JP6094511B2 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
JP6094511B2
JP6094511B2 JP2014034369A JP2014034369A JP6094511B2 JP 6094511 B2 JP6094511 B2 JP 6094511B2 JP 2014034369 A JP2014034369 A JP 2014034369A JP 2014034369 A JP2014034369 A JP 2014034369A JP 6094511 B2 JP6094511 B2 JP 6094511B2
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Japan
Prior art keywords
potential
pixel
transistor
unit
pixel region
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JP2014034369A
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English (en)
Japanese (ja)
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JP2015159501A5 (enExample
JP2015159501A (ja
Inventor
洋介 植野
洋介 植野
裕介 池田
裕介 池田
静徳 松本
静徳 松本
勉 春田
勉 春田
吉川　玲
玲 吉川
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Sony Corp
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Sony Corp
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Priority to JP2014034369A priority Critical patent/JP6094511B2/ja
Priority to TW104104823A priority patent/TWI656630B/zh
Priority to PCT/JP2015/000720 priority patent/WO2015129197A1/en
Priority to KR1020227004827A priority patent/KR102503871B1/ko
Priority to US15/118,956 priority patent/US10008525B2/en
Priority to KR1020237005817A priority patent/KR102551950B1/ko
Priority to EP15709558.9A priority patent/EP3111479B1/en
Priority to CN201910504668.2A priority patent/CN110248122B/zh
Priority to KR1020167021504A priority patent/KR102369400B1/ko
Priority to CN201910504605.7A priority patent/CN110190081B/zh
Priority to EP22215435.3A priority patent/EP4181204A1/en
Priority to EP19174781.5A priority patent/EP3547370B1/en
Priority to CN201580007518.0A priority patent/CN106030803B/zh
Publication of JP2015159501A publication Critical patent/JP2015159501A/ja
Publication of JP2015159501A5 publication Critical patent/JP2015159501A5/ja
Application granted granted Critical
Publication of JP6094511B2 publication Critical patent/JP6094511B2/ja
Priority to US15/982,717 priority patent/US10529756B2/en
Priority to US16/698,615 priority patent/US10840283B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014034369A 2014-02-25 2014-02-25 撮像素子および撮像装置 Active JP6094511B2 (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
JP2014034369A JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置
TW104104823A TWI656630B (zh) 2014-02-25 2015-02-12 成像元件及成像裝置
EP19174781.5A EP3547370B1 (en) 2014-02-25 2015-02-17 Imaging element
US15/118,956 US10008525B2 (en) 2014-02-25 2015-02-17 Imaging element and imaging apparatus
KR1020237005817A KR102551950B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치
EP15709558.9A EP3111479B1 (en) 2014-02-25 2015-02-17 Imaging element and imaging apparatus
CN201910504668.2A CN110248122B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置
KR1020167021504A KR102369400B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치
PCT/JP2015/000720 WO2015129197A1 (en) 2014-02-25 2015-02-17 Imaging element and imaging apparatus
EP22215435.3A EP4181204A1 (en) 2014-02-25 2015-02-17 Imaging element and imaging apparatus
KR1020227004827A KR102503871B1 (ko) 2014-02-25 2015-02-17 촬상 소자 및 촬상 장치
CN201580007518.0A CN106030803B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置
CN201910504605.7A CN110190081B (zh) 2014-02-25 2015-02-17 摄像元件和电子装置
US15/982,717 US10529756B2 (en) 2014-02-25 2018-05-17 Imaging element and imaging apparatus
US16/698,615 US10840283B2 (en) 2014-02-25 2019-11-27 Imaging element and imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014034369A JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置

Publications (3)

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JP2015159501A JP2015159501A (ja) 2015-09-03
JP2015159501A5 JP2015159501A5 (enExample) 2016-02-18
JP6094511B2 true JP6094511B2 (ja) 2017-03-15

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JP2014034369A Active JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置

Country Status (7)

Country Link
US (3) US10008525B2 (enExample)
EP (3) EP3111479B1 (enExample)
JP (1) JP6094511B2 (enExample)
KR (3) KR102503871B1 (enExample)
CN (3) CN110248122B (enExample)
TW (1) TWI656630B (enExample)
WO (1) WO2015129197A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置
US9960783B2 (en) * 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
CN113099141B (zh) * 2015-09-30 2024-06-11 株式会社尼康 摄像元件
JP6646824B2 (ja) * 2016-01-22 2020-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置
WO2020183809A1 (ja) * 2019-03-13 2020-09-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器、および、固体撮像装置の制御方法
KR20210034918A (ko) * 2019-09-23 2021-03-31 삼성전자주식회사 전하 펌프 회로 및 이를 포함하는 이미지 센서
EP3828846B1 (en) * 2019-11-26 2022-07-13 Axis AB Camera device
US12137297B2 (en) 2019-12-02 2024-11-05 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
US11095843B2 (en) * 2019-12-02 2021-08-17 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
WO2021153428A1 (ja) 2020-01-29 2021-08-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器及び撮像方法
WO2021161791A1 (ja) * 2020-02-13 2021-08-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および撮像装置
WO2023002566A1 (ja) 2021-07-20 2023-01-26 オリンパスメディカルシステムズ株式会社 撮像装置、スコープ、および内視鏡システム
JP2023142256A (ja) * 2022-03-24 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び半導体装置の製造方法
US20230411431A1 (en) * 2022-05-17 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor and method of manufacturing the same
JPWO2024176641A1 (enExample) 2023-02-24 2024-08-29

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JP3951879B2 (ja) * 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
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Also Published As

Publication number Publication date
TW201535702A (zh) 2015-09-16
KR102503871B1 (ko) 2023-02-27
EP3547370A1 (en) 2019-10-02
US10529756B2 (en) 2020-01-07
EP3111479A1 (en) 2017-01-04
JP2015159501A (ja) 2015-09-03
EP3111479B1 (en) 2019-05-22
US20170053957A1 (en) 2017-02-23
KR102551950B1 (ko) 2023-07-06
CN106030803B (zh) 2019-07-12
US20180269243A1 (en) 2018-09-20
CN106030803A (zh) 2016-10-12
KR102369400B1 (ko) 2022-03-04
CN110190081A (zh) 2019-08-30
CN110190081B (zh) 2020-12-18
TWI656630B (zh) 2019-04-11
CN110248122B (zh) 2021-09-17
WO2015129197A1 (en) 2015-09-03
US10008525B2 (en) 2018-06-26
CN110248122A (zh) 2019-09-17
US20200098805A1 (en) 2020-03-26
EP4181204A1 (en) 2023-05-17
EP3547370B1 (en) 2023-06-28
KR20160125954A (ko) 2016-11-01
KR20220025915A (ko) 2022-03-03
US10840283B2 (en) 2020-11-17
KR20230030034A (ko) 2023-03-03

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