有する前記照明光源からの照明光を用いて前記最適化計算の手法によって決定されたパターンの像を前記物体上に形成し、形成されたパターンの像を検出した検出結果を用いて結像性能を評価することと、
前記結像性能の評価結果に基づいて前記光源形状を最適化することと、
を含む光源最適化方法。
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JP2015077395A Active JP6107870B2 (ja) | 2010-02-20 | 2015-04-06 | 瞳強度分布調整方法、露光方法及びデバイス製造方法 |
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US (1) | US9551938B2 (ja) |
JP (2) | JP5842808B2 (ja) |
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WO (1) | WO2011102109A1 (ja) |
Cited By (2)
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WO2019082727A1 (ja) * | 2017-10-24 | 2019-05-02 | キヤノン株式会社 | 露光装置および物品の製造方法 |
US11099488B2 (en) | 2017-10-24 | 2021-08-24 | Canon Kabushiki Kaisha | Exposure apparatus and article manufacturing method |
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JP6051399B2 (ja) * | 2014-07-17 | 2016-12-27 | 関根 弘一 | 固体撮像装置及びその製造方法 |
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US9818168B2 (en) * | 2015-03-24 | 2017-11-14 | Applied Materials, Inc. | Data tuning for fast computation and polygonal manipulation simplification |
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JP6883655B2 (ja) | 2017-02-03 | 2021-06-09 | エーエスエムエル ネザーランズ ビー.ブイ. | 露光装置 |
JP2019079030A (ja) * | 2017-10-24 | 2019-05-23 | キヤノン株式会社 | 露光装置および物品の製造方法 |
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Also Published As
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JPWO2011102109A1 (ja) | 2013-06-17 |
JP5842808B2 (ja) | 2016-01-13 |
US9551938B2 (en) | 2017-01-24 |
KR20120116329A (ko) | 2012-10-22 |
JP6107870B2 (ja) | 2017-04-12 |
US20120133915A1 (en) | 2012-05-31 |
WO2011102109A1 (ja) | 2011-08-25 |
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