JP6091206B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP6091206B2
JP6091206B2 JP2012279843A JP2012279843A JP6091206B2 JP 6091206 B2 JP6091206 B2 JP 6091206B2 JP 2012279843 A JP2012279843 A JP 2012279843A JP 2012279843 A JP2012279843 A JP 2012279843A JP 6091206 B2 JP6091206 B2 JP 6091206B2
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Japan
Prior art keywords
insulating film
film
region
main surface
semiconductor device
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JP2012279843A
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English (en)
Japanese (ja)
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JP2014123671A5 (enExample
JP2014123671A (ja
Inventor
船矢　琢央
琢央 船矢
宏美 鴫原
宏美 鴫原
久雄 鴫原
久雄 鴫原
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2012279843A priority Critical patent/JP6091206B2/ja
Priority to US14/106,569 priority patent/US8987861B2/en
Priority to CN201310712188.8A priority patent/CN103887287B/zh
Publication of JP2014123671A publication Critical patent/JP2014123671A/ja
Priority to HK14111822.5A priority patent/HK1198303A1/xx
Priority to US14/625,390 priority patent/US9219108B2/en
Publication of JP2014123671A5 publication Critical patent/JP2014123671A5/ja
Priority to US14/961,622 priority patent/US9818815B2/en
Application granted granted Critical
Publication of JP6091206B2 publication Critical patent/JP6091206B2/ja
Priority to US15/799,772 priority patent/US10157974B2/en
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10W20/497—
    • H10W72/019—
    • H10W90/811—
    • H10W72/07553—
    • H10W72/537—
    • H10W72/5445—
    • H10W72/5449—
    • H10W72/5473—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/932—
    • H10W72/944—
    • H10W72/983—
    • H10W74/00—
    • H10W90/753—

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Coils Or Transformers For Communication (AREA)
JP2012279843A 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法 Active JP6091206B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012279843A JP6091206B2 (ja) 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法
US14/106,569 US8987861B2 (en) 2012-12-21 2013-12-13 Semiconductor device and method of manufacturing the same
CN201310712188.8A CN103887287B (zh) 2012-12-21 2013-12-20 半导体装置和半导体装置的制造方法
HK14111822.5A HK1198303A1 (en) 2012-12-21 2014-11-21 Semiconductor device and method of manufacturing the same
US14/625,390 US9219108B2 (en) 2012-12-21 2015-02-18 Semiconductor device and method of manufacturing the same
US14/961,622 US9818815B2 (en) 2012-12-21 2015-12-07 Semiconductor device and method of manufacturing the same
US15/799,772 US10157974B2 (en) 2012-12-21 2017-10-31 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012279843A JP6091206B2 (ja) 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017020522A Division JP6360926B2 (ja) 2017-02-07 2017-02-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2014123671A JP2014123671A (ja) 2014-07-03
JP2014123671A5 JP2014123671A5 (enExample) 2015-09-03
JP6091206B2 true JP6091206B2 (ja) 2017-03-08

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JP2012279843A Active JP6091206B2 (ja) 2012-12-21 2012-12-21 半導体装置および半導体装置の製造方法

Country Status (4)

Country Link
US (4) US8987861B2 (enExample)
JP (1) JP6091206B2 (enExample)
CN (1) CN103887287B (enExample)
HK (1) HK1198303A1 (enExample)

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US9929038B2 (en) 2013-03-07 2018-03-27 Analog Devices Global Insulating structure, a method of forming an insulating structure, and a chip scale isolator including such an insulating structure
CN108807208B (zh) * 2013-03-25 2023-06-23 瑞萨电子株式会社 半导体装置
JP6395304B2 (ja) * 2013-11-13 2018-09-26 ローム株式会社 半導体装置および半導体モジュール
CN104810244B (zh) * 2014-01-26 2018-12-18 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法、半导体器件和电子装置
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US10236265B2 (en) * 2014-07-28 2019-03-19 Infineon Technologies Ag Semiconductor chip and method for forming a chip pad
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CN105789108B (zh) * 2014-12-16 2019-02-12 中芯国际集成电路制造(上海)有限公司 功率晶体管芯片的制作方法及功率晶体管芯片
JP6589277B2 (ja) * 2015-01-14 2019-10-16 富士電機株式会社 高耐圧受動素子および高耐圧受動素子の製造方法
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JP2017045864A (ja) * 2015-08-26 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN108140576A (zh) * 2015-10-01 2018-06-08 瑞萨电子株式会社 半导体器件及其制造方法
US9941565B2 (en) 2015-10-23 2018-04-10 Analog Devices Global Isolator and method of forming an isolator
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JP2018182223A (ja) * 2017-04-20 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6819564B2 (ja) * 2017-12-19 2021-01-27 三菱電機株式会社 半導体装置およびその製造方法
DE102019122844B4 (de) 2018-08-29 2024-07-25 Analog Devices International Unlimited Company Back-to-Back-Isolationsschaltung
CN109326571B (zh) * 2018-09-26 2020-12-29 矽力杰半导体技术(杭州)有限公司 芯片封装组件及其制造方法
JP2020088200A (ja) * 2018-11-27 2020-06-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11450469B2 (en) 2019-08-28 2022-09-20 Analog Devices Global Unlimited Company Insulation jacket for top coil of an isolated transformer
US11716117B2 (en) * 2020-02-14 2023-08-01 Texas Instruments Incorporated Circuit support structure with integrated isolation circuitry
JP7332775B2 (ja) * 2020-03-19 2023-08-23 株式会社東芝 アイソレータ
JP7284121B2 (ja) * 2020-03-23 2023-05-30 株式会社東芝 アイソレータ
JP2021174955A (ja) * 2020-04-30 2021-11-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20230411281A1 (en) * 2020-09-23 2023-12-21 Rohm Co., Ltd. Semiconductor device, semiconductor module, motor drive device, and vehicle
JP7535953B2 (ja) * 2021-01-13 2024-08-19 三菱電機株式会社 トランス装置および半導体装置
CN113035507B (zh) * 2021-04-22 2025-09-30 全球能源互联网研究院有限公司 一种用于直流gis的电压互感器
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Also Published As

Publication number Publication date
HK1198303A1 (en) 2015-03-27
CN103887287B (zh) 2019-04-09
US20180069073A1 (en) 2018-03-08
US20150162395A1 (en) 2015-06-11
US8987861B2 (en) 2015-03-24
CN103887287A (zh) 2014-06-25
US9818815B2 (en) 2017-11-14
JP2014123671A (ja) 2014-07-03
US9219108B2 (en) 2015-12-22
US10157974B2 (en) 2018-12-18
US20140175602A1 (en) 2014-06-26
US20160087025A1 (en) 2016-03-24

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