TWI656630B - 成像元件及成像裝置 - Google Patents

成像元件及成像裝置 Download PDF

Info

Publication number
TWI656630B
TWI656630B TW104104823A TW104104823A TWI656630B TW I656630 B TWI656630 B TW I656630B TW 104104823 A TW104104823 A TW 104104823A TW 104104823 A TW104104823 A TW 104104823A TW I656630 B TWI656630 B TW I656630B
Authority
TW
Taiwan
Prior art keywords
potential
transistor
pixel
unit
negative
Prior art date
Application number
TW104104823A
Other languages
English (en)
Chinese (zh)
Other versions
TW201535702A (zh
Inventor
植野洋介
池田裕介
松本靜德
春田勉
吉川玲
Original Assignee
日商新力股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商新力股份有限公司 filed Critical 日商新力股份有限公司
Publication of TW201535702A publication Critical patent/TW201535702A/zh
Application granted granted Critical
Publication of TWI656630B publication Critical patent/TWI656630B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW104104823A 2014-02-25 2015-02-12 成像元件及成像裝置 TWI656630B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-034369 2014-02-25
JP2014034369A JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置

Publications (2)

Publication Number Publication Date
TW201535702A TW201535702A (zh) 2015-09-16
TWI656630B true TWI656630B (zh) 2019-04-11

Family

ID=52669640

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104104823A TWI656630B (zh) 2014-02-25 2015-02-12 成像元件及成像裝置

Country Status (7)

Country Link
US (3) US10008525B2 (enExample)
EP (3) EP3111479B1 (enExample)
JP (1) JP6094511B2 (enExample)
KR (3) KR102503871B1 (enExample)
CN (3) CN110248122B (enExample)
TW (1) TWI656630B (enExample)
WO (1) WO2015129197A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置
US9960783B2 (en) * 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
CN113099141B (zh) * 2015-09-30 2024-06-11 株式会社尼康 摄像元件
JP6646824B2 (ja) * 2016-01-22 2020-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置
WO2020183809A1 (ja) * 2019-03-13 2020-09-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器、および、固体撮像装置の制御方法
KR20210034918A (ko) * 2019-09-23 2021-03-31 삼성전자주식회사 전하 펌프 회로 및 이를 포함하는 이미지 센서
EP3828846B1 (en) * 2019-11-26 2022-07-13 Axis AB Camera device
US12137297B2 (en) 2019-12-02 2024-11-05 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
US11095843B2 (en) * 2019-12-02 2021-08-17 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
WO2021153428A1 (ja) 2020-01-29 2021-08-05 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器及び撮像方法
WO2021161791A1 (ja) * 2020-02-13 2021-08-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および撮像装置
WO2023002566A1 (ja) 2021-07-20 2023-01-26 オリンパスメディカルシステムズ株式会社 撮像装置、スコープ、および内視鏡システム
JP2023142256A (ja) * 2022-03-24 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び半導体装置の製造方法
US20230411431A1 (en) * 2022-05-17 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor and method of manufacturing the same
JPWO2024176641A1 (enExample) 2023-02-24 2024-08-29

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070051988A1 (en) * 2005-09-02 2007-03-08 Fumihiko Koga Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus
US20090128224A1 (en) * 2007-11-06 2009-05-21 Kabushiki Kaisha Toshiba Semiconductor device
TW201002057A (en) * 2008-04-03 2010-01-01 Sony Corp Solid state imaging device, driving method of the solid state imaging device, and electronic equipment
US20130248954A1 (en) * 2012-03-21 2013-09-26 Samsung Electronics Co., Ltd. Unit Pixel of Image Sensor and Image Sensor Including the Same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3618248B2 (ja) * 1999-03-26 2005-02-09 シャープ株式会社 増幅型固体撮像装置用出力回路
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
JP3951879B2 (ja) * 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
JP4848739B2 (ja) * 2005-11-01 2011-12-28 ソニー株式会社 物理量検出装置および撮像装置
US20070129067A1 (en) 2005-11-04 2007-06-07 Summer Robert D Ring-tone system and methodology
KR100871714B1 (ko) 2005-12-05 2008-12-05 한국전자통신연구원 트랜스퍼 트랜지스터 및 이를 구비한 저잡음 이미지 센서
TWI479887B (zh) * 2007-05-24 2015-04-01 Sony Corp 背向照明固態成像裝置及照相機
JP2009253559A (ja) * 2008-04-03 2009-10-29 Sharp Corp 固体撮像装置および電子情報機器
JP2013090127A (ja) * 2011-10-18 2013-05-13 Olympus Corp 固体撮像装置および撮像装置
JP6018376B2 (ja) * 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
JP5973758B2 (ja) * 2012-03-22 2016-08-23 オリンパス株式会社 固体撮像装置
JP5421475B2 (ja) * 2012-07-04 2014-02-19 誠 雫石 撮像素子、半導体集積回路及び撮像装置
JP6083977B2 (ja) * 2012-08-23 2017-02-22 オリンパス株式会社 固体撮像装置および撮像装置
JP6176990B2 (ja) * 2013-04-25 2017-08-09 オリンパス株式会社 固体撮像装置および撮像装置
JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070051988A1 (en) * 2005-09-02 2007-03-08 Fumihiko Koga Solid-state imaging device, drive method of solid-state imaging device, and imaging apparatus
US20090128224A1 (en) * 2007-11-06 2009-05-21 Kabushiki Kaisha Toshiba Semiconductor device
TW201002057A (en) * 2008-04-03 2010-01-01 Sony Corp Solid state imaging device, driving method of the solid state imaging device, and electronic equipment
US20130248954A1 (en) * 2012-03-21 2013-09-26 Samsung Electronics Co., Ltd. Unit Pixel of Image Sensor and Image Sensor Including the Same

Also Published As

Publication number Publication date
TW201535702A (zh) 2015-09-16
KR102503871B1 (ko) 2023-02-27
EP3547370A1 (en) 2019-10-02
US10529756B2 (en) 2020-01-07
EP3111479A1 (en) 2017-01-04
JP2015159501A (ja) 2015-09-03
EP3111479B1 (en) 2019-05-22
US20170053957A1 (en) 2017-02-23
KR102551950B1 (ko) 2023-07-06
CN106030803B (zh) 2019-07-12
US20180269243A1 (en) 2018-09-20
CN106030803A (zh) 2016-10-12
KR102369400B1 (ko) 2022-03-04
CN110190081A (zh) 2019-08-30
CN110190081B (zh) 2020-12-18
CN110248122B (zh) 2021-09-17
WO2015129197A1 (en) 2015-09-03
JP6094511B2 (ja) 2017-03-15
US10008525B2 (en) 2018-06-26
CN110248122A (zh) 2019-09-17
US20200098805A1 (en) 2020-03-26
EP4181204A1 (en) 2023-05-17
EP3547370B1 (en) 2023-06-28
KR20160125954A (ko) 2016-11-01
KR20220025915A (ko) 2022-03-03
US10840283B2 (en) 2020-11-17
KR20230030034A (ko) 2023-03-03

Similar Documents

Publication Publication Date Title
TWI656630B (zh) 成像元件及成像裝置
US9973700B2 (en) Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus
US7839439B2 (en) Solid-state imaging device and imaging device
US9117728B2 (en) Solid-state imaging device, method of manufacturing same, and electronic apparatus
CN106464819B (zh) 信号处理器件、控制方法、图像传感器件和电子设备
JP7162251B2 (ja) 撮像装置
CN109983583B (zh) 成像元件和电子设备
JP2016015680A (ja) 固体撮像素子および撮像装置
JP2023067988A (ja) 撮像素子
JP6375613B2 (ja) 固体撮像素子及び撮像装置
JP2015100004A (ja) 固体撮像素子及び撮像装置