CN110190081B - 摄像元件和电子装置 - Google Patents

摄像元件和电子装置 Download PDF

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Publication number
CN110190081B
CN110190081B CN201910504605.7A CN201910504605A CN110190081B CN 110190081 B CN110190081 B CN 110190081B CN 201910504605 A CN201910504605 A CN 201910504605A CN 110190081 B CN110190081 B CN 110190081B
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potential
transistor
pixel
well
negative
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CN110190081A (zh
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植野洋介
池田裕介
松本静德
春田勉
吉川玲
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201910504605.7A 2014-02-25 2015-02-17 摄像元件和电子装置 Active CN110190081B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014034369A JP6094511B2 (ja) 2014-02-25 2014-02-25 撮像素子および撮像装置
JP2014-034369 2014-02-25
CN201580007518.0A CN106030803B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置

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CN201580007518.0A Division CN106030803B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置

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CN110190081A CN110190081A (zh) 2019-08-30
CN110190081B true CN110190081B (zh) 2020-12-18

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CN201580007518.0A Active CN106030803B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置
CN201910504668.2A Active CN110248122B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置

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CN201910504668.2A Active CN110248122B (zh) 2014-02-25 2015-02-17 摄像元件和摄像装置

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US (3) US10008525B2 (enExample)
EP (3) EP3111479B1 (enExample)
JP (1) JP6094511B2 (enExample)
KR (3) KR102551950B1 (enExample)
CN (3) CN110190081B (enExample)
TW (1) TWI656630B (enExample)
WO (1) WO2015129197A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置
US9960783B2 (en) * 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
KR102114629B1 (ko) * 2015-09-30 2020-05-25 가부시키가이샤 니콘 촬상 소자 및 전자 카메라
JP6646824B2 (ja) * 2016-01-22 2020-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置
WO2019167551A1 (ja) * 2018-02-28 2019-09-06 パナソニックＩｐマネジメント株式会社 撮像装置
EP3941033A4 (en) * 2019-03-13 2022-04-06 Sony Semiconductor Solutions Corporation SOLID STATE IMAGING DEVICE, ELECTRONIC DEVICE AND METHOD FOR CONTROLLING A SOLID STATE IMAGING DEVICE
KR20210034918A (ko) * 2019-09-23 2021-03-31 삼성전자주식회사 전하 펌프 회로 및 이를 포함하는 이미지 센서
EP3828846B1 (en) * 2019-11-26 2022-07-13 Axis AB Camera device
US12137297B2 (en) 2019-12-02 2024-11-05 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
US11095843B2 (en) * 2019-12-02 2021-08-17 Sony Semiconductor Solutions Corporation Imaging devices and imaging apparatuses, and methods for the same
CN115004688B (zh) 2020-01-29 2025-10-21 索尼半导体解决方案公司 成像装置、电子装置和成像方法
JPWO2021161791A1 (enExample) * 2020-02-13 2021-08-19
WO2023002566A1 (ja) 2021-07-20 2023-01-26 オリンパスメディカルシステムズ株式会社 撮像装置、スコープ、および内視鏡システム
JP2023142256A (ja) * 2022-03-24 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び半導体装置の製造方法
US20230411431A1 (en) * 2022-05-17 2023-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked cmos image sensor and method of manufacturing the same
WO2024176641A1 (ja) * 2023-02-24 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
CN102186024A (zh) * 2005-11-01 2011-09-14 索尼株式会社 物理量检测装置和成像设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3618248B2 (ja) * 1999-03-26 2005-02-09 シャープ株式会社 増幅型固体撮像装置用出力回路
JP3951879B2 (ja) * 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
JP4807014B2 (ja) * 2005-09-02 2011-11-02 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20070129067A1 (en) 2005-11-04 2007-06-07 Summer Robert D Ring-tone system and methodology
KR100871714B1 (ko) * 2005-12-05 2008-12-05 한국전자통신연구원 트랜스퍼 트랜지스터 및 이를 구비한 저잡음 이미지 센서
TWI479887B (zh) * 2007-05-24 2015-04-01 新力股份有限公司 背向照明固態成像裝置及照相機
JP2009117613A (ja) * 2007-11-06 2009-05-28 Toshiba Corp 半導体装置
JP5568880B2 (ja) 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP2009253559A (ja) * 2008-04-03 2009-10-29 Sharp Corp 固体撮像装置および電子情報機器
JP2013090127A (ja) * 2011-10-18 2013-05-13 Olympus Corp 固体撮像装置および撮像装置
JP6018376B2 (ja) * 2011-12-05 2016-11-02 キヤノン株式会社 固体撮像装置およびカメラ
KR20130106978A (ko) * 2012-03-21 2013-10-01 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
JP5973758B2 (ja) * 2012-03-22 2016-08-23 オリンパス株式会社 固体撮像装置
JP5421475B2 (ja) * 2012-07-04 2014-02-19 誠 雫石 撮像素子、半導体集積回路及び撮像装置
JP6083977B2 (ja) * 2012-08-23 2017-02-22 オリンパス株式会社 固体撮像装置および撮像装置
JP6176990B2 (ja) * 2013-04-25 2017-08-09 オリンパス株式会社 固体撮像装置および撮像装置
JP6094511B2 (ja) * 2014-02-25 2017-03-15 ソニー株式会社 撮像素子および撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003023573A (ja) * 2001-07-11 2003-01-24 Asahi Kasei Corp ビジョンチップ
CN102186024A (zh) * 2005-11-01 2011-09-14 索尼株式会社 物理量检测装置和成像设备

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Publication number Publication date
EP3111479A1 (en) 2017-01-04
EP3547370B1 (en) 2023-06-28
CN106030803B (zh) 2019-07-12
TWI656630B (zh) 2019-04-11
EP4181204A1 (en) 2023-05-17
CN110190081A (zh) 2019-08-30
KR20160125954A (ko) 2016-11-01
WO2015129197A1 (en) 2015-09-03
KR102369400B1 (ko) 2022-03-04
KR20230030034A (ko) 2023-03-03
US20180269243A1 (en) 2018-09-20
KR102503871B1 (ko) 2023-02-27
CN110248122B (zh) 2021-09-17
JP2015159501A (ja) 2015-09-03
KR102551950B1 (ko) 2023-07-06
TW201535702A (zh) 2015-09-16
CN106030803A (zh) 2016-10-12
KR20220025915A (ko) 2022-03-03
US20170053957A1 (en) 2017-02-23
US20200098805A1 (en) 2020-03-26
JP6094511B2 (ja) 2017-03-15
EP3547370A1 (en) 2019-10-02
US10008525B2 (en) 2018-06-26
EP3111479B1 (en) 2019-05-22
US10840283B2 (en) 2020-11-17
CN110248122A (zh) 2019-09-17
US10529756B2 (en) 2020-01-07

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