CN104903014A - 用于清洗基板的工艺气体的产生 - Google Patents

用于清洗基板的工艺气体的产生 Download PDF

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Publication number
CN104903014A
CN104903014A CN201380063928.8A CN201380063928A CN104903014A CN 104903014 A CN104903014 A CN 104903014A CN 201380063928 A CN201380063928 A CN 201380063928A CN 104903014 A CN104903014 A CN 104903014A
Authority
CN
China
Prior art keywords
substrate
pretreatment
cleaning
ozone
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380063928.8A
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English (en)
Chinese (zh)
Inventor
伊安·J·布朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN201910122153.6A priority Critical patent/CN110071035A/zh
Publication of CN104903014A publication Critical patent/CN104903014A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201380063928.8A 2012-10-05 2013-09-13 用于清洗基板的工艺气体的产生 Pending CN104903014A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910122153.6A CN110071035A (zh) 2012-10-05 2013-09-13 用于在清洗系统中清洗基板的方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261710657P 2012-10-05 2012-10-05
US61/710,657 2012-10-05
US13/783,382 2013-03-03
US13/783,382 US9966280B2 (en) 2012-10-05 2013-03-03 Process gas generation for cleaning of substrates
PCT/US2013/059601 WO2014055218A1 (en) 2012-10-05 2013-09-13 Process gas generation for cleaning of substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910122153.6A Division CN110071035A (zh) 2012-10-05 2013-09-13 用于在清洗系统中清洗基板的方法

Publications (1)

Publication Number Publication Date
CN104903014A true CN104903014A (zh) 2015-09-09

Family

ID=50431767

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380063928.8A Pending CN104903014A (zh) 2012-10-05 2013-09-13 用于清洗基板的工艺气体的产生
CN201910122153.6A Pending CN110071035A (zh) 2012-10-05 2013-09-13 用于在清洗系统中清洗基板的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910122153.6A Pending CN110071035A (zh) 2012-10-05 2013-09-13 用于在清洗系统中清洗基板的方法

Country Status (6)

Country Link
US (1) US9966280B2 (https=)
JP (1) JP6093446B2 (https=)
KR (1) KR101774122B1 (https=)
CN (2) CN104903014A (https=)
TW (1) TWI647756B (https=)
WO (1) WO2014055218A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109092801A (zh) * 2017-06-20 2018-12-28 蓝思科技（长沙）有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
CN121002622A (zh) * 2023-03-14 2025-11-21 株式会社明电舍 基板的清洗装置、基板的清洗方法及半导体装置的制造方法

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US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
JP6832108B2 (ja) * 2016-09-28 2021-02-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6770887B2 (ja) * 2016-12-28 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
US11027319B2 (en) * 2018-03-31 2021-06-08 Sensor Electronic Technology, Inc. Illumination using multiple light sources
JP7525338B2 (ja) * 2020-08-31 2024-07-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US20260003291A1 (en) * 2024-06-28 2026-01-01 Kla Corporation Duv led array for an ultraviolet-ozone cleaning system

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CN1294481A (zh) * 1996-03-01 2001-05-09 佳能株式会社 微波等离子体处理装置及其处理方法
US20010017142A1 (en) * 1992-02-07 2001-08-30 Masaaki Suzuki Method of washing substrate with UV radiation and ultrasonic cleaning
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TW200832495A (en) * 2007-01-19 2008-08-01 Kismart Corp Light module
US20080268214A1 (en) * 2007-04-30 2008-10-30 Richard Allen Hayes Decorative safety glass
US7837821B2 (en) * 2004-10-13 2010-11-23 Rheonix, Inc. Laminated microfluidic structures and method for making

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JP2727481B2 (ja) * 1992-02-07 1998-03-11 キヤノン株式会社 液晶素子用ガラス基板の洗浄方法
US5709754A (en) 1995-12-29 1998-01-20 Micron Technology, Inc. Method and apparatus for removing photoresist using UV and ozone/oxygen mixture
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JPH1048586A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
JPH11323576A (ja) 1998-05-08 1999-11-26 Sumitomo Precision Prod Co Ltd ウエットエッチング方法
JP4088810B2 (ja) 1998-09-01 2008-05-21 リアライズ・アドバンストテクノロジ株式会社 基板洗浄装置及び基板洗浄方法
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US8492736B2 (en) * 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
US8772170B2 (en) 2010-09-01 2014-07-08 Arizona Board Of Regents On Behalf Of The University Of Arizona Enhanced stripping of implanted resists
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
JP5481366B2 (ja) 2010-12-22 2014-04-23 東京エレクトロン株式会社 液処理方法および液処理装置
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US20010017142A1 (en) * 1992-02-07 2001-08-30 Masaaki Suzuki Method of washing substrate with UV radiation and ultrasonic cleaning
CN1294481A (zh) * 1996-03-01 2001-05-09 佳能株式会社 微波等离子体处理装置及其处理方法
WO2004001808A2 (en) * 2002-06-23 2003-12-31 Aviza Technology, Inc. Method and system for atomic layer removal and atomic layer exchange
US6715498B1 (en) * 2002-09-06 2004-04-06 Novellus Systems, Inc. Method and apparatus for radiation enhanced supercritical fluid processing
US7837821B2 (en) * 2004-10-13 2010-11-23 Rheonix, Inc. Laminated microfluidic structures and method for making
TW200832495A (en) * 2007-01-19 2008-08-01 Kismart Corp Light module
US20080268214A1 (en) * 2007-04-30 2008-10-30 Richard Allen Hayes Decorative safety glass

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109092801A (zh) * 2017-06-20 2018-12-28 蓝思科技（长沙）有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
CN109092801B (zh) * 2017-06-20 2022-03-18 蓝思科技（长沙）有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
CN121002622A (zh) * 2023-03-14 2025-11-21 株式会社明电舍 基板的清洗装置、基板的清洗方法及半导体装置的制造方法

Also Published As

Publication number Publication date
US9966280B2 (en) 2018-05-08
TWI647756B (zh) 2019-01-11
WO2014055218A1 (en) 2014-04-10
KR101774122B1 (ko) 2017-09-12
JP2015537372A (ja) 2015-12-24
TW201428846A (zh) 2014-07-16
KR20150079680A (ko) 2015-07-08
JP6093446B2 (ja) 2017-03-08
CN110071035A (zh) 2019-07-30
US20140096792A1 (en) 2014-04-10

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Application publication date: 20150909