JP6093446B2 - 基板を清浄化するためのプロセスガスの生成 - Google Patents

基板を清浄化するためのプロセスガスの生成 Download PDF

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Publication number
JP6093446B2
JP6093446B2 JP2015535666A JP2015535666A JP6093446B2 JP 6093446 B2 JP6093446 B2 JP 6093446B2 JP 2015535666 A JP2015535666 A JP 2015535666A JP 2015535666 A JP2015535666 A JP 2015535666A JP 6093446 B2 JP6093446 B2 JP 6093446B2
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Prior art keywords
pretreatment
substrate
cleaning
gas
ozone
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Japanese (ja)
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JP2015537372A5 (https=
JP2015537372A (ja
Inventor
ブラウン，イアン，ジェイ
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Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
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Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
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Publication of JP2015537372A5 publication Critical patent/JP2015537372A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2015535666A 2012-10-05 2013-09-13 基板を清浄化するためのプロセスガスの生成 Active JP6093446B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261710657P 2012-10-05 2012-10-05
US61/710,657 2012-10-05
US13/783,382 2013-03-03
US13/783,382 US9966280B2 (en) 2012-10-05 2013-03-03 Process gas generation for cleaning of substrates
PCT/US2013/059601 WO2014055218A1 (en) 2012-10-05 2013-09-13 Process gas generation for cleaning of substrates

Publications (3)

Publication Number Publication Date
JP2015537372A JP2015537372A (ja) 2015-12-24
JP2015537372A5 JP2015537372A5 (https=) 2016-12-22
JP6093446B2 true JP6093446B2 (ja) 2017-03-08

Family

ID=50431767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015535666A Active JP6093446B2 (ja) 2012-10-05 2013-09-13 基板を清浄化するためのプロセスガスの生成

Country Status (6)

Country Link
US (1) US9966280B2 (https=)
JP (1) JP6093446B2 (https=)
KR (1) KR101774122B1 (https=)
CN (2) CN104903014A (https=)
TW (1) TWI647756B (https=)
WO (1) WO2014055218A1 (https=)

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US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
JP6832108B2 (ja) * 2016-09-28 2021-02-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6770887B2 (ja) * 2016-12-28 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
CN109092801B (zh) * 2017-06-20 2022-03-18 蓝思科技（长沙）有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
US11027319B2 (en) * 2018-03-31 2021-06-08 Sensor Electronic Technology, Inc. Illumination using multiple light sources
JP7525338B2 (ja) * 2020-08-31 2024-07-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7567960B2 (ja) * 2023-03-14 2024-10-16 株式会社明電舎 基板の洗浄装置，基板の洗浄方法，半導体装置の製造方法
US20260003291A1 (en) * 2024-06-28 2026-01-01 Kla Corporation Duv led array for an ultraviolet-ozone cleaning system

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US6391117B2 (en) * 1992-02-07 2002-05-21 Canon Kabushiki Kaisha Method of washing substrate with UV radiation and ultrasonic cleaning
JP2727481B2 (ja) * 1992-02-07 1998-03-11 キヤノン株式会社 液晶素子用ガラス基板の洗浄方法
US5709754A (en) 1995-12-29 1998-01-20 Micron Technology, Inc. Method and apparatus for removing photoresist using UV and ozone/oxygen mixture
US5803975A (en) 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
JP3167625B2 (ja) * 1996-07-29 2001-05-21 島田理化工業株式会社 基板のウェット洗浄方法
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JPH11323576A (ja) 1998-05-08 1999-11-26 Sumitomo Precision Prod Co Ltd ウエットエッチング方法
JP4088810B2 (ja) 1998-09-01 2008-05-21 リアライズ・アドバンストテクノロジ株式会社 基板洗浄装置及び基板洗浄方法
US6143477A (en) * 1998-09-08 2000-11-07 Amtech Systems, Inc. Dual wavelength UV lamp reactor and method for cleaning/ashing semiconductor wafers
JP2001118818A (ja) 1999-08-12 2001-04-27 Uct Kk 紫外線処理装置及び紫外線処理方法
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US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
TWI291721B (en) 2002-06-23 2007-12-21 Asml Us Inc Method and system for atomic layer removal and atomic layer exchange
US6715498B1 (en) * 2002-09-06 2004-04-06 Novellus Systems, Inc. Method and apparatus for radiation enhanced supercritical fluid processing
JP2005129733A (ja) 2003-10-23 2005-05-19 Sumitomo Precision Prod Co Ltd 表面改質方法及び表面改質装置
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Also Published As

Publication number Publication date
US9966280B2 (en) 2018-05-08
TWI647756B (zh) 2019-01-11
WO2014055218A1 (en) 2014-04-10
KR101774122B1 (ko) 2017-09-12
CN104903014A (zh) 2015-09-09
JP2015537372A (ja) 2015-12-24
TW201428846A (zh) 2014-07-16
KR20150079680A (ko) 2015-07-08
CN110071035A (zh) 2019-07-30
US20140096792A1 (en) 2014-04-10

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